Byung-Gook Park

70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method

70 nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells with an ultra-thin oxide-nitride-oxide (ONO) film on an silicon-on-insulator (SOI) wafer are fabricated. If we consider the program/erase threshold voltage window as 2 V, the program time is approximately 1 ms at an 8 V program voltage and the erase time is about 200 us at a -6 V erase voltage using FN write and the 2-sided hot hole injection method. It is observed that the 2-sided hot hole injection can completely erase the electrons in the ONO thin film on a 70 nm channel. The memory window is almost constant after 100,000 cycles, and the retention characteristics show that the threshold voltage after 106 s is predicted as 0.75 V by extrapolation.

Comparison of Low Frequency Noise Characteristics between Channel and Gate‐Induced Drain Leakage Currents in nMOSFETs

Low frequency noise including 1/f noise and random telegraph noise (RTN) in gate‐induced drain leakage (GIDL) current were fully characterized, and compared with those of channel current in MOSFETs. The GIDL current of sub‐100 nm MOSFETs showed lower noise amplitude by ∼10 times or beyond than channel current at the same current level.

Vertically Stackable Novel One‐Time Programmable Nonvolatile Memory Devices Based on Dielectric Breakdown Mechanism

In this paper, a novel one‐time programmable (OTP) nonvolatile memory (NVM) device and its array structures based on silicon technology are proposed. There have been many features of OTP NVM devices utilizing various combinations of channel, breakdown region, barrier, and contact materials. However, this invention can be realized by simple materials and fabrication methods: it is silicon‐based materials and fully compatible with the conventional CMOS process. An individual memory cell is a silicon diode vertically integrated. Historically, OTP memories were widely used for read‐only‐memory (ROM) in the central processing unit (CPU) of the computer systems. By implanting the nanoscale fabrication technology into the concept of OTP memory, innovative high‐density NVM appliances for massive storage media becomes very promising. The program operation is performed by breaking down the thin oxide layer between pn doped structure and wordline (WL) and its state can be sensed by the leakage current through the br...