Byung-Gu Jeon

High Mobility in a Stable Transparent Perovskite Oxide

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm2 V-1 s-1 at a doping level of 8×1019 cm-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm2 V-1 s-1 at a doping level of 4.4×1020 cm-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 °C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices.

Physical properties of transparent perovskite oxides (Ba,La)SnO3with high electrical mobility at room temperature

Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications. BaSnO3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibits unusually high electrical mobility of 320 cm^2(Vs)^-1 at room temperature and superior thermal stability at high temperatures [H. J. Kim et al. Appl. Phys. Express. 5, 061102 (2012)]. Following that work, we report various physical properties of (Ba,La)SnO3 single crystals and films including temperature-dependent transport and phonon properties, optical properties and first-principles calculations. We find that almost doping-independent mobility of 200-300 cm^2(Vs)^-1 is realized in the single crystals in a broad doping range from 1.0x10^19 to 4.0x10^20 cm^-3. Moreover, the conductivity of ~10^4 ohm^-1cm^-1 reached at the latter carrier density is comparable to the highest value. We attribute the high mobility to several physical properties of (Ba,La)SnO3: a small effective mass coming from the ideal Sn-O-Sn bonding, small disorder effects due to the doping away from the SnO2 conduction channel, and reduced carrier scattering due to the high dielectric constant. The observation of a reduced mobility of ~70 cm^2(Vs)^-1 in the film is mainly attributed to additional carrier-scatterings which are presumably created by the lattice mismatch between the substrate SrTiO3 and (Ba,La)SnO3. The main optical gap of (Ba,La)SnO3 single crystals remained at about 3.33 eV and the in-gap states only slightly increased, thus maintaining optical transparency in the visible region. Based on these, we suggest that the doped BaSnO3 system holds great potential for realizing all perovskite-based, transparent high-frequency high-power functional devices as well as highly mobile two-dimensional electron gas via interface control of heterostructured films.

Concurrent transition of ferroelectric and magnetic ordering near room temperature

Strong spin-lattice coupling in condensed matter gives rise to intriguing physical phenomena such as colossal magnetoresistance and giant magnetoelectric effects. The phenomenological hallmark of such a strong spin-lattice coupling is the manifestation of a large anomaly in the crystal structure at the magnetic transition temperature. Here we report that the magnetic Néel temperature of the multiferroic compound BiFeO(3) is suppressed to around room temperature by heteroepitaxial misfit strain. Remarkably, the ferroelectric state undergoes a first-order transition to another ferroelectric state simultaneously with the magnetic transition temperature. Our findings provide a unique example of a concurrent magnetic and ferroelectric transition at the same temperature among proper ferroelectrics, taking a step toward room temperature magnetoelectric applications.

Electrical control of large magnetization reversal in a helimagnet

Reversal of magnetization M by an electrical field E has been a long-sought phenomenon in materials science because of its potential for applications such as memory devices. However, the phenomenon has rarely been achieved and remains a considerable challenge. Here we report the large M reversal by E in a multiferroic Ba0.5Sr1.5Zn2(Fe0.92Al0.08)12O22 crystal without any external magnetic field. Upon sweeping E through the range of ±2 MV m(-1), M varied quasi-linearly in the range of ±2 μB per f.u., resulting in the M reversal. Strong electrical modulation of M at zero magnetic field were observable up to ~\n150 K. Nuclear magnetic resonance measurements provided microscopic evidence that the electric field and the magnetic field play equivalent roles in modulating the volume of magnetic domains. Our results suggest that the soft ferrimagnetism and the associated transverse conical state are key ingredients to achieve the large magnetization reversal at fairly high temperatures.

Enhancement of resonant and non-resonant magnetoelectric coupling in multiferroic laminates with anisotropic piezoelectric properties

Giant transverse magnetoelectric voltage coefficients |αE| = 751 and 305 V/cmOe at two electromechanical antiresonance frequencies are found in the symmetric metglas/[011]-oriented 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 crystal/metglas laminate. Unique torsional and diagonal vibration modes are identified to be responsible for those giant |αE| values. Moreover, αE is found to be anisotropic depending on the in-plane magnetic field directions, making the piezoelectrics with anisotropic planar piezoelectricity potentially useful base materials for multi-frequency, phase-sensitive magnetoelectric devices.

Observation of multiferroic properties in pyroxene NaFeGe2O6

We report the observation of multiferroicity in a clinopyroxene NaFeGe(2)O(6) polycrystal from the investigation of its electrical and magnetic properties. Following the previously known first magnetic transition at T(N1) = 13 K, a second magnetic transition appears at T(N2) = 11.8 K in the temperature dependence of the magnetization. A ferroelectric polarization starts to develop clearly at T(N2) rather than T(N1) and its magnitude increases up to ~13 μC m(-2) at 5 K, supporting the idea that the ferroelectric state in NaFeGe(2)O(6) stems from a helical spin order stabilized below T(N2). When a magnetic field of 90 kOe is applied, the electric polarization decreases to 9 μC m(-2) and T(N2) slightly increases by 0.5 K. At intermediate magnetic fields, around 28 and 78 kOe, anomalies in the magnetoelectric current, magnetoelectric susceptibility, and field derivative of magnetization curves are found, indicating field-induced spin-state transitions. Based on these electrical and magnetic properties, we provide a detailed low temperature phase diagram up to 90 kOe, and discuss the nature of each phase of NaFeGe(2)O(6).

The electronic structure of epitaxially stabilized 5d perovskite Ca1 − xSrxIrO3 (x = 0, 0.5, and 1) thin films: the role of strong spin–orbit coupling

We have investigated the electronic structure of meta-stable perovskite Ca(1 - x)Sr(x)IrO(3)(x = 0, 0.5, and 1) thin films using transport measurements, optical spectroscopy, and first-principles calculations. We artificially fabricated the perovskite phase of Ca(1 - x)Sr(x)IrO(3), which has a hexagonal or post-perovskite crystal structure in bulk form, by growing epitaxial thin films on perovskite GdScO(3) substrates using an epi-stabilization technique. The transport properties of the perovskite Ca(1 - x)Sr(x)IrO(3) films systematically change from nearly insulating (or semi-metallic) for x = 0 to weakly metallic for x = 1. Due to the extended wavefunctions, 5d electrons are usually delocalized. However, the strong spin-orbit coupling in Ca(1 - x)Sr(x)IrO(3) results in the formation of effective total angular momentum J(eff) = 1/2 and 3/2 states, which puts Ca(1 - x)Sr(x)IrO(3) in the vicinity of a metal-insulator phase boundary. As a result, the electrical properties of the Ca(1 - x)Sr(x)IrO(3) films are found to be sensitive to x and strain.

Polarity-dependent kinetics of ferroelectric switching in epitaxial BiFeO3(111) capacitors

We report on the intriguing polarity-dependent kinetics of polarization switching in epitaxial BiFeO3(111) capacitors. Two seemingly incompatible switching kinetics were observed depending on the polarity of the applied switching bias. Under a negative switching bias, the polarization switching process occurs mainly through sideways domain wall motion, but under a positive switching bias, domain nucleation governs the polarization reversal. The modified piezoresponse force microscopy reveals these polarity-dependent ferroelectric domain evolutions. This polarity dependence of ferroelectric switching kinetics is attributed to defect-related local fields that have different distributions near film/electrode interfaces, probably due to structural relaxation in the BiFeO3(111) film.

Electronic structure of double perovskite A2FeReO6 (A = Ba and Ca): interplay between spin–orbit interaction, electron correlation, and lattice distortion

We have investigated the electronic structure of double perovskites, Ba(2)FeReO(6) (metallic) and Ca(2)FeReO(6) (insulating) using optical and x-ray absorption spectroscopy. By comparing the experimental results with the density functional theory calculations, we found that the electronic structure of Ba(2)FeReO(6) could be determined from the interaction of the electron correlation and spin-orbit coupling. On the other hand, for Ca(2)FeReO(6), the lattice distortion and electron correlation are important in determining the electronic structure. Additionally, the insulating gap in Ca(2)FeReO(6) is realized by the spin-orbit coupling. Our work shows that the subtle interplay of the spin-orbit interaction, electron correlation, and lattice distortion should be taken into account to understand the electronic structure of the 5d transition metal oxides.

Quantitative Measurements of Size-Dependent Magnetoelectric Coupling in Fe3O4 Nanoparticles

Bulk magnetite (Fe3O4), the loadstone used in magnetic compasses, has been known to exhibit magnetoelectric (ME) properties below ∼10 K; however, corresponding ME effects in Fe3O4 nanoparticles have been enigmatic. We investigate quantitatively the ME coupling of spherical Fe3O4 nanoparticles with uniform diameters (d) from 3 to 15 nm embedded in an insulating host, using a sensitive ME susceptometer. The intrinsic ME susceptibility (MES) of the Fe3O4 nanoparticles is measured, exhibiting a maximum value of ∼0.6 ps/m at 5 K for d = 15 nm. We found that the MES is reduced with reduced d but remains finite until d = ∼5 nm, which is close to the critical thickness for observing the Verwey transition. Moreover, with reduced diameter the critical temperature below which the MES becomes conspicuous increased systematically from 9.8 K in the bulk to 19.7 K in the nanoparticles with d = 7 nm, reflecting the core-shell effect on the ME properties. These results point to a new pathway for investigating ME effect in various nanomaterials.