Byungchil Kim
Georgia Institute of Technology
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Featured researches published by Byungchil Kim.
Optics Express | 2014
Nianqiang Li; Byungchil Kim; V. N. Chizhevsky; Alexandre Locquet; Matthieu R. Bloch; D. S. Citrin; Wei Pan
This paper reports the experimental investigation of two different approaches to random bit generation based on the chaotic dynamics of a semiconductor laser with optical feedback. By computing high-order finite differences of the chaotic laser intensity time series, we obtain time series with symmetric statistical distributions that are more conducive to ultrafast random bit generation. The first approach is guided by information-theoretic considerations and could potentially reach random bit generation rates as high as 160 Gb/s by extracting 4 bits per sample. The second approach is based on pragmatic considerations and could lead to rates of 2.2 Tb/s by extracting 55 bits per sample. The randomness of the bit sequences obtained from the two approaches is tested against three standard randomness tests (ENT, Diehard, and NIST tests), as well as by calculating the statistical bias and the serial correlation coefficients on longer sequences of random bits than those used in the standard tests.
Optics Express | 2014
Byungchil Kim; Nianqiang Li; Alexandre Locquet; D. S. Citrin
This Letter is the first to report experimental bifurcation diagrams of an external-cavity semiconductor laser (ECSL) in the low-to-moderate current injection regime and long-cavity case. Based on the bifurcation cascade behavior which was unveiled by Hohl and Gavrielides [Phys. Rev. Lett. 82, 1148-1151 (1999)], we present a detailed experimental investigation of the nonlinear dynamics of ECSLs and of the robustness of the cascade to changes in the current and cavity length. Also, we report for the first time a well resolved experimental Hopf bifurcation in an ECSL. Based on the Lang and Kobayashi model, we identify the dynamical regimes and the instabilities involved in the cascade, as well as the influence of the current and cavity length on the cascade.
Optics Letters | 2014
Nianqiang Li; Byungchil Kim; Alexandre Locquet; Daeyoung Choi; Wei Pan; D. S. Citrin
We study experimentally and theoretically the first- and second-order statistics of the optical intensity of a chaotic external-cavity semiconductor DFB laser in fully developed coherence-collapse. The second-order statistic is characterized by the autocorrelation, where we achieve consistent experimental and theoretical results over the entire parameter range considered. For the first-order statistic, we find that the experimental probability-density function is significantly more concentrated around the mean optical power and robust to parameter changes than theory predicts.
Optics Letters | 2014
A. A. Sahai; Byungchil Kim; Daeyoung Choi; Alexandre Locquet; D. S. Citrin
We show that the bifurcations between dynamical states originating in the nonlinear dynamics of an external-cavity semiconductor laser at constant current can be detected by its terminal voltage V. We experimentally vary the intensity fed back into the gain medium by the external cavity and show that the dc component V(dc) of V tracks the optical intensity-based bifurcation diagram. It is shown using computational results based upon the Lang-Kobayashi model that whereas optical intensity accesses the dynamical-state variable |E|, V is related to population-inversion carrier density N. The change in feedback strength affects N and thereby the quasi-Fermi energy level difference at the p-i-n junction band-gap of the gain medium. The change in the quasi-Fermi energy-level thereby changes the terminal voltage V. Thus V is shown to provide information on the change in the dynamical-state variable N, which complements the more conventionally probed optical intensity.
IEEE Journal of Quantum Electronics | 2015
Nianqiang Li; Luciano Zunino; Alexandre Locquet; Byungchil Kim; Daeyoung Choi; Wei Pan; D. S. Citrin
We study experimentally and theoretically the permutation entropy (PE) of the optical intensity I(t) of an external-cavity semiconductor distributed feedback laser in the coherence collapse regime. Our PE analysis allows us to uncover the intrinsic dynamical complexity at multiple timescales of the delayed-feedback system, as well as to investigate how the experimental observations can be determined by modeling. An overall good agreement between experiment and theory corroborates the effectiveness of the Lang-Kobayashi model, though the model underestimates the entropy on the timescale of the relaxation oscillations and can lead to a time-delay signature that is less evident than in experiment, indicating a potential vulnerability of chaos encryption. This provides a critical test of the standard theoretical framework in which chaotic external-cavity semiconductor lasers are understood.
IEEE Journal of Quantum Electronics | 2014
Byungchil Kim; Alexandre Locquet; Nianqiang Li; Daeyoung Choi; D. S. Citrin
We report detailed experimental bifurcation diagrams of an external-cavity semiconductor laser. We have focused on the case of a DFB laser biased up to 1.6 times the threshold current and subjected to feedback from a distant reflector. We observe bifurcation cascades resulting from the destabilization of external-cavity modes that appear successively when the feedback is increased, and explain, in light of the Lang and Kobayashi (LK) model, how the cascading is influenced by various laser operating parameters (current, delay, and feedback phase) and experimental conditions. The semiquantitative agreement between experiments and simulations validates over a large range of operating parameters, the LK model as a tool for reproducing the salient aspects of the dynamics of a DFB laser subjected to external optical feedback.
Proceedings of SPIE | 2014
Nianqiang Li; Byungchil Kim; Daeyoung Choi; V. N. Chizhevsky; Alexandre Locquet; Matthieu R. Bloch; D. S. Citrin; Wei Pan
Random bit generation (RBG) with chaotic semiconductor lasers has been extensively studied because of its potential applications in secure communications and high-speed numerical simulations. Researchers in this field have mainly focused on the improvement of the generation rate and the compactness of the random bit generators. In this paper, we experimentally demonstrate the existence of two regimes of fast RBG using a single chaotic laser subjected to delayed optical feedback: the first one is based on the extraction of all min-entropy contained in each random sample, and the second one is to demonstrate a possibility of increasing the generation rate by extracting 55 bits from each variable.
Composites Part B-engineering | 2015
Junliang Dong; Byungchil Kim; Alexandre Locquet; Peter McKeon; Nico F. Declercq; D. S. Citrin
Physical Review A | 2015
Byungchil Kim; Alexandre Locquet; Daeyoung Choi; D. S. Citrin
Physical Review A | 2017
Alexandre Locquet; Byungchil Kim; Daeyoung Choi; Nianqiang Li; D. S. Citrin