C. Dachs

SEU critical charge and sensitive area in a submicron CMOS technology

This work presents SEU phenomena in advanced SRAM memory cells. Using mixed-mode simulation, the effects of scaling on the notions of sensitive area and critical charge is shown. Specifically, we quantify the influence of parasitic bipolar action in cells fabricated in a submicron technology.

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

Triggering of Single Event Burnout (SEB) in Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is studied by means of experiments and simulations based on real structures. Conditions for destructive and nondestructive events are investigated through current duration observations. The effect of the ions impact position is experimentally pointed out. Finally, further investigation with 2D MEDICI simulations show that the different regions of the MOSFET cell indeed exhibit different sensitivity with respect to burnout triggering. >

Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

The use of the 2D simulator MEDICI as a tool for single event burnout (SEB) comprehension is investigated. Simulation results are compared to experimental currents induced in an N channel power MOSFET by the ions from a /sup 252/Cf source. Current measurements have been carried out using a specially designed circuit. Simulations make it possible to analyze separately the effects of the ion impact and the electrical environment parameters on the SEB phenomenon. Burnout sensitivity is found to be increased by increasing supply voltage and ion linear energy transfer (LET), and by decreasing load charge. These electrical tendencies are confirmed by experiments. Burnout sensitivity is also found to be sensitive to the ion impact position. The current shape variations for given electrical parameters can be related to LET or ion impact position changes. However, some experimental current shapes are not reproduced by simulations. >

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p/sup +/ plug modification approach for SEE hardening of power MOSFETs is validated with simulations on actual device structures.

Heavy ion induced failures in a power IGBT

Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device.

Use of 2D simulations to study parameters influence on SEB occurrence in n-channel MOSFETs

Heavy-ion-induced effects on a power MOSFET cell are simulated with the 2D software MEDICI. The effect on single event burnout (SEB) sensitivity of several parameters (impact position, incidence angle, V/sub DS/ bias voltage, LET of the incident particle, etc...) is analyzed.<<ETX>>

SEB occurrence in a VIP: Influence of the epi-substrate junction

Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence.

Static characteristic and transient behavior of a N+PNN+ transistor irradiated with flash-X ray

Abstract This work concerns a parasitic N+PNN+ transistor appearing in a power MOSFET. 2D Medici simulations point out a close correlation between the static characteristic and the transient values of both the current and the reverse bias of the transistor irradiated by a flash-X ray. The static characteristic points out a steady-state where the transistor behaves as a resistor. If the dose rate is sufficient, it can bring the transistor to the same steady-state. In both cases, this steady-state is reached after the same physical process: conduction of the emitter-base junction, shift of the electric field towards the NN+ junction and highly avalanching conditions in the device.

Evidence of the sensitivity inhomogeneity of power MOSFETs' cells to single event burnout

Results obtained under heavy ion irradiation of one cell or different areas of a power MOSFET are presented. The observed responses confirm that the burnout current evolution depends on the impact localisation with respect to the cell and show that the sensitivity to burnout is variable over the transistor surface.