C. Fortin

InP/GaInAsP phase-shifted Mach-Zehnder modulator for wavelength-independent (1530-1560 nm) performance in 10 Gbit/s transmission over dispersive fiber

Mach-Zehnder modulators are attractive components for high-bit-rate data transmission over standard dispersive fiber because they allow for the adjustment of the value and sign of the frequency chirp. Recently, it has been shown that the use of an InP/GaInAsP /spl pi/-phase-shifted Mach-Zehnder modulator driven in a push-pull configuration scheme led to negatively chirped signals with a propagation distance of about 120 km at 10 Gbit/s at a wavelength of 1560 nm. We investigate its use in the simple single-arm modulation scheme and perform the 10 Gbit/s transmission experiments at various wavelengths (1530-1560 nm) in order to check its compatibility as a modulator within a wavelength-division multiplexing (WDM) source. The vertical structure of the Mach-Zehnder modulator is composed of an undoped 20 multiple quantum well waveguide layer (GaInAsP/InP).

First optical packet switching demonstration with sixteen-channel InP monolithically integrated wavelength selector module

The first demonstration of optical packet switching with an InP monolithic 16-channel wavelength selector module is reported. Switching time below 5 ns, wide input power dynamic range of 15 dB, average polarisation dependent loss below 2 dB, and error free transmission are demonstrated.

High Performance 1.55 µm 4 Clamped Gain Semiconductor Optical Amplifier Array Module For Photonic Switching Applications

We report on the first Clamped Gain semiconductor optical amplifier array module. The optical gain and the output saturation power are respectively 13.2 ± 1dB and 10 dBm.

Integrated laser-waveguide structures using selective area intermixing

Photonic integrated circuits such as integrated laser-modulators require side by side planar areas with differential bandgap. Structures grown in single step epitaxy permit very efficient coupling between the different regions of the device. This has been demonstrated by selective area growth (SAG) using metalorganic vapor phase epitaxy for laser-modulator applications at 1.55 /spl mu/m. On the other hand, selective area intermixing (SAI) appears as a promising technique to control the differential wavelength between two regions. Such a technique provides maximum coupling efficiency (100%) between two sections of different band gap and leads to a reduction of the number of growth steps. In this paper, we report on the optical and electrical properties of InGaAsP/InP compressive strained multiple quantum well (MQW) laser-guide structures obtained by SAI under phosphorus over pressure in a vacuum sealed quartz ampoule. In this technique, the linear time dependence of the photoluminescence (PL) blue shift due to group V elements interdiffusion allow us to control the differential wavelength between dielectric capped and uncapped areas. The interdiffusion is strongly reduced in the dielectric capped areas and results in a low PL blue shift. Low threshold current densities are obtained in both areas even for a PL blue shift as large as 170 nm. In addition, optical intensity modulators based on the quantum confined stark effect (QCSE) exhibit high extinction ratio of -30 dB (/spl lambda/=1.55 /spl mu/m) with reverse driving voltage of about 1.2 V.<<ETX>>

Novel 1.55 /spl mu/m VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors

A novel 1.55-/spl mu/m surface-emitting laser structure based on a tunnel junction for current injection and GaAs-AlAs top mirror directly grown on InP cavity in a 2 in. compatible process allows cw operation at room temperature.

Fabrication of 1.55 /spl mu/m oxidized VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors

We present the fabrication of 1.55 /spl mu/m multi-quantum well vertical cavity surface emitting lasers (VCSEL) grown by gas source MBE on InP substrate. We use a combination of lattice-matched InP/InGaAsP and GaAs/GaAlAs metamorphic reflectors with high reflectivities. Room temperature operation in pulsed mode is achieved. We also demonstrate that selective wet oxidation of GaAlAs can be applied to metamorphic material.

Thermal behaviour of 1.3 /spl mu/m vertical cavity surface emitting laser

Room temperature, pulsed operation of 1.3 /spl mu/m InGaAsP/InP vertical cavity surface emitting lasers (VCSELs) has been demonstrated. Low threshold currents have been obtained with a non buried structure having dielectric mirrors on both the p and n sides. We discuss the laser results pointing out the importance of thermal properties. The thermal resistance is estimated for p- and n-down mounted lasers.

Proton bombardment technique for high speed (>1 Gbit/s) 4 section bistable DBR wavelength converter

Wavelength conversion is a key function for optical switching using wavelength routing. Among the different solutions (gain saturation in semi-conductor amplifiers or in DBR lasers) bistable lasers based on saturable absorption are attractive with their signal reshaping capability but they have been limited in speed by the carrier lifetime of the absorption section. To overcome this limitation, we have optimised a proton bombardment technique of the saturable absorber and applied it to the realisation of (4 section) high speed bistable DBR lasers. Wavelength conversion is thus demonstrated at 1 Gbit/s together with Extinction Ratio regeneration.<<ETX>>