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Dive into the research topics where Caroline Andersson is active.

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Featured researches published by Caroline Andersson.


Journal of Applied Physics | 2009

H plasma cleaning and a-Si passivation of GaAs for surface channel device applications

Chiara Marchiori; David J. Webb; C. Rossel; M. Richter; Marilyne Sousa; C. Gerl; R. Germann; Caroline Andersson; Jean Fompeyrine

We discuss GaAs(001) cleaning and surface passivation for metal-oxide-semiconductor capacitors and field effect transistors fabricated with HfO2 as high-κ gate oxide. An amorphous-Si passivating layer is deposited by molecular beam deposition on a 2×1 reconstructed GaAs surface cleaned using a remote rf H plasma. The H plasma effectively removes C contaminants from the surface, but a progressive Ga enrichment and the presence of Ga–O bonds are observed. The capacitance-voltage measurements on capacitors under peripheral illumination show inversion, which is an indication of a passivated interface. The Dit distribution as function of energy in the band gap is extracted by using the conductance technique at high and low temperatures and is reported for HfO2/a-Si gate stacks on H-cleaned GaAs. The observed Dit distribution is asymmetric. Values as low as 7×1011 eV−1 cm−1 are found in the upper half of the band gap. One clear peak at 0.7 eV and a tail at 0.2 eV above the valence band maximum, which can be par...


european solid state device research conference | 2008

Ge p-channel MOSFETS with La 2 O 3 and Al 2 O 3 gate dielectrics

C. Rossel; A. Dimoulas; A. Tapponnier; Daniele Caimi; David J. Webb; Caroline Andersson; Marilyne Sousa; Chiara Marchiori; Heinz Siegwart; Jean Fompeyrine; R. Germann

We report on p-MOSFETs based on La<sub>2</sub>O<sub>3</sub>, Al<sub>2</sub>O<sub>3</sub> and a mixture of both as high-k dielectric deposited by molecular beam epitaxy (MBE). Mobilities of about 140 cm<sup>2</sup>/Vs were achieved, which are 1.3 to 1.5 times larger than the universal hole mobility of Si/SiO<sub>2</sub>. This demonstrates the potential advantage of La<sub>2</sub>O<sub>3</sub>-based Ge p-MOSFETs over Si devices. The negative threshold voltages V<sub>T</sub>, which range between -0.2 and -1 V, make these gate stacks particularly attractive, given the fact that in several cases Ge p-MOSFETs exhibit an unwanted positive V<sub>T</sub> shift.


Journal of Applied Physics | 2011

Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium

Caroline Andersson; M. J. Süess; David J. Webb; Chiara Marchiori; Marilyne Sousa; Daniele Caimi; Heinz Siegwart; Jean Fompeyrine

Scaled layers of HfO2 on LaGeOx on Ge grown by molecular beam deposition and their electrical properties and passivation are discussed. The interfacial LaGeOx thickness as well as the deposition temperature of the HfO2 cap are varied and the effects thereof on properties like peak mobility and interface trap distributions are compared. We report on negative threshold voltages, around -0.8 V, in combination with scaled devices with a minimum EOT of 1.4 nm, which shows beneficial characteristics for the LaGeOx passivation of Ge. The effect of various post-metallization anneals in FG and O2 is shown to improve the gate stack properties of the scaled samples, yielding higher peak mobilities with maximum values of about 120 cm2/Vs for annealed samples. The impact of LaGeOx interfacial layer thickness and HfO2 deposition temperature on the density of interface traps (Dit) distributions for as-deposited and annealed samples is discussed, and Hf in-diffusion into the LaGeOx is shown to be detrimental to its passi...


european solid state device research conference | 2009

Impact of La 2 O 3 Thickness on HfO 2 /La 2 O 3 /Ge capacitors and p-channel MOSFETs

Caroline Andersson; Marilyne Sousa; Chiara Marchiori; David J. Webb; Daniele Caimi; Heinz Siegwart; Jean Fompeyrine; C. Rossel; Athanasios Dimoulas; Yerassimos Panayiotatos

In this study we report on HfO<inf>2</inf>/La<inf>2</inf>O<inf>3</inf>/Ge gate stacks grown by MBE with varying thicknesses of La<inf>2</inf>O<inf>3</inf> for MOS capacitors and pMOSFETs. Negative threshold voltages, around −0.8 V, in combination with scaled devices with an EOT of 1.4 nm shows good characteristics for the La<inf>2</inf>O<inf>3</inf> as a passivation for Ge. Also the effect of various post-metallization anneals in oxygen and forming gas is shown to improve the capacitors and MOSFETs, yielding mobility of 121 cm<sup>2</sup>/Vs.


Microelectronic Engineering | 2009

Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices

Caroline Andersson; C. Rossel; Marilyne Sousa; David J. Webb; Chiara Marchiori; Daniele Caimi; Heinz Siegwart; Y. Panayiotatos; A. Dimoulas; Jean Fompeyrine


214th ECS Meeting | 2008

Gate Dielectrics for High Mobility Semiconductors

Athanasios Dimoulas; Yerassimos Panayiotatos; Polychronis Tsipas; Sotiria Galata; Georgia Mavrou; Andreas Sotiropoulos; Chiara Marchiori; C. Rossel; David J. Webb; Caroline Andersson; Marilyne Sousa; M. Richter; Jean Fompeyrine


Archive | 2014

Halbleitereinheit mit Gate-Stapel und ein Verfahren zu deren Herstellung sowie die Verwendung einer Gate-Stapel-Struktur in einer Halbleitereinheit

Jean Fompeyrine; Chiara Marchiori; Caroline Andersson; David J. Webb


Archive | 2011

The semiconductor device with gate stack

Jean Fompeyrine; Chiara Marchiori; Caroline Andersson; David J. Webb


Archive | 2011

Halbleitereinheit mit Gate-Stapel Semiconductor device with gate stack

Jean Fompeyrine; Chiara Marchiori; Caroline Andersson; David J. Webb


Archive | 2011

Halbleitereinheit mit Gate-Stapel und ein Verfahren zu deren Herstellung sowie die Verwendung einer Gate-Stapel-Struktur in einer Halbleitereinheit Semiconductor device with gate stack and a method for their preparation and the use of a gate stack structure in a semiconductor device

Jean Fompeyrine; Chiara Marchiori; Caroline Andersson; David J. Webb

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