g-Ying Chen

Probing surface band bending of surface-engineered metal oxide nanowires.

We in situ probed the surface band bending (SBB) by ultraviolet photoelectron spectroscopy (UPS) in conjunction with field-effect transistor measurements on the incompletely depleted ZnO nanowires (NWs). The diameter range of the NWs is ca. 150-350 nm. Several surface treatments (i.e., heat treatments and Au nanoparticle (NP) decoration) were conducted to assess the impact of the oxygen adsorbates on the SBB. A 100 °C heat treatment leads to the decrease of the SBB to 0.74 ± 0.15 eV with 29.9 ± 3.0 nm width, which is attributed to the removal of most adsorbed oxygen molecules from the ZnO NW surfaces. The SBB of the oxygen-adsorbed ZnO NWs is measured to be 1.53 ± 0.15 eV with 43.2 ± 2.0 nm width. The attachment of Au NPs to the NW surface causes unusually high SBB (2.34 ± 0.15 eV with the wide width of 53.3 ± 1.6 nm) by creating open-circuit nano-Schottky junctions and catalytically enhancing the formation of the charge O(2) adsorbates. These surface-related phenomena should be generic to all metal oxide nanostructures. Our study is greatly beneficial for the NW-based device design of sensor and optoelectronic applications via surface engineering.

Photoconductive enhancement of single ZnO nanowire through localized Schottky effects

We demonstrated the Au nanoparticle (NP) decoration as an effective way to enhance both photocurrent and photoconductive gain of single ZnO nanowire (NW) photodetectors (PDs) through localized Schottky effects. The enhancement is caused by the enhanced space charge effect due to the existence of the localized Schottky junctions under open-circuit conditions at the NW surfaces, leading to a more pronounced electron-hole separation effect. Since the band-bending under illumination varies relatively small for an Au NP-decorated ZnO NW, the decay of gain is less prominent with increased excitation power, demonstrating the feasibility for a PD to maintain a high gain under high-power illumination.

Single-step deposition of high-mobility graphene at reduced temperatures

Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and room-temperature electrical mobility up to (6.0±1.0) × 10(4) cm(2) V(-1) s(-1), better than that of large, single-crystalline graphene derived from thermal CVD growth. These results indicate that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.

Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO3 nanowire/microwire.

We demonstrated a flexible strain sensor based on ZnSnO(3) nanowires/microwires for the first time. High-resolution transmission electron microscopy indicates that the ZnSnO(3) belongs to a rhombohedral structure with an R3c space group and is grown along the [001] axis. On the basis of our experimental observation and theoretical calculation, the characteristic I-V curves of ZnSnO(3) revealed that our strain sensors had ultrahigh sensitivity, which is attributed to the piezopotential-modulated change in Schottky barrier height (SBH), that is, the piezotronic effect. The on/off ratio of our device is ∼587, and a gauge factor of 3740 has been demonstrated, which is 19 times higher than that of Si and three times higher than those of carbon nanotubes and ZnO nanowires.

Antireflection effect of ZnO nanorod arrays

We demonstrate a practical optoelectronic application of ZnO nanorod arrays (NRAs) synthesized by a hydrothermal method serving as an antireflection coating (ARC). ZnO NRAs exhibit broadband and omnidirectional AR characteristics for unpolarized, transverse electric polarized, and transverse magnetic polarized light, which arise from the length variation of NRA profiles. Due to growth on any surface of devices/substrates with ease, ZnO NRAs as the broadband and omnidirectional ARCs can benefit greatly the performance of optoelectronic devices, such as light-emitting diodes and photovoltaics.

Light scattering by nanostructured anti-reflection coatings

The correlation between surface profiles of nanostructures and the behavior of scattered light, including specular and diffuse components, is demonstrated in detail. The nanorod arrays with large alignment variation exhibit broadband and omnidirectional anti-reflection properties due to the gradual index profile. This work provides insight into further structural design for nanostructured optoelectronic applications.

Supersensitive, Ultrafast, and Broad-Band Light-Harvesting Scheme Employing Carbon Nanotube/TiO2 Core–Shell Nanowire Geometry

We demonstrate a novel, feasible strategy for practical application of one-dimensional photodetectors by integrating a carbon nanotube and TiO(2) in a core-shell fashion for breaking the compromise between the photogain and the response/recovery speed. Radial Schottky barriers between carbon nanotube cores and TiO(2) shells and surface states at TiO(2) shell surface regulate electron transport and also facilitate the separation of photogenerated electrons and holes, leading to ultrahigh photogain (G = 1.4 × 10(4)) and the ultrashort response/recovery times (4.3/10.2 ms). Additionally, radial Schottky junction and defect band absorption broaden the detection range (UV-visible). The concept using metallic core oxide-shell geometry with radial Schottky barriers holds potential to pave a new way to realize nanostructured photodetectors for practical use.

Strain-Gated Piezotronic Transistors Based on Vertical Zinc Oxide Nanowires

Strain-gated piezotronic transistors have been fabricated using vertically aligned ZnO nanowires (NWs), which were grown on GaN/sapphire substrates using a vapor-liquid-solid process. The gate electrode of the transistor is replaced by the internal crystal potential generated by strain, and the control over the transported current is at the interface between the nanowire and the top or bottom electrode. The current-voltage characteristics of the devices were studied using conductive atomic force microscopy, and the results show that the current flowing through the ZnO NWs can be tuned/gated by the mechanical force applied to the NWs. This phenomenon was attributed to the piezoelectric tuning of the Schottky barrier at the Au-ZnO junction, known as the piezotronic effect. Our study demonstrates the possibility of using Au droplet capped ZnO NWs as a transistor array for mapping local strain. More importantly, our design gives the possibility of fabricating an array of transistors using individual vertical nanowires that can be controlled independently by applying mechanical force/pressure over the top. Such a structure is likely to have important applications in high-resolution mapping of strain/force/pressure.

Surface effects on optical and electrical properties of ZnO nanostructures

This article presents a comprehensive review of the current research addressing the surface effects on physical properties and potential applications of nanostructured ZnO. Studies illustrating the transport, photoluminescence (PL), and photoconductivity properties of ZnO with ultrahigh surface-to-volume (S/V) ratio are reviewed first. Secondly, we examine recent studies of the applications of nanostructured ZnO employing the surface effect on gas/chemical sensing, relying on a change of conductivity via electron trapping and detrapping process at the surfaces of nanostructures. Finally, we comprehensively review the photovoltaic (PV) application of ZnO nanostructures. The ultrahigh S/V ratios of nanostructured devices suggest that studies on the synthesis and PV properties of various nanostructured ZnO for dye-sensitized solar cells (DSSCs) offer great potential for high efficiency and low-cost solar cell solutions. After surveying the current literature on the surface effects on nano-structured ZnO, we conclude this review with personal perspectives on a few surface-related issues that remain to be addressed before nanostructured ZnO devices can reach their ultimate potential as a new class of industrial applications.

Single-ZnO-Nanowire Memory

Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.