Chiaki Kudo
Panasonic
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Publication
Featured researches published by Chiaki Kudo.
Materials Science Forum | 2008
Makoto Kitabatake; Masaki Tagome; Shun Kazama; Kenya Yamashita; Koichi Hashimoto; Kunimasa Takahashi; Osamu Kusumoto; Kazuya Utsunomiya; Masashi Hayashi; Masao Uchida; R. Ikegami; Chiaki Kudo; Shin Hashimoto
Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted in TO220 packages. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1400V. The SiC DACFET keeps the normally-off characteristics even at 150°C. Ron and specific Ron of the SiC DACFET is measured to be 62mΩ and 6.7 mΩcm2 at RT while those at 150°C change to 107 mΩ and 11.6 mΩcm2. The 400V / 3 kW DC-DC switched-mode power-conversion circuit with 100kHz switching was fabricated using the SiC DACFET and the SiC SBD. The turn-off switching loss reduces dramatically using the SiC-DACFET down to 77μJ/pulse which is less than 1/10 of that using the Si-IGBT.
Archive | 1997
Takaaki Ukeda; Chiaki Kudo; Toshiki Yabu
Archive | 1991
Takatoshi Yasui; Chiaki Kudo; Ichiro Nakao; Toyokazu Fujii; Yuka Terai; Shin-ichi Imai; Hiroshi Yamamoto; Yasushi Naito
Archive | 1999
Takaaki Ukeda; Chiaki Kudo; Toshiki Yabu
Archive | 1997
Takashi Nakabayashi; Chiaki Kudo
Archive | 2000
Takashi Nakabayashi; Chiaki Kudo
Archive | 2004
Katsuyuki Ikenouchi; Chiaki Kudo; Kazuo Tanimoto; 千秋 工藤; 勝行 池ノ内; 一夫 谷本
Archive | 2008
Chiaki Kudo; Kunimasa Takahashi; 千秋 工藤; 邦方 高橋
Archive | 2005
Chiaki Kudo
Archive | 2004
Chiaki Kudo
