Chiew-Seng Koay

High conversion efficiency mass-limited Sn-based laser plasma source for extreme ultraviolet lithography

Extreme ultraviolet lithography requires a high-efficiency light source at 13 nm that is free from debris. Our mass-limited Sn-based laser plasma source shows 1.2% conversion efficiency. Emission spectra from the source were obtained to observe the effects of Sn concentration and effects of laser intensity. Debris measurements were analyzed, and an enhanced repeller field configuration shows marked improvement in mitigating debris.

High conversion efficiency microscopic tin-doped droplet target laser-plasma source for EUVL

Light sources based on laser plasmas using tin as target material are known to provide high conversion efficiency of laser power to emission in the 13.5 nm spectral region. In addition, laser plasmas produced from microscopic droplet targets enable the utilization of the mass-limited concept which minimizes the effect of target debris produced from the laser plasma interaction. By combining the mass-limited target concept and tin as the choice of target material, we are developing an extreme-ultraviolet (EUV) light source that can supply high power while remaining essentially debris-free. This source uses tin-doped microscopic droplet liquid targets that are generated at high-repetition rates (>30 kHz), which allows convenient upward power scaling when coupled with a high averaged-power laser. Detailed studies of the radiation from this source have been made using a precision Nd:YAG laser. Broad parametric studies of the conversion efficiency along with in-band spectroscopy of this EUV source have been performed. The parametric dependence of conversion efficiency is established based on measurements made by the Flying Circus diagnostic tool and a calibrated high-resolution flat-field spectrometer. These measurements have been independently confirmed by the Flying Circus 2 team.

Comparative extreme ultraviolet emission measurements for lithium and tin laser plasmas

Detailed spectroscopic studies on extreme UV emission from laser plasmas using tin and lithium planar solid targets were completed. At 13.5 nm, the best conversion efficiency (CE) for lithium was found to be 2.2% at intensities near 7 x 10(10) W/cm(2). The highest CE measured for tin was near 5.0% at an intensity close to 1 x 10(11) W/cm(2).

Repeller field debris mitigation approach for EUV sources

We describe studies of the debris produced from a high-repetition-rate laser plasma EUVL source based on the mass-limited target concept. In particular, we are developing mass-limited target designs based on complex targets containing tin. Comprehensive analysis of witness-plate detection techniques can reveal many interesting details of the interaction regime, and the impact of the debris. These techniques include Optical Microscopy, Scanning Electron Microscopy, Atomic Force Microscopy, X-ray Photoelectron Spectroscopy, Auger Electron Spectroscopy, and Auger Electron Microscopy. We also describe developments of the repeller field concept of debris inhibition. This technique uses electrostatic fields to reduce the flux of plasma ions impinging on the EUV collimating optics. Here, the first measurements of debris mitigation of a tin-doped target are described, and comparisons with earlier measurements of the impact of repeller fields on ion emission from a mass-limited water-droplet target are made.

Laser plasma EUVL sources: progress and challenges

The most pressing technical issue for the success of EUV lithography is the provision of a high repetition-rate source having sufficient brightness, lifetime, and with sufficiently low off-band heating and particulate emissions characteristics to be technically and economically viable. We review current laser plasma approaches and achievements, with the objective of projecting future progress and identifying possible limitations and issues requiring further investigation.

Diagnostics for laser plasma EUV sources

A high repetition-rate laser plasma source, possessing distinct radiation and particle emission characteristics, is now a principal candidate light source for the next generation of technology for the fabrication of computer chips. For these sources to satisfy this critical need they will need to meet unprecedented levels of performance, stability and lifetime. We review here some of the principal diagnostics of the EUV radiation that are now being utilized in the metrology, spectroscopy and imaging of these sources.

EUV spectroscopy of mass-limited Sn-doped laser micro-plasmas

The 13 nm emission that results from laser plasmas created from tin targets, results from a milliard of transitions occurring in many ions of tin (Sn6+-Sn13+). Understanding the energy manifolds within these multiple states will further our ability to manipulate energy into the narrow emission band demanded by EUV Lithography. A combined experimental theoretical program is underway to measure and interpret the detailed EUV emission spectra from laser plasmas suitable for EUVL, particularly mass-limited droplet laser plasmas. We employ high resolution spectroscopy in the 2 - 60 nm wavelength regions to characterize the emission from the plasma. This is interpreted with the aid of combined hydrodynamic/ radiation transport computer models. The results of this study will have impact on the in-band EUV conversion efficiency, estimation of the out-of-band short-wavelength emission, and in the development of electron temperature plasma diagnostics.

Debris characterization and mitigation from microscopic laser-plasma tin-doped droplet EUV sources

The EUVL collector mirror reflectivity degradation can be measured as erosion of the mirror surface caused by the high energy ion emissions. Characterizing the ion emission permits the analysis of the mechanisms of erosion and provides the capability to reduce the high energy ion emission which directly reduces the erosion rate. The degradation can also be measured as deposition of particulate debris on the mirror surface. The debris particles have sizes of only a few nanometers. We have demonstrated that the use of electrostatic repeller fields mitigates large fraction of the particle transfer. Our microscopic tin-doped droplet target is a mass-limited target and is designed to limit the flux of uncharged particulate matter emanating from the target, with the eventual objective of only generating charged material. The latter then may be inhibited from degrading EUV optics with the use of electrostatic repeller fields and other mitigation schemes. We present tin-doped droplet target ion emission characteristics in terms of ion energy distribution obtained using our ion spectrometer. Extensive studies on particle generation by controlling plasma conditions and the repeller field effect on individual ion species and particles is also described.

High-efficiency tin-based EUV sources

We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lithography applications. Here we report advances in measurements of the spectral output, conversion efficiency, and debris emission from these sources. We also report progress in the use of repeller field debris inhibition techniques for this source.

Debris studies for the tin-based droplet laser-plasma EUV source

We are developing a mass-limited, laser plasma target concept that utilizes excited state transitions in tin ions as the source of 13.5 nm radiation, offering in-band conversion efficiencies greater than 1%. The ultimate objective of this EUV source strategy is the utilization of a target that is completely ionized by the laser. To determine the viability of this source for EUVL, we are making extensive measurements of the debris emanating from the target. Here we report on some of these measurements. Also under investigation are various methods of debris mitigation. We have previously shown the effectiveness of electrostatic fields for repelling ions from mass-limited targets, demonstrating improvements in multilayer mirror lifetimes in excess of an order of magnitude, positioning water droplet targets within reach of the EUVL roadmap requirements. Our investigation of debris utilizes various diagnostic techniques including ion collection, ion sputtering and witness-plate capture of particulate debris, and extensive post-mortem microscopic materials analysis.