Christian Kranert

Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3

We present X-ray diffraction and Raman spectroscopy investigations of a (100)-oriented (AlxGa1–x)2O3 thin film on MgO (100) and bulk-like ceramics in dependence on their composition. The thin film grown by pulsed laser deposition has a continuous lateral composition spread allowing to determine precisely the dependence of the phonon mode properties and lattice parameters on the chemical composition. For x < 0.4, we observe the single-phase β-modification. Its lattice parameters and phonon energies depend linearly on the composition. We determined the slopes of these dependencies for the individual lattice parameters and for nine Raman lines, respectively. While the lattice parameters of the ceramics follow Vegards rule, deviations are observed for the thin film. This deviation has only a small effect on the phonon energies, which show a reasonably good agreement between thin film and ceramics.

Raman tensor elements of β-Ga2O3.

The Raman spectrum and particularly the Raman scattering intensities of monoclinic

Lattice parameters and Raman-active phonon modes of (InxGa1–x)2O3 for x < 0.4

\beta\text{-Ga}_2\text{O}_3

Dielectric function in the spectral range (0.5–8.5)eV of an (Alx Ga1−x)2O3 thin film with continuous composition spread

are investigated by experiment and theory. The low symmetry of

Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinic Ga 2 O 3

\beta\text{-Ga}_2\text{O}_3

Dielectric function in the spectral range (0.5–8.5)eV of an (Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} thin film with continuous composition spread

results in a complex dependence of the Raman intensity for the individual phonon modes on the scattering geometry which is additionally affected by birefringence. We measured the Raman spectra in dependence on the polarization direction for backscattering on three crystallographic planes of

Raman Tensor Formalism for Optically Anisotropic Crystals.

\beta\text{-Ga}_2\text{O}_3

Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap

and modeled these dependencies using a modified Raman tensor formalism which takes birefringence into account. The spectral position of all 15 Raman-active phonon modes and the Raman tensor elements of 13 modes were determined and are compared to results from ab-initio calculations.The Raman spectrum and particularly the Raman scattering intensities of monoclinic β-Ga2O3 are investigated by experiment and theory. The low symmetry of β-Ga2O3 results in a complex dependence of the Raman intensity for the individual phonon modes on the scattering geometry which is additionally affected by birefringence. We measured the Raman spectra in dependence on the polarization direction for backscattering on three crystallographic planes of β-Ga2O3 and modelled these dependencies using a modified Raman tensor formalism which takes birefringence into account. The spectral position of all 15 Raman active phonon modes and the Raman tensor elements of 13 modes were determined and are compared to results from ab-initio calculations.

Exchange bias and magnetodielectric coupling effects in ZnFe2O4–BaTiO3 composite thin films

We present X-ray diffraction and Raman spectroscopy investigations of (InxGa1–x)2O3 thin films and bulk-like ceramics in dependence of their composition. The thin films grown by pulsed laser deposition have a continuous lateral composition spread allowing the determination of phonon mode properties and lattice parameters with high sensitivity to the composition from a single 2-in. wafer. In the regime of low indium concentration, the phonon energies depend linearly on the composition and show a good agreement between both sample types. We determined the slopes of these dependencies for eight different Raman modes. While the lattice parameters of the ceramics follow Vegards rule, deviations are observed for the thin films. Further, we found indications of the high-pressure phase InGaO3 II in the thin films above a critical indium concentration, its value depending on the type of substrate.

Raman active phonon modes of cubic In2O3

We determined the dielectric function of the alloy system (Alx Ga1−x)2O3 by spectroscopic ellipsometry in the wide spectral range from 0.5 eV to 8.5 eV and for Al contents ranging from x = 0.11 to x = 0.55. For the composition range x < 0.4, we observe single phase material in the β-modification and for larger Al content also the occurrence of γ-(Al,Ga)2O3. We derived spectra of the refractive index and the absorption coefficient as well as energy parameters of electronic band-band transitions by model analysis of the dielectric function. The dependence of the dielectric functions lineshape and the energy parameters on x is highly continuous, reflecting theoretical expectations. The data presented here provide a basis for a deeper understanding of the electronic properties of this material system and may be useful for device engineering.