Christophe Garnier

Will BiCMOS stay competitive for mmW applications

This work summarizes upcoming millimeter wave and high speed applications which will benefit from advanced SiGe BiCMOS process. The performance of a 230 GHz fT 280 GHz fmax process is detailed and future improvements are discussed. Intrinsic transistor performance for millimeter wave design has been compared with that of advanced 65 nm Low-Power CMOS. To help process comparison, design examples are also given and circuit optimizations to reach optimum noise figure are discussed. Recent realizations at 24 GHz and 77 GHz in SiGe BiCMOS are presented, demonstrating state of the art results on both receivers.

A 3.2GHz-sample-rate 800mHz bandwidth highly reconfigurable analog FIR filter in 45nm CMOS

A 16-tap analog FIR filter with 3.2 GHz-clock achieves fully reconfigurable transfer functions over an 800 MHz range. Time domain convolution is realized by switching programmable transconductance values and exploiting a current integration technique to merge sampling, summing and anti-aliasing functions. The circuit draws 65 mW from a 1.1 V supply and occupies 0.15 mm2 in 45 nm CMOS.