Philippe Delpech

Three-dimensional 35 nF/mm/sup 2/ MIM capacitors integrated in BiCMOS technology

Decoupling applications require high capacitance values. To optimize the chip performances, it appears particularly interesting to integrate them directly in interconnect levels, especially in BiCMOS technology. In order to reach this goal and minimize the area occupied by such devices, three-dimensional MiM capacitors have been introduced with different dielectrics: Ta/sub 2/O/sub 5/ deposited by MOCVD and A1/sub 2/O/sub 3/ by ALD. Thus, high capacitance density of 35nF/mm/sup 2/ has been reached. Through comparison between planar and three dimensional (3D) MIM capacitor characterization, it has been demonstrated that 3D MIM capacitor, named high density trench capacitor (HiDTC), architecture is a very promising candidate to integrate such high capacitance values.

Above IC integrated SrTiO3 high K MIM capacitors

This paper describes realization and characterization of SrTiO3 (STO) high K MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors.

Development of Embedded Three-Dimensional 35-nF/mm

This paper summarizes the electrical characterization of MIM capacitor realized in three dimensions. Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si₃N₄, Al₂O₃, Ta₂O₅ and two deposition methods, metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Selecting Al₂O₃ deposited by ALD, high density of 35 nF/mm² is obtained with low leakage current. Statistical measurements put forward the industrial robustness of the device integrated in BiCMOS technology. Three circuits embedding this new device are characterized: a high-pass filter, a voltage-controlled oscillator (VCO), and a phase-locked loop (PLL). They demonstrate excellent performances with significant area and assembly costs savings.

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This paper summarizes the electrical characterization of MIM capacitor realized in three-dimensional. High density of 35nF/mm2 is obtained with low leakage current. Its integration in BiCMOS technology is demonstrated and three circuits are characterized

MIM Capacitor and BiCMOS Circuits Characterization

This paper deals with the capacitance response of metal-insulator-metal (MIM) structures with 15 nm thick Al/sub 2/O/sub 3/ as dielectric. Electrical characterizations between 100 K and 450 K have been performed to study the temperature effect on the capacitance. An original model assuming that the permanent moment of the polar molecules in the Al/sub 2/O/sub 3/ film grows linearly with temperature is exposed to explain the experimental results.