Chun-Wen Paul Huang

Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

A fully integrated front-end IC is demonstrated for 802.11b/g transceivers with integrated power amplifiers. The SP3T-LNA architecture integrates Bluetooth® functionality with transmit and receive for wireless LAN. The transmit switch achieves a P1dB greater than 33.0 dBm at 2.5 GHz by employing a cross-biasing approach, transistor stacking and deep n-well process. Power handling techniques used for the switches and the associated performance tradeoffs are discussed. The measured noise figure of the LNA and the receive chain comprising both an LNA and a switch is 1.5 dB and 3.0 dB, respectively. The LNA achieves an IIP3 of 7.0 dBm while consuming 7.0 mA of current. The measured switching times are less than 350 ns. The front-end IC employs a 3.3 V supply and occupies 0.64 mm2 in 0.18 μm bulk CMOS technology.

Novel double pole double throw switchplexer that simplifies dual-band WLAN and MIMO front-end module designs

a novel dual-band DPDT T/R switchplexer is presented. The switchplexer has a low-loss Tx path and a fully integrated Rx diplexer using die area ≪ 0.15 mm². Tx path has 0.1 dB compression at ≫ 31.8 dBm with 1 dB insertion loss (IL) and ≫ 20 dB isolation from 2.4 to 5.9 GHz. The switch features ultra low EVM distortion up to 26 dBm power input with harmonic emission ≪ −50 dBm. Rx path has switch and diplexer losses of 2.0 dB and 2.2 dB IL for ‘b/g’ and ‘a’ bands, respectively. The band selectivity is ≫ 15 dB. These unique features simplify the dual-band front-end by reducing the total number of ICs to 2 or 3 in a simple low cost package.

A highly integrated dual band SiGe BiCMOS power amplifier that simplifies dual-band WLAN and MIMO front-end circuit designs

A highly integrated SiGe BiCMOS power amplifier for dual-band WLAN applications is presented. The PA has 2 and 3 stages of amplification for the ‘b/g’ and ‘a’ band, respectively, and integrates the input/output matching network, out-of-band rejection filter, power detector, and bias control. The die area is 1.7 × 1.6 mm2. The b/g amplifier achieves 28 dB gain with 19.5 dBm output power at 3% EVM and 185mA and harmonics of < −45dBm/Mhz. The a-band amplifier achieves 30 dB gain with 3% EVM at 19.0 dBm output with 220mA of current and harmonics < −50 dBm/MHz. The reported PA linearity, out-of-band rejection, and integration level exceeds previously reported WLAN dual-band SiGe PA designs.

A 5 x 5 mm Highly Integrated Dual-band WLAN Front-End Module Simplifies 802.11 a/b/g and 802.11n Radio Designs

A highly integrated 5 x 5 x 0.9 mm dual-band wireless LAN front-end module (FEM) is presented. The FEM features 29 dB gain and 19 dBm at 54 Mbps with EVM < 3% and 180 mA for 2.4 to 2.5 GHz. For 4.9 to 5.9 GHz transmission, the FEM delivers 25 dB gain and 17 dBm at 54 Mbps with EVM < 3% and 195 mA. The FEMs receive chains can be realized either with LAN having >11.4 dB gain LNA gain with NF < 2.5 dB for the low band and < 2.8 dB for the high band or with used a RX diplexer with <1 insertion loss. The FEM significantly simplifies 802.11 a/b/g radio designs and provides an effective building block for multichannel 802.11n radios designs.

A highly integrated single chip 5–6 GHz front-end IC based on SiGe BiCMOS that enhances 802.11ac WLAN radio front-end designs

A highly integrated 4.9-5.9 GHz single chip front-end IC (FEIC) is presented, which is based on SiGe BiCMOS, realized in a 1.6 mm2 chip area and in an ultra-compact 1.7 × 2.0 × 0.33 mm3 package. The Tx chain has >30 dB gain and meets -40 dB DEVM up to Pout of 15 dBm and -35 dB DEVM up to Pout of 17 dBm with a 3.3 V supply, insensitive to modulation bandwidths and duty cycle. The ultra-low back-off DEVM enables the emerging 1024-QAM applications. The integrated log detector enhances the dynamic range for the transmit power control. The Rx chain features <;2.8 dB NF and 15 dB gain with 3 dBm IIP3 and 10 dB bypass attenuator with 23 dBm IIP3. All the unique features enhance the front-end circuit designs of complex radios based on the 802.11ac standard.

Innovative architecture for dual-band WLAN and MIMO frontend module based on a single pole, three throw switch-plexer

An innovative architecture for a dual-band front-end module (FEM) for WiFi and MIMO radios is presented. The FEM consists of a dual-band power amplifier and a SP3T switch-plexer. The SP3T switch-plexer has a SP3T switch and an integrated Rx diplexer. Tx switch paths show 0.1 dB compression at ≫ 33.5 dBm with ≪1 dB insertion loss (IL) along with ≫ 18 dB isolation. Rx switch/diplexer path has ≪ 2.0 dB IL for both bands. The band selectivity is ≫ 15 dB. These qualities simplify the construction of dual-band FEM by reducing assembly complexity and post PA loss resulting in a high band performance of 3% EVM at 18 dBm output and ≪ −50 dBm/MHz harmonic emissions in a 4 × 4 mm package.

Low power consumption 2.4 GHz WLAN front-end module for a multiple radio handset

A compact 5/spl times/6/spl times/1.4 mm/sup 3/ 2.4 GHz wireless LAN (WLAN) front-end module (FEM) is presented. The FEM features low power consumption of 145 mA for 18 dBm output with 3% EVM at 54 Mbps transmissions, <-170 dBm/Hz noise emission up to 2 GHz, and high out-of-band interference suppression, able to support a multi-radio handset with simultaneous operations. The FEM has a 30 dB in-band gain, >24 dB transmit/receive (T/R) isolation under 10:1 mismatch, an integrated regulator, and a temperature compensated power detector. All these unique features provide an easiest integration of a WLAN radio into a multi-radio handset.

Highly linear SOI single-pole, 4-throw switch with an integrated dual-band LNA and bypass attenuators

An innovative Silicon-On-Insulator (SOI) SP4T T/R switch is presented. The SP4T switch consists of 2 receive paths with an integrated dual-band LNA and bypass attenuators along with 2 high linearity matched transmit paths. Tx paths feature 0.1 dB compression to 34 dBm input power and 0.5–0.8 dB insertion loss from 1 to 6 GHz with ≫ 20 dB return loss and ≫ 25 dB isolation. Receive paths feature 16 dB gain with 2.3 dB NF for 2.4–2.5 GHz and 14 dB gain with 2.4–2.6 dB NF for 4.9–5.9 GHz. The band selectivity exceeds 40 dB. Cascading with a dual-band WLAN PA, a complex dual-band WLAN/MIMO front-end module (FEM) can be easily constructed with low assembly complexity and post PA losses resulting in dual-band transmit linearity ≫18 dBm with EVM ≪ 3% and ≪ −50 dBm/MHz harmonic emissions within a 4 × 5 mm QFN package.

Ultra Linear Dual-band WLAN Front-End Module for 802.11 a/b/g/n Applications with Wide Voltage and Temperature Range Operation

A compact 7 times 8 times 1.1 mm3 dual-band Wireless LAN front-end module (FEM) having high linearity and wide temperature (-40 to 85degC) and voltage (2.7 to 4.5 V) operating ranges is presented. The FEM features 28 dB gain and 19.8 dBm at 54 Mbps with EVM < 3% and 230 mA for 2.4 to 2.5 GHz. For 4.9 to 5.9 GHz, the FEM delivers 25 dB gain and 16.5 dBm linear output power at 54 Mbps with EVM < 3% and 190 mA. The FEMs receive chains feature low insertion losses, 1.5 and 2.0 dB for low and high band respectively, and >25 dB RX to TX isolation. All these unique features simplify 802.11 a/b/g and 802.1 in radio designs.

Highly linear 4.9-5.9 GHz WLAN front-end module based on SiGe BiCMOS and SOI

A high linearity 4.9–5.9 GHz T/R FEM is presented. The FEM consists of a SiGe BiCMOS PA and a single-pole double-throw SOI switched LNA in a 3 × 3 × 0.6 mm QFN package. The Tx chain has > 31 dB gain and meets 3% EVM up to 22 dBm with harmonic and out-of-band emissions compliant to regulatory limits. The receive chain features 2 dB NF and 14 dB gain with −3 dBm IP1dB for LNA mode and 4.5 dB attenuation in bypass mode with 10 dBm IP1dB. All these features simplify the front-end circuit designs of complex WLAN/MIMO radios.