Mark Doherty

A highly integrated dual band SiGe BiCMOS power amplifier that simplifies dual-band WLAN and MIMO front-end circuit designs

A highly integrated SiGe BiCMOS power amplifier for dual-band WLAN applications is presented. The PA has 2 and 3 stages of amplification for the ‘b/g’ and ‘a’ band, respectively, and integrates the input/output matching network, out-of-band rejection filter, power detector, and bias control. The die area is 1.7 × 1.6 mm2. The b/g amplifier achieves 28 dB gain with 19.5 dBm output power at 3% EVM and 185mA and harmonics of < −45dBm/Mhz. The a-band amplifier achieves 30 dB gain with 3% EVM at 19.0 dBm output with 220mA of current and harmonics < −50 dBm/MHz. The reported PA linearity, out-of-band rejection, and integration level exceeds previously reported WLAN dual-band SiGe PA designs.

Innovative architecture for dual-band WLAN and MIMO frontend module based on a single pole, three throw switch-plexer

An innovative architecture for a dual-band front-end module (FEM) for WiFi and MIMO radios is presented. The FEM consists of a dual-band power amplifier and a SP3T switch-plexer. The SP3T switch-plexer has a SP3T switch and an integrated Rx diplexer. Tx switch paths show 0.1 dB compression at ≫ 33.5 dBm with ≪1 dB insertion loss (IL) along with ≫ 18 dB isolation. Rx switch/diplexer path has ≪ 2.0 dB IL for both bands. The band selectivity is ≫ 15 dB. These qualities simplify the construction of dual-band FEM by reducing assembly complexity and post PA loss resulting in a high band performance of 3% EVM at 18 dBm output and ≪ −50 dBm/MHz harmonic emissions in a 4 × 4 mm package.

Highly linear SOI single-pole, 4-throw switch with an integrated dual-band LNA and bypass attenuators

An innovative Silicon-On-Insulator (SOI) SP4T T/R switch is presented. The SP4T switch consists of 2 receive paths with an integrated dual-band LNA and bypass attenuators along with 2 high linearity matched transmit paths. Tx paths feature 0.1 dB compression to 34 dBm input power and 0.5–0.8 dB insertion loss from 1 to 6 GHz with ≫ 20 dB return loss and ≫ 25 dB isolation. Receive paths feature 16 dB gain with 2.3 dB NF for 2.4–2.5 GHz and 14 dB gain with 2.4–2.6 dB NF for 4.9–5.9 GHz. The band selectivity exceeds 40 dB. Cascading with a dual-band WLAN PA, a complex dual-band WLAN/MIMO front-end module (FEM) can be easily constructed with low assembly complexity and post PA losses resulting in dual-band transmit linearity ≫18 dBm with EVM ≪ 3% and ≪ −50 dBm/MHz harmonic emissions within a 4 × 5 mm QFN package.

A Silicon Germanium, High Efficiency Power Amplifier Chipset for GSM/DCS-PCS/WCDMA Handset Applications

A power amplifier chipset for GSM and WCDMA mobile handset PAs has been designed and fabricated in the IBM Silicon Germanium BiCMOS 5AM process. This 3-chip set offers competitive performance and reliability for integrated GSM/DCS-PCS/WCDMA applications. The constant envelope (GSM and DCS-PCS) power amplifier designs are optimized for efficiency under pulsed GMSK conditions, achieving 55% and 45% PAE at 900 and 1880 MHz, respectively, at 3.4 V. The linear (WCDMA) amplifier performance has been optimized for continuous HPSK operation with - 36dBc ACPR maximum with up to 27 dBm output power. This family of PAs relies on two biasing architectures to address pulsed and linear operation by effectively utilizing the broad library of devices available in the BiCMOS process. Power device design and thermal conductivity of the silicon substrate are such that reliable operating temperatures during multi-slot GSM and WCDMA operation are assured. ICs are assembled in low-cost, 50-ohm matched modules or 4mm leadless (QFN) packages.

Highly linear 4.9-5.9 GHz WLAN front-end module based on SiGe BiCMOS and SOI

A high linearity 4.9–5.9 GHz T/R FEM is presented. The FEM consists of a SiGe BiCMOS PA and a single-pole double-throw SOI switched LNA in a 3 × 3 × 0.6 mm QFN package. The Tx chain has > 31 dB gain and meets 3% EVM up to 22 dBm with harmonic and out-of-band emissions compliant to regulatory limits. The receive chain features 2 dB NF and 14 dB gain with −3 dBm IP1dB for LNA mode and 4.5 dB attenuation in bypass mode with 10 dBm IP1dB. All these features simplify the front-end circuit designs of complex WLAN/MIMO radios.

Through-Silicon via Technology for RF and Millimetre-Wave Applications

This chapter focuses on some of the radiofrequency (RF) and millimetre-wave (MMW) applications that a through-silicon via (TSV) technology can enable. We will first discuss a grounded TSV application for a RF wireless communication power amplifier that is in mass production. A grounded TSV is essentially a metal connection that takes the active device interconnect to a package ground without needing to go through wire bond. A tungsten-filled grounded TSV delivers over 75% reduction in inductance compared to a traditional wire bond, thus enabling higher frequency applications in silicon technology. Such a grounded TSV is seamlessly integrated into a 350-nm SiGe BiCMOS. Next we show feasibility on insulated TSV that is utilised in a digital technology for high speed I/O functions, such as, in an advanced microprocessor. The insulated TSV sits in a 3D-IC carrier silicon chip that is made compatible with standard 90-nm high performance CMOS processing. The TSV arrays are designed to provide minimal resistance and inductance with excellent yield and breakdown voltage characteristics. A commercial application of this concept is for the emerging 100-Gb Ethernet that requires almost 1 Tbps data transmission between ICs. This concept of insulated via in a 3D-IC environment is then extended to a 130-nm MMW SiGe BiCMOS technology. We introduce the concept of a Wilkinson power divider that can be utilised in a 60-GHz phased array radar system.