Chung-Yu Lin

Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication.

An advanced light-fidelity (Li-Fi) system based on the blue Gallium nitride (GaN) laser diode (LD) with a compact white-light phosphorous diffuser is demonstrated for fusing the indoor white-lighting and visible light communication (VLC). The phosphorous diffuser adhered blue GaN LD broadens luminescent spectrum and diverges beam spot to provide ample functionality including the completeness of Li-Fi feature and the quality of white-lighting. The phosphorous diffuser diverged white-light spot covers a radiant angle up to 120o with CIE coordinates of (0.34, 0.37). On the other hand, the degradation on throughput frequency response of the blue LD is mainly attributed to the self-feedback caused by the reflection from the phosphor-air interface. It represents the current state-of-the-art performance on carrying 5.2-Gbit/s orthogonal frequency-division multiplexed 16-quadrature-amplitude modulation (16-QAM OFDM) data with a bit error rate (BER) of 3.1 × 10−3 over a 60-cm free-space link. This work aims to explore the plausibility of the phosphorous diffuser diverged blue GaN LD for future hybrid white-lighting and VLC systems.

Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography

GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a 12-fold photonic quasi-crystal (PQC) by nano-imprint lithography (NIL) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 μm × 350 μm, the light output power of our thin-film LED with a 12-fold PQC structure reaches 41 mW. This result is an enhancement of 78% when compared with the output power of a VLED without a PQC structure. In addition, the corresponding light radiation pattern shows a narrower beam shape due to the strong guided light extraction effect by the formed PQC structure in the vertical direction. (Some figures in this article are in colour only in the electronic version)

Enhanced light extraction of InGaN-based green LEDs by nano-imprinted 2D photonic crystal pattern

In this paper, we propose a simple, low cost and mass producible nanoimprint lithography (NIL) method to texture the surface of GaN-based light emitting diodes (LEDs) with a two-dimensional photonic crystal (2DPC). Such a 2DPC structure not only enhanced the light output power but also changed the far-field pattern simultaneously. Also, a TiO2/SiO2 omnidirectional reflector (ODR) was deposited on the backside of the LEDs to further increase the light output power. Under 350 mA current injection, it was found that forward voltages were 3.35, 3.34 and 3.75 V while the light output powers of the LEDs were 59.5, 92.5 and 112.1 mW for the conventional LED, the PCLED with 20 nm depth, and the PCLED with 120 nm depth all with chip size of 1 mm × 1 mm, respectively. A 88.4% enhancement in light output power of PCLED with a 120 nm depth and ODR on the backside could be achieved when compared to the conventional LED under the driving current of 350 mA. From the measurement results, it was also found that the NIL process does not degrade the electrical properties of the fabricated LEDs.

Enhancement of light output power of GaN-based light-emitting diodes using a SiO(2) nano-scale structure on a p-GaN surface

GaN (gallium nitride)-based light-emitting diodes (LEDs) with a nano-scale SiO2 structure between a transparent indium-tin oxide (ITO) layer and p-GaN were fabricated. The forward voltage at 20 mA for a GaN-based LED with a SiO2 nano-scale structure was slightly higher than that of a conventional GaN-based LED because the total area of the p-type metal contact between the transparent ITO layer and p-GaN was smaller. However, the light output power for the GaN-based LED with a nano-scale structured SiO2 at 20 mA was 24% higher than that for a conventional GaN-based LED structure. This increase in the light output power is mostly attributed to the scattering of light from the SiO2 photonic quasi-crystal (PQC) layer.

Fabrication and characteristics of thin-film InGaN–GaN light-emitting diodes with TiO2/SiO2 omnidirectional reflectors

In this paper, a novel GaN-based thin-film vertical injection light-emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. The designed ODR, consisting of alternating TiO2 and SiO2, layers possesses a complete photonic band gap within the blue region of interest. The arrays of the conducting channels are integrated into the TiO2/SiO2 ODR structure for vertically spreading the current. Assisted by the laser lift-off and photo-enhanced chemically etched surface roughening process, the light output power and the external quantum efficiency of our thin-film LED with a TiO2/SiO2 ODR (at a driving current of 350 mA and with chip size of 1 mm × 1 mm) reached 330 mW and 26.7%, increased by 18% and 16%, respectively, compared with the results from the thin-film LED with an Al mirror. By examining the radiation patterns of the LEDs, the optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.

39-GHz Millimeter-Wave Carrier Generation in Dual-Mode Colorless Laser Diode for OFDM-MMWoF Transmission

By using a nully biased MZM to modulate an incoming single-mode light into a double sideband (CCA-DSB or CCS-DSB) master with preserved or suppressed central carrier, the directly OFDM encoded dual-mode colorless laser diode is performed for a successful fusion between wired and wireless links to establish a 5G-based MMWoF system. The dual-mode L-band optical carrier successfully delivers a 36-Gb/s OFDM data with a BER of 3.2 × 10-3, while the stabilized 39-GHz mm-wave carrier can provide wireless 4-Gb/s 16-QAM OFDM data with 16.6-dB SNR. The in-situ 39-GHz mm-wave carrier can be synthesized by optically heterodyne mixing the dual-mode carrier at remote node. When injection-locking with the CCS-DSB master, the dual-mode slave colorless laser diode improves its central carrier suppression ratio and RIN to 38 dB and -104 dBc/Hz, respectively. In comparison, the dual-DFBLD master injection-locking mixed mm-wave carrier is relatively unstable due to the individual DFBLDs at free-running condition. With the CCS-DSB master, the mm-wave carrier self-beat from the dual-mode optical carrier exhibits a narrow linewidth of <;3 kHz with high purity and stability. Such a dual-mode colorless laser diode-based MMWoF link is capable of fusing the fiber wired and the 5G wireless links demanded in the near future.

Improvement of light output in GaN-based power chip light-emitting diodes with a nano-rough surface by nanoimprint lithography

The enhancement of light extraction of gallium nitride (GaN)-based power chip (PC) light-emitting diodes (LEDs) with a p-GaN rough surface by nanoimprint lithography (NIL) is presented. At a driving current of 350 mA and a chip size of 1 mm × 1 mm, the light output power of the PC LEDs with a p-GaN rough surface (etching depth from 130 to 150 nm) showed an enhancement of 24% on wafer when compared with the same device without NIL. Current‐voltage results indicated an ohmic contact by the increase in the contact area of the nano-roughened surface at 200 mA. This paper offers a promising potential for enhancing the output powers of commercial LEDs. (Some figures in this article are in colour only in the electronic version)

Hybrid photonic crystal light-emitting diode renders 123% color conversion effective quantum yield

Colloidal quantum dots (QDs) have emerged as promising color conversion light emitters for solid-state lighting applications [Nat. Photonics7, 13 (2012)NPAHBY1749-488510.1038/nphoton.2012.328 due to their emission tunability and near-unity photoluminescence quantum yields. In the current commercial LEDs, QDs are dispersed into an encapsulation layer in a far-field architecture, where the majority of the light emitted by the LED remains trapped within the epitaxy due to total internal reflection, drastically reducing the out-coupling efficiency. In this paper, we demonstrate a photonic quasi-crystal hybrid LED geometry that allows QD emitters to be placed in close proximity to the multiple quantum wells (MQWs) of the active area. This architecture greatly improves the coupling between MQWs and QDs, simultaneously allowing for a non-radiative resonant energy transfer between the MQWs and the QDs and near-field radiative coupling of trapped (guided) modes in the LED to the emitters. In this configuration, we demonstrate record-breaking effective quantum yields reaching 123% for single-color conversion LEDs and 110% for white light-emitting devices.

Four-Wave-Mixing Suppression of Master-to-Slave Injection-Locked Two-Wavelength FPLD Pair for MMW-PON

The four-wave-mixing (FWM) suppression of a master-to-slave injection-locked two-wavelength Fabry-Perot laser diode (FPLD) pair is investigated from the viewpoint of integrating fiber-optic wired and millimeter-wave (MMW) wireless networks for mobile and satellite communications. This is achieved by shifting the FWM side modes away from the cavity mode to avoid FWM enhancement induced by cavity resonance. Mode-deviated two-wavelength injection from a 900-μm master FPLD to a 600-μm slave FPLD successfully suppresses the resonant FWM side modes to -31 and -35 dBm, which enables the transmission of 18-Gb/s 64-quadrature amplitude modulation orthogonal frequency-division multiplexing (QAM OFDM) data with error vector magnitude (EVM), signal-to-noise ratio (SNR), and bit error rate (BER) values of 6.3%, 24 dB, and 1.6 × 10-4, respectively. The FWM-suppressed 600-μm slave shows lower chromatic dispersion than that of the 750-μm slave. In addition, a 47-GHz MMW carrier remotely beat by the two-wavelength-injected slave enables the transmission of passband 2-Gb/s 4-QAM OFDM data with EVM, SNR, and BER values of 36.3%, 8.8 dB, and 2.9 × 10-3, respectively, after 25-km single-mode fiber wired and 1.6-m free-space wireless transmission.

Investigation of InGaN/GaN power chip light emitting diodes with TiO2/SiO2 omnidirectional reflector

Enhancements of light extraction of GaN-based power chip (PC) LEDs with and without rough surface on p-GaN and TiO2/SiO2 omnidirectional reflector (ODR) on the bottom are presented. Motivated by phosphor-conversion white light applications, the peak-emitting wavelength of our studied PC LEDs is chosen to be 455 nm and the fabricated ODR is designed for the same wavelength regime. At a driving current of 350 mA and a chip size of 1 mm × 1 mm on a TO-can package, the light output power of the PC LED with ODR on the bottom and pit type of rough surface on p-GaN is enhanced by 67% when compared with the same device without ODR and rough surface. Furthermore, by examining the radiation patterns, the PC LED with the ODR and rough surface shows stronger enhancement around the vertical direction. Our results provide promising potential to increase output powers of commercial light emitting devices, especially for white light applications.