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Chunyu Zhou

Xidian University

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Publication

Featured researches published by Chunyu Zhou.

international conference on electron devices and solid-state circuits | 2011

A compact threshold voltage model for the novel high-speed semiconductor device IMOS

Yuchen Li; Heming Zhang; Huiyong Hu; Xiaobo Xu; Chunyu Zhou; Bin Wang

IMOS allows very sharp subthreshold slopes, down to a few mV/dec. A threshold voltage model is proposed in different distribution of surface electric field and in the condition of avalanche breakdown. Model verification is carried out using ISE. Good agreement is obtained between the models calculations and the simulated results.

Science China-physics Mechanics & Astronomy | 2012

Longitudinal, transverse, density-of-states, and conductivity masses of electrons in (001), (101) and (111) biaxially-strained-Si and strained-Si1−xGex

Jianjun Song; Chao Yang; Heming Zhang; Huiyong Hu; Chunyu Zhou; Bin Wang

Journal of Central South University | 2014

Double-gate tunnel field-effect transistor: Gate threshold voltage modeling and extraction

Yuchen Li; Heming Zhang; Huiyong Hu; Yuming Zhang; Bin Wang; Chunyu Zhou

Solid-state Electronics | 2013

Analytical model for quasi-static C–V characteristics of strained-Si/SiGe pMOS capacitor

Bin Wang; Heming Zhang; Huiyong Hu; Bin Shu; Chunyu Zhou; Yuchen Li

Journal of Central South University | 2014

Effect of substrate doping on threshold voltages of buried channel pMOSFET based on strained-SiGe technology

Bin Wang; Heming Zhang; Huiyong Hu; Yuming Zhang; Chunyu Zhou; Yuchen Li

Journal of Central South University | 2013

Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET

Bin Wang; Heming Zhang; Huiyong Hu; Yu Ming Zhang; Chunyu Zhou; Yuchen Li

Archive | 2012

Self-aligned-technology-based tri-polycrystal SOI (Silicon On Insulator), SiGe and HBT (Heterojunction Bipolar Transistor) integrated device and preparation method thereof

Heming Zhang; Bin Wang; Rongxi Xuan; Huiyong Hu; Jianjun Song; Haidong Wang; Chunyu Zhou; Yue Hao

Archive | 2012

Double-polysilicon SOI (Silicon On Insulator) SiGe HBT (Heterojunction Bipolar Transistor) integrated device based on self-aligned technology and preparation method thereof

Huiyong Hu; Jianjun Song; Bin Wang; Heming Zhang; Rongxi Xuan; Haidong Wang; Chunyu Zhou; Yue Hao

Archive | 2012

Mixed crystal face double polycrystal BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device and manufacturing method thereof

Heming Zhang; Yi Lv; Chunyu Zhou; Rongxi Xuan; Huiyong Hu; Bin Shu; Jianjun Song; Yue Hao

Archive | 2012

Tri-strain BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device based on SiGe HBT (Heterojunction Bipolar Transistor) and preparation method

Huiyong Hu; Jianjun Song; Rongxi Xuan; Chunyu Zhou; Heming Zhang; Yuchen Li; Bin Shu; Yue Hao

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Heming Zhang

Xidian University

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Huiyong Hu

Xidian University

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Jianjun Song

Xidian University

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Rongxi Xuan

Xidian University

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Bin Shu

Xidian University

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Bin Wang

Xidian University

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Yuchen Li

Xidian University

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Xianying Dai

Xidian University

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Yuming Zhang

Xidian University

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Chao Yang

Xidian University

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