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Dive into the research topics where Xianying Dai is active.

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Featured researches published by Xianying Dai.


international conference on electron devices and solid-state circuits | 2009

Fabrication of high compressive stress silicon nitride membrane in strained silicon technology

Bin Shu; Heming Zhang; Rongxi Xuan; Xianying Dai; Huiyong Hu; Jianjun Song; Liang Liang; Jianan Cui

The mechanism of compressive stress in silicon nitride membrane is studied in this paper. The effects of the various process parameters on the compressive stress in silicon nitride are analyzed and discussed on the basis of the current method using PECVD equipment. The high compressive stress silicon nitride membrane has been fabricated on the optimization of the process parameters, and the compressive stress is up to −1.08GPa. Finally, the method of further improving the compressive stress in silicon nitride membrane is put forward.


Archive | 2010

SOI three-dimensional CMOS integrated component and preparation method thereof

Jianjun Song; Huiyong Hu; Heming Zhang; Rongxi Xuan; Bin Shu; Guanyu Wang; Xianying Dai


Science China-physics Mechanics & Astronomy | 2010

Valence band structure of strained Si/(111)Si1−xGex

Jianjun Song; HeMing Zhang; Huiyong Hu; Xianying Dai; Rongxi Xuan


Archive | 2010

Three-dimensional quantum well CMOS integrated device and preparation method thereof

Jianjun Song; Xianying Dai; Huiyong Hu; Bin Shu; Lixia Zhao; Heming Zhang; Rongxi Xuan


Archive | 2010

Method for preparing nano CMOS integrated circuit by micro process

Xianying Dai; Jianjun Song; Huiyong Hu; Xiaoyan Wang; Bin Shu; Heming Zhang; Rongxi Xuan; Guanyu Wang


Archive | 2010

Method for preparing polycrystal SiGe gate nano CMOS integrated circuit by SiN masking technique

Heming Zhang; Bin Shu; Guanyu Wang; Jiangtao Qu; Xiaobo Xu; Rongxi Xuan; Jianjun Song; Lixia Zhao; Huiyong Hu; Xianying Dai


Archive | 2009

Method for preparing polycrystal SiGe gate nano CMOS integrated circuit by micro process

Huiyong Hu; Heming Zhang; Bin Shu; Rongxi Xuan; Xianying Dai; Jianjun Song; Lixia Zhao; Jiangtao Qu; Xiaobo Xu


Archive | 2009

Poly-SiGe gate three-dimensional strain CMOS integrated component and preparation method thereof

Huiyong Hu; Heming Zhang; Xianying Dai; Rongxi Xuan; Jianjun Song; Bin Shu; Xiaoyan Wang


Archive | 2009

Method for preparing nano CMOS integrated circuit by SiO2 masking technique

Huiyong Hu; Heming Zhang; Xianying Dai; Jianjun Song; Bin Shu; Rongxi Xuan; Lixia Zhao; Xiaoyan Wang


Archive | 2009

Method for preparing polycrystal SiGe gate nano-scale CMOS integrated circuit based on multilayered auxiliary structure

Heming Zhang; Xianying Dai; Bin Shu; Rongxi Xuan; Huiyong Hu; Jianjun Song; Guanyu Wang; Xiaobo Xu; Jiangtao Qu

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