Colin R. Woods

Cloning of Dirac fermions in graphene superlattices

Superlattices have attracted great interest because their use may make it possible to modify the spectra of two-dimensional electron systems and, ultimately, create materials with tailored electronic properties. In previous studies (see, for example, refs 1, 2, 3, 4, 5, 6, 7, 8), it proved difficult to realize superlattices with short periodicities and weak disorder, and most of their observed features could be explained in terms of cyclotron orbits commensurate with the superlattice. Evidence for the formation of superlattice minibands (forming a fractal spectrum known as Hofstadter’s butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate’s moiré potential acts as a superlattice and leads to profound changes in the graphene’s electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity, accompanied by reversal of the Hall effect. The latter indicates that the effective sign of the charge carriers changes within graphene’s conduction and valence bands. Strong magnetic fields lead to Zak-type cloning of the third generation of Dirac points, which are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices such as this one provide a way of studying the rich physics expected in incommensurable quantum systems and illustrate the possibility of controllably modifying the electronic spectra of two-dimensional atomic crystals by varying their crystallographic alignment within van der Waals heterostuctures.

Commensurate-incommensurate transition in graphene on hexagonal boron nitride

When a crystal is subjected to a periodic potential, under certain circumstances it can adjust itself to follow the periodicity of the potential, resulting in a commensurate state. Of particular interest are topological defects between the two commensurate phases, such as solitons and domain walls. Here we report a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN). Depending on the rotation angle between the lattices of the two crystals, graphene can either stretch to adapt to a slightly different hBN periodicity (for small angles, resulting in a commensurate state) or exhibit little adjustment (the incommensurate state). In the commensurate state, areas with matching lattice constants are separated by domain walls that accumulate the generated strain. Such soliton-like objects are not only of significant fundamental interest, but their presence could also explain recent experiments where electronic and optical properties of graphene-hBN heterostructures were observed to be considerably altered.

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulfides and hBN are found to exhibit consistently high carrier mobilities of about 60 000 cm(2) V(-1) s(-1). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide, and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ∼1000 cm(2) V(-1) s(-1). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.

Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere

Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest react and decompose in air, which has severely hindered their investigation and potential applications. Here we introduce a remedial approach based on cleavage, transfer, alignment, and encapsulation of air-sensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals that are of intense scientific interest but are unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, which is in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.

WSe2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature

Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for optoelectronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2- and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250× more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.

Heterostructures Produced from Nanosheet-Based Inks

The new paradigm of heterostructures based on two-dimensional (2D) atomic crystals has already led to the observation of exciting physical phenomena and creation of novel devices. The possibility of combining layers of different 2D materials in one stack allows unprecedented control over the electronic and optical properties of the resulting material. Still, the current method of mechanical transfer of individual 2D crystals, though allowing exceptional control over the quality of such structures and interfaces, is not scalable. Here we show that such heterostructures can be assembled from chemically exfoliated 2D crystals, allowing for low-cost and scalable methods to be used in device fabrication.

Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene

Josephson junctions based on graphene exhibit tunable proximity effects. The appearance of superconducting states when changing magnetic field and carrier concentration has now been investigated—some proximity effect survives for fields above 1 T.

Photoelectrochemistry of Pristine Mono- and Few-Layer MoS2.

Two-dimensional crystals are promising building blocks for the new generation of energy materials due to their low volume, high surface area, and high transparency. Electrochemical behavior of these crystals determines their performance in applications such as energy storage/conversion, sensing, and catalysis. Nevertheless, the electrochemistry of an isolated monolayer of molybdenum disulfide, which is one of the most promising semiconducting crystals, has not been achieved to date. We report here on photoelectrochemical properties of pristine monolayer and few-layer basal plane MoS2, namely the electron transfer kinetics and electric double-layer capacitance, supported by an extensive physical and chemical characterization. This enables a comparative qualitative correlation among the electrochemical data, MoS2 structure, and external illumination, although the absolute magnitudes of the electron transfer and capacitance are specific to the redox mediator and electrolyte used in these measurements ([Ru(NH3)6](3+/2+) and LiCl, respectively). Our work shows a strong dependence of the electrochemical properties on the number of MoS2 layers and illumination intensity and proves that an effective interlayer charge transport occurs in bulk MoS2. This highlights the exciting opportunities for tuning of the electrochemical performance of MoS2 through modification of its structure, external environment, and illumination.

Purity of Graphene Oxide determines its antibacterial activity

Nanomaterials based on two-dimensional (2D) atomic crystals are considered to be very promising for various life-science and medical applications, from drug delivery to tissue modification. One of the most suitable materials for these purposes is graphene oxide (GO), thanks to a well-developed methods of production and water solubility. At the same time, its biological effect is still debated. Here we demonstrate that highly purified and thoroughly washed GO neither inhibited nor stimulated the growth of E.coli, ATCC25922; E.coli NCIMB11943 and S.aureus ATCC25923 at concentrations of up to 1 mg ml−1. Moreover, transmission electron microscopy (TEM) of GO exposed bacteria did not reveal any differences between GO exposed and not exposed populations. In contrast, a suspension of insufficiently purified GO behaved as an antibacterial material due to the presence of soluble acidic impurities, that could be removed by extended purification or neutralisation by alkaline substrates. A standardised protocol is proposed for the generation of clean GO, so it becomes suitable for biological experiments. Our findings emphasise the importance of GO purification status when dealing with biological systems as the true effect of material can be masked by the impact of impurities.