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Dive into the research topics where Colin S. Bill is active.

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Featured researches published by Colin S. Bill.


international solid-state circuits conference | 1996

A 55 ns 0.35 /spl mu/m 5 V-only 16 M flash memory with deep-power-down

Bhimachar Venkatesh; Michael S. C. Chung; S. Govindachar; V. Santurkar; Colin S. Bill; Ravi P. Gutala; D. Zhou; J. Yu; M. Van Buskirk; Shoichi Kawamura; Kazuhiro Kurihara; H. Kawashima; H. Watanabe

An embedded 5 V only 16 M flash memory has an on-chip state machine that generates embedded program and erase algorithms, eliminating system execution of these operations. The system issues a series of commands decoded by the state machine for on-chip execution. It is a /spl times/8 part with a read/busy pin to indicate to the system if the part is in an embedded mode, and a RESETB pin to terminate any operation being executed by the state machine and reset the part to the read mode. Erase is by applying a negative voltage to the control gate of the array and a positive voltage VS to the sector array source.


international solid-state circuits conference | 1985

A 64K EEPROM with extended temperature and page mode operation

P. Suciu; M. Briner; Colin S. Bill; D. Rinerson

A1.8muN channel 64K EEPROM with temperature operation from -55°C to +125°C will be described. Page mode allows writing of 32bytes in 10μs.


Archive | 1996

Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells

Colin S. Bill; Sameer Haddad


Archive | 1998

Erase verify scheme for NAND flash

Shane Hollmer; Chung-You Hu; Binh Quang Le; Pau-Ling Chen; Jonathan Su; Ravi P. Gutala; Colin S. Bill


Archive | 1997

Bit line discharge method for reading a multiple bits-per-cell flash EEPROM

Colin S. Bill; Ravi P. Gutala; Qimeng Zhou; Jonathan Su


Archive | 1996

Erase method for page mode multiple bits-per-cell flash EEPROM

Colin S. Bill; Jonathan Su; Ravi P. Gutala


Archive | 2000

Automated reference cell trimming verify

Feng Pan; Colin S. Bill


Archive | 2002

On-chip repair of defective address of core flash memory cells

Colin S. Bill; Ken Cheong Cheah; Edward V. Bautista; Azrul Halim; Darlene G. Hamilton


Archive | 2002

Address sequencer within BIST (Built-in-Self-Test) system

Boon Tang Teh; Edward V. Bautista; Ken Cheong Cheah; Colin S. Bill; Joseph Kucera; Weng Fook Lee; Darlene G. Hamilton


Archive | 1998

Method for erasing flash electrically erasable programmable read-only memory (EEPROM)

Ravi P. Gutala; Jonathan Su; Colin S. Bill

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Jonathan Su

Advanced Micro Devices

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Feng Pan

Advanced Micro Devices

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Azrul Halim

Advanced Micro Devices

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Zhida Lan

Advanced Micro Devices

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