D. M. Feldmann

Temperature-dependent leakage mechanisms of Pt∕BiFeO3∕SrRuO3 thin film capacitors

Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. A Pt/BFO/SRO capacitor was constructed by depositing a top Pt electrode. The leakage current density versus. electric field characteristics were investigated from 80to350K. It was found that the leakage mechanisms were a strong function of temperature and voltage polarity. At temperatures between 80 and 150K, space-charge-limited current was the dominant leakage mechanism for both negative and positive biases. On the other hand, at temperatures between 200 and 350K the dominant leakage mechanisms were Poole-Frenkle emission and Fowler-Nordheim tunneling for negative and positive biases, respectively.

Rectifying current-voltage characteristics of BiFeO3∕Nb-doped SrTiO3 heterojunction

Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on (001) Nb-doped SrTiO3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p-type semiconductor and formed a p-n heterojunction with an n-type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5×104. Reverse C-V characteristics exhibited a linear 1∕C2 versus V plot, from which a built-in potential of 0.6V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.

Improved flux pinning in YBa2Cu3O7 with nanorods of the double perovskite Ba2YNbO6

We report significantly enhanced critical current densities (Jc) and flux pinning forces (Fp) in applied magnetic fields for YBa2Cu3O7 (YBCO) films with embedded Ba2YNbO6 (BYNO) nanorods. The films were grown by pulsed laser deposition with a target consisting of YBa2Cu3Oy with five molar per cent additions of BaNbOy and Y2O3. With this composition, deposited films were found to contain a high density of BYNO nanorods that frequently traversed the entire thickness of the film (up to 1? ?m), depending upon the deposition conditions. Enhanced Jc performance occurs primarily for applied field orientations near the c-axis of the YBCO, which is nominally along the growth direction of the BYNO nanorods. The threading nanorod density of one film of the present work was measured by plan-view transmission electron microscopy to be 710?850 nanorods??m ? 2. For approximately 1??m thick films, typical Jc(75.6?K, sf) and values were ~ 4.5?MA?cm ? 2 and 1.3?1.5?MA?cm ? 2, respectively. For a 0.5??m thick film, was achieved, and values of Fp in excess of 30 and 120?GN?m ? 3 were achieved at 75.5?K and 65?K, respectively.

Structural and dielectric properties of epitaxial Sm2O3 thin films

Epitaxial Sm2O3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition. The structural and dielectric properties were investigated. Microstructural studies by x-ray diffraction and transmission electron microscopy showed that the Sm2O3 thin films have a cubic structure and an epitaxial relationship of (004)Sm2O3∥(002)SrTiO3 and [440]Sm2O3∥[200]SrTiO3. A high dielectric constant of 30.5 was found, which can be attributed to the cubic structure and the high crystalline quality and shows a potential application of epitaxial Sm2O3 thin film for high-k material.

1000 A cm − 1 in a 2 µm thick YBa2Cu3O7 − x film with BaZrO3 and Y2O3 additions

We report here on significant improvements to the in-field and self-field critical current densities (Jc) of multilayer and single-layer YBa2Cu3O7 − x (YBCO) thick films with BaZrO3 (BZO) and Y2O3 additions. In the former case, the composite film consisted of a five-layer architecture with three YBCO layers and two Y2O3 interlayers in a total thickness of 1.8 µm. The multilayer film produced a Jc (75.6 K, self-field) of 4.3 MA cm − 2 (775 A cm − 1) and a minimum Jc (75.6 K, 1 T) of 1.0 MA cm − 2 (175 A cm − 1) over all field orientations in the maximum Lorentz force configuration. We achieved in a single-layer 2.0 µm thick film a Jc (75.6 K, self-field) of 5.2 MA cm − 2 (1010 A/cm-w) and a minimum Jc (75.6 K, 1 T) of 1.2 MA cm − 2 (234 A/cm-w) in the same measurement configuration. For both kinds of films, scanning transmission electron microscopy and transmission electron microscopy imaging were used to identify a uniformly dispersed second-phase microstructure consisting of short, tilted BZO nanorods and tilted Y2O3 nanoparticle layers. We attribute the enhanced performance of the thick YBCO films to the uniformity of the microstructure and the interaction of two different second-phase materials during film growth.

Leakage mechanisms of self-assembled (BiFeO3)0.5:(Sm2O3)0.5 nanocomposite films

Nanocomposite (BiFeO3)0.5:(Sm2O3)0.5 films were deposited on (001) oriented Nb-doped SrTiO3 substrates by pulsed laser deposition. The leakage current density versus electric field characteristics were investigated and compared with those of as-deposited and annealed pure BiFeO3 (BFO) thin films. The dominant leakage mechanisms of nanocomposite films were space-charge-limited current and Poole–Frenkle emission for positive and negative biases, respectively. The leakage current density of nanocomposite films was reduced three orders of magnitude in comparison with the as-deposited pure BFO films. The less oxygen vacancies in the BFO phase in the nanocomposite is believed to contribute to the leakage reduction.

Influence of growth temperature on critical current and magnetic flux pinning structures in YBa2Cu3O7−x

We have studied the critical current density (Jc) as a function of applied magnetic field (H) magnitude and orientation for ∼1-μm-thick YBa2Cu3O7−x films grown by pulsed laser deposition at growth temperatures (Tg) from 730to870°C. With changing Tg, alternately a high density of planar defects (YBa2Cu4Ox intergrowths) or columnar defects (Y–Cu–O nanocolumns) are introduced. These defects produce a maximum for Jc(H∼1T) parallel to the plane of the film or the film normal, respectively. For Tg⩾830°C, we present evidence of a Ba–Cu–O liquid phase during growth, which results in a dramatic change in both the microstructure of the films and magnetic field orientation dependence of Jc.

Epitaxial Ternary Nitride Thin Films Prepared by a Chemical Solution Method

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

Self-assembled multilayers and enhanced superconductivity in (YBa2Cu3O7−x)0.5:(BaZrO3)0.5 nanocomposite films

Nanocomposite (YBa2Cu3O7−x)0.5:(BaZrO3)0.5 thin films were fabricated on (001) oriented SrTiO3 substrates by pulsed laser deposition using a single uniformly mixed target. Both x-ray diffraction and transmission electron microscopy revealed remarkable, spontaneous formation of YBa2Cu3O7−x (YBCO) and BaZrO3 (BZO) multilayers. The high integrity and continuity of the multilayer made it possible to achieve a critical temperature of 88 K, given that the BaZrO3 fraction in the films is 50 mol %. The unique self-assembled microstructure led to a surprising field dependent critical current density along the ab plane.

Suppression of vortex channeling in meandered YBa2Cu3O7−δ grain boundaries

We report on the in-plane magnetic field (H) dependence of the critical current density (Jc) in meandered and planar single grain boundaries (GBs) isolated in YBa2Cu3O7−δ (YBCO) coated conductors. The meandered boundaries resulted from metal-organic deposition, and the planar boundaries resulted from physical vapor deposition. The Jc(H) properties of the planar GB are consistent with those previously seen in single GBs of YBCO films grown on SrTiO3 bicrystals. In the straight boundary, a characteristic flux channeling regime when H is oriented near the GB plane, associated with a reduced Jc, is seen. The meandered GB does not show vortex channeling since it is not possible for a sufficient length of vortex line to lie within it.