D. M. Zajac

Resonantly driven CNOT gate for electron spins

Building an essential quantum component To build a universal quantum computer—the kind that can handle any computational task you throw at it—an essential early step is to demonstrate the so-called CNOT gate, which acts on two qubits. Zajac et al. built an efficient CNOT gate by using electron spin qubits in silicon quantum dots, an implementation that is especially appealing because of its compatibility with existing semiconductor-based electronics (see the Perspective by Schreiber and Bluhm). To showcase the potential, the authors used the gate to create an entangled quantum state called the Bell state. Science, this issue p. 439; see also p. 393 A two-qubit gate essential for quantum computing is demonstrated in silicon quantum dots. Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon.Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. While high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been a major challenge due to rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly-driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities >99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 ns. We use the CNOT gate to generate a Bell state with 75% fidelity, limited by quantum state readout. Our quantum dot device architecture opens the door to multi-qubit algorithms in silicon.

Strong coupling of a single electron in silicon to a microwave photon

Inducing strong coupling Quantum dots, or artificial atoms, are being pursued as prospective building blocks for quantum information processing architectures. Communication with other, distant quantum dots requires strong coupling between photons and the electronic states of the dots. Mi et al. used double quantum dots defined in silicon and embedded in a superconducting cavity to achieve such coupling. This demonstration in an industry-relevant material bodes well for the large-scale development of semiconductor-based quantum processors. Science, this issue p. 156 Strong coupling can be achieved between a microwave cavity photon and a single electron in a silicon quantum dot. Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

Scalable Gate Architecture for a One-Dimensional Array of Semiconductor Spin Qubits

Long coherence times render electron spins in quantum dots promising for scaled-up quantum computation, but large arrays of semiconductor spin qubits have yet to be realized. The authors take the next steps in scaling by demonstrating an array of

A coherent spin-photon interface in silicon

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A reconfigurable gate architecture for Si/SiGe quantum dots

quantum dots with low electron occupancy, reproducible single-dot characteristics, and full charge-state readout. Beyond quantum information science, this also represents a major advance for the quantum-dot community, where double and triple quantum dots have been the standard for over a decade.

Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures

Electron spins in silicon quantum dots are attractive systems for quantum computing owing to their long coherence times and the promise of rapid scaling of the number of dots in a system using semiconductor fabrication techniques. Although nearest-neighbour exchange coupling of two spins has been demonstrated, the interaction of spins via microwave-frequency photons could enable long-distance spin–spin coupling and connections between arbitrary pairs of qubits (‘all-to-all’ connectivity) in a spin-based quantum processor. Realizing coherent spin–photon coupling is challenging because of the small magnetic-dipole moment of a single spin, which limits magnetic-dipole coupling rates to less than 1 kilohertz. Here we demonstrate strong coupling between a single spin in silicon and a single microwave-frequency photon, with spin–photon coupling rates of more than 10 megahertz. The mechanism that enables the coherent spin–photon interactions is based on spin–charge hybridization in the presence of a magnetic-field gradient. In addition to spin–photon coupling, we demonstrate coherent control and dispersive readout of a single spin. These results open up a direct path to entangling single spins using microwave-frequency photons.

Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

High-fidelity quantum gates in Si/SiGe double quantum dots

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials system. By analyzing data from 26 wafers with different heterostructure growth profiles we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest quality wafer supports a 2DEG with a mobility of 160,000 cm^2/Vs at a density 2.17 x 10^11/cm^2 and exhibits a metal-to-insulator transition at a critical density 0.46 x 10^11/cm^2. We extract a valley splitting of approximately 150 microeV at a magnetic field of 1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.

Spin Relaxation in Si/SiGe Quantum Dot Devices with Micromagnets

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g c / 2 π = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.