D. Roditchev

Nanometer scale mapping of the density of states in an inhomogeneous superconductor

Using high-speed scanning tunneling spectroscopy (STS), we perform a full mapping of the quasiparticle density of states (DOS) in single crystals of Bi2 − xPbxSr2CaCu208 + δ. The measurements carried out at 5 K showed a complex spatial pattern of important variations of the local DOS on the nanometer scale. Superconducting areas, characterized by a well-pronounced superconducting gap, are coexisting with regions of a peakless gap structure which we attribute to the pseudogap. Within the large superconducting regions, the spectra reveal strong peak/dip/hump signatures, identical to the pristine Bi2Sr2CaCu208 + δ case. On the contrary, in very small superconducting regions this fine structure is attenuated. Such a behavior of the local DOS suggests that the peak/dip/hump fine structure is not only a consequence of the superconducting state, but is also directly related to the scale of the phase coherence. The role of Bi-Pb substitutional disorder is discussed.

Electric‐Pulse‐driven Electronic Phase Separation, Insulator–Metal Transition, and Possible Superconductivity in a Mott Insulator

Experimental evidence of a nonvolatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4 Se8 is reported. Scanning tunneling microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer-scale electronic phase separation generated in the bulk material.HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator C. Vaju, Laurent Cario, Benoît Corraze, Etienne Janod, Vincent Dubost, Tristan Cren, D. Roditchev, D. Braithwaite, Olivier Chauvet

Scanning tunneling spectroscopy on the novel superconductor CaC6.

We present scanning tunneling microscopy and spectroscopy of the newly discovered superconductor CaC6. The tunneling conductance spectra, measured between 3 and 15 K, show a clear superconducting gap in the quasiparticle density of states. The gap function extracted from the spectra is in good agreement with the conventional BCS theory with Delta0=1.6+/-0.2 meV. The possibility of gap anisotropy and two-gap superconductivity is also discussed. In a magnetic field, direct imaging of the vortices allows us to deduce a coherence length in the ab plane xiab approximately 33 nm.

Strong coupling and double-gap density of states in superconducting MgB2

Using scanning tunneling spectroscopy at T = 4.2 K, we perform simultaneously the topographic imaging and the quasiparticle density of states (DOS) mapping in granular MgB2. We observe a new type of spectrum, showing a pronounced double gap, with the magnitudes of ΔS = 3.9 meV and ΔL = 7.5 meV, i.e. well below and well above the BCS limit. The largest gap value gives the ratio 2ΔL/kBTC = 4.5, which implies strong electron-phonon coupling. Other superconducting regions are found to have a characteristic BCS-shaped DOS. However, the variation of the spectral shape and lower gap widths, from 2.0 meV to 6.5 meV, indicate the importance of surface inhomogeneity and proximity effects in previously published tunneling data. Our finding gives no evidence for any important gap anisotropy. Instead, it strongly supports the multiple-gap scenario in MgB2 in the clean limit, and the single-gap scenario in the dirty limit.

Resistive switching induced by electronic avalanche breakdown in GaTa

Mott transitions induced by strong electric fields are receiving growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators. However, experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow-gap Mott insulators GaTa4Se(8-x)Te(x). We find that the I-V characteristics and the magnitude of the threshold electric field (Eth) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. Eth increases as a power law of the Mott-Hubbard gap (Eg), in surprising agreement with the universal law Eth is proportional to Eg(2.5) reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude greater than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains that grow to form filamentary paths across the sample.Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa

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Se

Se

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_{8-x}

Te

Te

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