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Dive into the research topics where D.W. Ding is active.

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Featured researches published by D.W. Ding.


Journal of Applied Physics | 2001

Thermal redistribution of photocarriers between bimodal quantum dots

Y. Zhang; Changbao Huang; F. Q. Liu; B. Xu; J. Wu; Y. H. Chen; D.W. Ding; Wenhan Jiang; Xiaoling Ye; Z.G. Wang

We study the photoluminescence (PL) properties of InAs/GaAs self-assembled quantum dots (QDs) by varying excitation power and temperature. Excitation power-dependent PL shows that there exists bimodal size distribution in the QD ensemble. Thermal carrier redistribution between the two branches of dots is observed and investigated in terms of the temperature dependence of their relative PL intensity. Based on a model in which carrier transfer between dots is facilitated by the wetting layer, the experimental results are well explained


Applied Physics Letters | 2014

Superhydrophobic metallic glass surface with superior mechanical stability and corrosion resistance

Jiashuai Ma; Xijian Zhang; D. P. Wang; D. Q. Zhao; D.W. Ding; Kesong Liu; W. Wang

Superhydrophobic surface with mechanical stability and corrosion resistance is long expected due to its practical applications. We show that a micro-nano scale hierarchical structured Pd-based metallic glass surface with superhydrophobic effect can be prepared by the thermoplastic forming, which is a unique and facile synthesis strategy for metallic glasses. The superhydrophobic metallic glass surface without modification of low surface energy chemical layer also exhibits superior mechanical stability and corrosion resistance compared with conventional superhydrophobic materials. Our results indicate that the metallic glass is a promising candidate superhydrophobic material for applications.


Journal of Applied Physics | 2000

Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1−xAs (0⩽x⩽0.3)

Honglin Liu; Xuejuan Wang; J. Wu; B. Xu; Yunrong Wei; Wenhan Jiang; D.W. Ding; Xiaoling Ye; Fucheng Lin; Junji Zhang; J. B. Liang; Z.G. Wang

Optical and structural investigations of InAs quantum dots (QDs) covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) overgrowth layer have been systematically reported. The decrease of strain in the growth direction of InAs quantum dots covered by InGaAs layer instead of GaAs is demonstrated by transmission electron microscopy experiments. In addition, the atomic force microscopy measurement shows that the surface of InAs islands with 3-nm-thick In0.2Ga0.8As becomes flatter. However, the InGaAs islands nucleate on the top of quantum dots during the process of InAs islands covered with In0.3Ga0.7As. The significant redshift of the photoluminescence peak energy and reduction of photoluminescence linewidth of InAs quantum dots covered by InGaAs are observed. The energy gap change of InAs QDs covered by InGaAs could be explained in terms of reducing strain, suppressing compositional mixing, and increasing island height


Journal of Applied Physics | 2013

Structural perspectives on the elastic and mechanical properties of metallic glasses

D. P. Wang; Zhaojie Zhu; Rongjian Xue; D.W. Ding; H. Y. Bai; W. Wang

The flow units of glasses are generally perceived to be a local rearrangement of atoms that are microstructural origin for plastic deformation and relaxations in metallic glasses. We find a relationship of the effective concentration of flow units and some properties such as elastic moduli, micro-hardness and plasticity of metallic glasses. The relationship helps in understanding the softening phenomenon, structural heterogeneous, evolution process of flow units, and widespread mechanical behavior of metallic glasses and can reveal the essential structural mechanism of the Poissons ratio criterion for plasticity in metallic glasses. The relationship also indicates that the flow unit is a key structural parameter for understanding and controlling the properties and the performance of metallic glasses.


Journal of Applied Physics | 2000

Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots

Huiyun Liu; B. Xu; Yongle Chen; D.W. Ding; Z. G. Wang

The size and shape evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0 ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9 ML deposition on GaAs(100) substrate. Based on comparisons with the formation of large incoherent InAs islands on single-layer samples at late growth stage, the larger coherent InAs quantum dots at 2.9 ML deposition has been observed on the second InAs layer. A simple model analysis accounting for the surface strain distribution influenced by buried islands gives a stronger increment of critical QD diameter for dislocation nucleation on the second layer in comparison with the single-layer samples. Additionally, the inhibition of dislocation nucleation in InGaAs/GaAs large islands can also be explained by our theoretical results


Journal of Applied Physics | 2013

Characterization of flow units in metallic glass through density variation

Rongjian Xue; D. P. Wang; Zhengwang Zhu; D.W. Ding; Bo Zhang; W. Wang

The evolution of flow units associated with the flow “defects” in metallic glass is characterized by monitoring the metallic glassy density change upon isothermal annealing far below their glass transition temperature. A meaningful function for the density variation with the concentration of flow units is obtained for the metallic glasses. We show that the correlation between the density variation and the flow unit have implications for understanding the fragility, structural heterogeneous, and structural relaxation behaviors in metallic glasses.


Journal of Applied Physics | 2000

Anomalous temperature dependence of photoluminescence from InAs quantum dots

Wenhan Jiang; Xiaoling Ye; B. Xu; Huaizhe Xu; D.W. Ding; J. B. Liang; Z.G. Wang

Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well


Journal of Crystal Growth | 2000

Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

Y. Zhang; Chenghui Huang; F. Q. Liu; B. Xu; D.W. Ding; Wenhan Jiang; Y. Li; Xiaoling Ye; J. Wu; Youhu Chen; Z. G. Wang

In this work we report the photoluminescence (PL) and interband absorption study of Si-modulation-doped multilayer InAs/GaAs quantum dots grown by molecular beam epitaxy (MBE) on (100) oriented GaAs substrates. Low-temperature PL shows a distinctive double-peak feature. Power-dependent PL and transmission electron microscopy (TEM) confirm that they stem from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (QDs). The temperature-dependent PL and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of QDs of different sizes in the ensemble


Applied Physics Letters | 2000

Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A

Huiyun Liu; Wenlong Zhou; D.W. Ding; Wenhan Jiang; B. Xu; J. B. Liang; Z. G. Wang

Self-organized In0.55Al0.45As/Al0.50Ga0.50As quantum dots are grown by the Stranski-Krastanow growth mode using molecular beam epitaxy on the GaAs(311)A substrate. The optical properties of type-II InAlAs/AlGaAs quantum dots have been demonstrated by the excitation power and temperature dependence of photoluminescence spectra. A simple model accounting for the size-dependent band gap of quantum dots is given to qualitatively understand the formation of type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots driven by the quantum-confinement-induced Gamma --> X transition. The results provide new insights into the band structure of InAlAs/AlGaAs quantum dots


Journal of Applied Physics | 2014

Understanding the correlations between Poisson's ratio and plasticity based on microscopic flow units in metallic glasses

D. P. Wang; D. Q. Zhao; D.W. Ding; H. Y. Bai; W. Wang

In metallic glasses (MGs), a clear correlation has been established between plasticity and the Poissons ratio. Such a correlation between the two distinctive macroscopic mechanical properties is challenging to explain from a microstructure perspective. We studied the microstructural origin of the Poissons ratio and plasticity criterion in various MGs and find a correlation between the relative concentration of flow units and Poissons ratio: the MGs with higher concentration of flow units show a larger Poissons ratio and better plasticity. We have explained the empirical correlation between ductility and the Poissons ratio based on microscopic flow units in MGs.

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B. Xu

Chinese Academy of Sciences

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H. Y. Bai

Chinese Academy of Sciences

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W. Wang

Chinese Academy of Sciences

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Xiaoling Ye

Chinese Academy of Sciences

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A.H. Cai

Hunan Institute of Science and Technology

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G.J. Zhou

Hunan Institute of Science and Technology

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Yun Luo

Hunan Institute of Science and Technology

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D. Q. Zhao

Chinese Academy of Sciences

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Wenhan Jiang

Chinese Academy of Sciences

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Z. G. Wang

Chinese Academy of Sciences

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