Dachuan Jiang

Redistribution of iron during directional solidification of metallurgical-grade silicon at low growth rate

Redistribution of iron during directional solidification of metallurgical-grade silicon (MG-Si) was conducted at low growth rate. Concentrations of iron were examined by ICP-MS and figured in solid and liquid phases, at grain boundary and in growth direction. Concentrations are significantly different between solid and liquid phases. The thickness of the solute boundary layer is about 4 mm verified by mass balance law, and the effective distribution coefficient is 2.98×10−4. Iron element easily segregates at grain boundary at low growth rate. In growth direction, concentrations are almost constant until 86% ingot height, and they do not meet the Scheil equation completely, which is caused by the low growth rate. The effect of convection on the redistribution of iron was discussed in detail. Especially, the “dead zone” of convection plays an important role in the iron redistribution.

Evaluation on electrical resistivity of silicon materials after electron beam melting

This research deals with the study of electron beam melting (EBM) methodology utilized in melting silicon material and subsequently discusses on the effect of oxygen level on electrical resistivity change after EBM process. The oxygen content was reduced from 6.177 to less than 0.0517 ppmw when refining time exceeded 10 min with removal efficiency of more than 99.08%. The average value of electrical resistivity of silicon before EBM processing was recorded to be 2.25 Ω cm but with the increase in melting time that was applied through EBM, the electrical resistivity was recorded to go high in the range of 4–13 Ω cm for different regions. The electrical resistivity values were greater in the top and the bottom regions, whereas lowest in the central region at all conditions of melting time. It is the result of the evaporation of oxygen during melting process and the segregation of metal impurities during solidification.

Improvement of Solar Cell Performance After Oxygen Removal by Electron Beam Melting

Two 450 kg multicrystalline silicon ingots were obtained by mixing and melting high purity silicon and silicon from the edges and the bottom of the casted ingots together in a casting furnace. For one of the ingot, the silicon from casted ingots was refined in an electron beam melting furnace to remove oxygen. The oxygen content was reduced from 10 to less than 0.0517 ppmw when silicon was refined at 500 kW with removal efficiency up to 99.429% in the most areas. The life time of the ingot after oxygen removal was measured to be far better than another one, whereas in the central parts the value was almost 6.7 µs. The efficiencies of both solar cells were initially 17.55% but after 4 h decreased to 17.05% and 15.55%, respectively. The solar cell after oxygen removal shows a better performance in degradation.

Removal of SiC from Silicon After Electron Beam Melting Technique on Industrial Scale

Carbon and their compounds were removed successfully through electron beam melting (EBM), so that those areas (contaminated with carbon) of ingot were recycled and reused. During EBM process, the numerical simulation results show that there is great temperature gradient existing in the melt. During EBM, the melt near copper crucible shows low temperature and bad fluidity. Carbon in silicon melt flows, precipitated and gathered in this area so that it is separated. The flow mechanism of SiC in silicon melt was investigated. After EBM, carbon enriches in the form of SiC at the bottom of the ingot but not in the center. This technology is applied on industrial scale EBM equipment. The results show that a majority of SiC was deposited in the bottom of the refining crucible and the carbon contaminations are not found in the most of the area of the solidified ingot in crucible.

Boron removal from silicon by slag refining using Na2O-SiO2 in industrial applications

ABSTRACT Boron (B) removal by slag refining using Na2O-SiO2 was investigated in industrial applications. The experimental results showed that the reasonable ratio range of slag to silicon is about 0.7–0.8; the suitable holding time is about 30 min; the concentration of B is reduced from 1.90 ppmw to 0.17 ppmw by three times slag refining; and the removal efficiency of B reaches 91.1%. Moreover, it is discussed that B in silicon is more inclined to be oxidized by Na2O than SiO2 according to thermodynamic analysis and then volatilized to the atmosphere in the form of Na2B2O4 according to kinetic analysis.

Effect of electron beam injection on boron redistribution in silicon and oxide layer

Abstract The behavior of boron redistribution in silicon with and without oxide layer after electron beam injection (EBI) was investigated. Special defect shapes were generated on the surface of bare and oxidized silicon wafers. Secondary ion mass spectrometer was used to measure the boron profile. The results showed that after long EBI time, boron tended to be induced from both sides of the transition region between the oxide layer and silicon. For the sample without oxide layer after EBI, boron tended to diffuse towards the surface and its concentration obviously reduced inside the silicon. The results of the study show the potential use of the process in removing boron impurity in silicon.

Segregation and evaporation behaviors of aluminum and calcium in silicon during solidification process induced by electron beam

An experimental investigation into the removal of aluminum (Al) and calcium (Ca) from molten silicon by using electron beam melting was carried out. Based on the distributions of Al and Ca along the growth direction of the ingot under different solidification conditions, the influence of segregation and evaporation behaviors on the removal of such impurities with both high saturated vapor pressure and low segregation coefficients was investigated. The results showed that the distributions of impurities depend upon the interaction between segregation and evaporation, so that the removal efficiency can be further improved by adjusting the melting parameters. Compared with the traditional electron beam melting process, the energy consumption decreases by 20% during the whole melting and solidification process. It is considered to be a more effective way for the purification of silicon and the reduction of energy consumption by electron beam melting.