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Dive into the research topics where Dae-jin Kwon is active.

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Featured researches published by Dae-jin Kwon.


symposium on vlsi technology | 2004

High quality high-k MIM capacitor by Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/ multi-layered dielectric and NH/sub 3/ plasma interface treatments for mixed-signal/RF applications

Yong-kuk Jeong; Seok-jun Won; Dae-jin Kwon; Min-Woo Song; Weon-Hong Kim; Moon-han Park; Joo-hyun Jeong; Hansu Oh; Ho-Kyu Kang; Kwang-Pyuk Suh

Novel high-k MIM capacitor technology for mixed-signal/RF applications has been successfully developed by introducing multilayered high-k dielectric(Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/) and NH/sub 3/ plasma electrode-dielectric interfaces treatments. For the first time, we have simultaneously achieved high capacitance of 4fF/um/sup 2/ and low leakage current of 100nA/cm/sup 2/ at high temperature of 125/spl deg/C with ultra low VCC(a=16.9ppm/V/sup 2/, b=5.2ppm/V) and high Q(/spl sim/107 at 2.4GHz and 5.4pF).


symposium on vlsi technology | 2003

Novel plasma enhanced atomic layer deposition technology for high-k capacitor with EOT of 8 /spl Aring/ on conventional metal electrode

Seok-jun Won; Yong-kuk Jeong; Dae-jin Kwon; Moon-han Park; Ho-Kyu Kang; Kwang-Pyuk Suh; Hong-ki Kim; Jae-Hwan Ka; Kwan-Young Yun; Duck-Hyung Lee; Dae-youn Kim; Yong-Min Yoo; Choon-Soo Lee

We have developed a plasma enhanced atomic layer deposition(PEALD) technology for high-k dielectrics such as Al/sub 2/O/sub 3/,Ta/sub 2/O/sub 5/ and HfO/sub 2/. Film quality and throughput of PEALD are far superior to that of ALD which has been spotlighted as a deposition technology for next generation semiconductor devices. We have obtained a extremely low equivalent oxide thickness(EOT) of 8 /spl Aring/ from HfO/sub 2/ film, which has not been reported in conventional metal-based memory capacitors up to now. It was confirmed that PEALD-Al/sub 2/O/sub 3/ and Ta/sub 2/O/sub 5/ films are superior to those using any other deposition techniques and very useful as System-on-Chip(SoC) capacitors.


Archive | 2004

Method of forming thin film using atomic layer deposition

Seok-Jun Won; Yong-kuk Jeong; Dae-jin Kwon


Archive | 2001

Method for manufacturing capacitor of semiconductor device

Seok-jun Won; Myong-Geun Yoon; Yong-kuk Jeong; Dae-jin Kwon


Archive | 2003

Capacitor of semiconductor device and method for manufacturing the same

Seok-jun Won; Myong-Geun Yoon; Yong-kuk Jeong; Dae-jin Kwon


Archive | 2004

Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same

Seok-jun Won; Yong-kuk Jeong; Dae-jin Kwon; Min-Woo Song; Weon-Hong Kim


Archive | 2005

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

Yong-kuk Jeong; Jung-Hyoung Lee; Seok-jun Won; Dae-jin Kwon; Weon-Hong Kim; Min-Woo Song


Archive | 2005

Semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the same

Yong-kuk Jeong; Seok-Jun Won; Dae-jin Kwon; Min-Woo Song; Weon-Hong Kim


Archive | 2004

Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same

Yong-kuk Jeong; Seok-jun Won; Dae-jin Kwon; Weon-Hong Kim


Archive | 2012

APPARATUS INCLUDING 4-WAY VALVE FOR FABRICATING SEMICONDUCTOR DEVICE, METHOD OF CONTROLLING VALVE, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE APPARATUS

Seok-jun Won; Yong-Min Yoo; Dae-youn Kim; Young Hoon Kim; Dae-jin Kwon; Weon-Hong Kim

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