Dae-jin Kwon

High quality high-k MIM capacitor by Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/ multi-layered dielectric and NH/sub 3/ plasma interface treatments for mixed-signal/RF applications

Novel high-k MIM capacitor technology for mixed-signal/RF applications has been successfully developed by introducing multilayered high-k dielectric(Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/) and NH/sub 3/ plasma electrode-dielectric interfaces treatments. For the first time, we have simultaneously achieved high capacitance of 4fF/um/sup 2/ and low leakage current of 100nA/cm/sup 2/ at high temperature of 125/spl deg/C with ultra low VCC(a=16.9ppm/V/sup 2/, b=5.2ppm/V) and high Q(/spl sim/107 at 2.4GHz and 5.4pF).

Novel plasma enhanced atomic layer deposition technology for high-k capacitor with EOT of 8 /spl Aring/ on conventional metal electrode

We have developed a plasma enhanced atomic layer deposition(PEALD) technology for high-k dielectrics such as Al/sub 2/O/sub 3/,Ta/sub 2/O/sub 5/ and HfO/sub 2/. Film quality and throughput of PEALD are far superior to that of ALD which has been spotlighted as a deposition technology for next generation semiconductor devices. We have obtained a extremely low equivalent oxide thickness(EOT) of 8 /spl Aring/ from HfO/sub 2/ film, which has not been reported in conventional metal-based memory capacitors up to now. It was confirmed that PEALD-Al/sub 2/O/sub 3/ and Ta/sub 2/O/sub 5/ films are superior to those using any other deposition techniques and very useful as System-on-Chip(SoC) capacitors.