Dandan Guan

Epitaxial growth of two-dimensional stanene

Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and mechanical exfoliation. However, the synthesis of Sn-based stanene has proved challenging so far. Here, we report the successful fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characterization using scanning tunnelling microscopy and angle-resolved photoemission spectroscopy, in combination with first-principles calculations. The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect.

Experimental Detection of a Majorana Mode in the core of a Magnetic Vortex inside a Topological Insulator-Superconductor Bi 2 Te 3 / NbSe 2 Heterostructure

Majorana fermions have been intensively studied in recent years for their importance to both fundamental science and potential applications in topological quantum computing1,2. Majorana fermions are predicted to exist in a vortex core of superconducting topological insulators3. However, they are extremely difficult to be distinguished experimentally from other quasiparticle states for the tiny energy difference between Majorana fermions and these states, which is beyond the energy resolution of most available techniques. Here, we overcome the problem by systematically investigating the spatial profile of the Majorana mode and the bound quasiparticle states within a vortex in Bi2Te3/NbSe2. While the zero bias peak in local conductance splits right off the vortex center in conventional superconductors, it splits off at a finite distance ~20nm away from the vortex center in Bi2Te3/NbSe2, primarily due to the Majorana fermion zero mode. While the Majorana mode is destroyed by reducing the distance between vortices, the zero bias peak splits as a conventional superconductor again. This work provides strong evidences of Majorana fermions and also suggests a possible route to manipulating them.

Majorana Zero Mode Detected with Spin Selective Andreev Reflection in the Vortex of a Topological Superconductor.

Recently, theory has predicted a Majorana zero mode (MZM) to induce spin selective Andreev reflection (SSAR), a novel magnetic property which can be used to detect the MZM. Here, spin-polarized scanning tunneling microscopy or spectroscopy has been applied to probe SSAR of MZMs in a topological superconductor of the Bi_{2}Te_{3}/NbSe_{2} heterostructure. The zero-bias peak of the tunneling differential conductance at the vortex center is observed substantially higher when the tip polarization and the external magnetic field are parallel rather than antiparallel to each other. This spin dependent tunneling effect provides direct evidence of MZM and reveals its magnetic property in addition to the zero energy modes. Our work will stimulate MZM research on these novel physical properties and, hence, is a step towards experimental study of their statistics and application in quantum computing.

Electronic structure of black phosphorus studied by angle-resolved photoemission spectroscopy

Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside the kz-dispersive bulk bands, resonant surface state is also observed in the momentum space. Our finds strongly suggest that more details need to be considered to fully understand the electronic properties of black phosphorus theoretically.

Stability of theBi2Se3(111) topological state: Electron-phonon and electron-defect scattering

The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda=0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra and this cannot merely be attributed to surface defect-induced momentum broadening.

Electron–phonon coupling in quasi-free-standing graphene

Quasi-free-standing monolayer graphene can be produced by intercalating species like oxygen or hydrogen between epitaxial graphene and the substrate crystal. If the graphene was indeed decoupled from the substrate, one would expect the observation of a similar electronic dispersion and many-body effects, irrespective of the substrate and the material used to achieve the decoupling. Here we investigate the electron-phonon coupling in two different types of quasi-free-standing monolayer graphene: decoupled from SiC via hydrogen intercalation and decoupled from Ir via oxygen intercalation. The two systems show similar overall behaviours of the self-energy and a weak renormalization of the bands near the Fermi energy. The electron-phonon coupling is found to be so weak that it renders the precise determination of the coupling constant λ through renormalization difficult. The estimated value of λ is 0.05(3) for both systems.

Phase Separation and Bulk p‐n Transition in Single Crystals of Bi2Te2Se Topological Insulator

Bismuth chalcogenide (Bi 2 Ch 3 ) alloys are among the most extensively studied and commonly used thermoelectric materials. [ 1 ] They are also currently of great interest in condensedmatter physics as prototypical three-dimensional topological insulators (TIs), due to the existence of stable and topologically protected Dirac like states on the surface. [ 2 , 3 ] Shubnikov– de Haas and weak-fi eld Hall anomalies show a substantially enhanced surface current and mobility of the surface states over bulk Bi 2 Te 3 values. [ 4 ] However, it is challenging to investigate the charge-transport characteristics of the surface states directly, as the charge transport is dominated by the bulk properties. [ 3–5 ] Most studies of TIs in the Bi 2 Ch 3 family have focused on binary Bi 2 Se 3 and Bi 2 Te 3 systems. Both compounds are semiconductors, but they display high bulk conductivities due to intrinsic defects. [ 4–6 ] A conversion from nto p-type conduction in Bi 2 Te 3 thin fi lms is observed when the growth condition changes. [ 5b ] Recently, the ternary compound Bi 2 Te 2 Se has been suggested to be the best material for studies of the surface transport due to its large bulk resistivity. [ 3 , 6–8 ] However, controlling the bulk conductivity is diffi cult, even for Bi 2 Te 2 Se, due to unintentional doping by crystal defects. [ 6 , 8 ] Here we show that the diffi culty of making high-quality Bi 2 Te 2 Se single crystals originates from the internal features of the specifi c solid-state composition and phase separation in Bi 2 Te 2 Se. Bi 2 Ch 3 has the tetradymite-type rhombohedral structure, which can be described by the R-3m space group. The lattice can be regarded as a hexagonal layered structure in which the layers stack in the sequence of Ch 1 -Bi-Ch 2 -Bi-Ch 1 , where Ch is Te or Se in the present study. Each unit cell consists of three of these fi velayer groups, which are connected by bonds with a high degree of van der Waals character between the Ch 1 -Ch 1 layers. Early phase-diagram studies showed that Bi 2 Te x Se y ( x + y = 3) compounds form continuous solid solutions at temperatures above 500 ° C; however, the crystal structures tend to be ordered at

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor.

The electronic structure of clean and adsorbate-covered Bi2Se3: an angle-resolved photoemission study

Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the topological surface state in the bulk band gap. As time passes, the Dirac point moves to higher binding energies, indicating an increasingly strong downward bending of the bands near the surface. This time-dependent band bending is related to a contamination of the surface and can be accelerated by intentionally exposing the surface to carbon monoxide and other species. For a sufficiently strong band bending, additional states appear at the Fermi level. These are interpreted as quantised conduction band states. For large band bendings, these states are found to undergo a strong Rashba splitting. The formation of quantum well states is also observed for the valence band states. Different interpretations of similar data are also discussed.

High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended graphen. When supported on a surface, graphene shows a strongly reduced mobility, and an especially severe reduction for temperatures above 200 K. A temperature-dependent mobility reduction could be explained by scattering of carriers with phonons, but this is expected to be weak for pristine, weakly-doped graphene. The mobility reduction has therefore been ascribed to the interaction with confined ripples or substrate phonons. Here we study the temperature-dependent electronic structure of supported graphene by angle-resolved photoemission spectroscopy, a technique that can reveal the origin of the phenomena observed in transport measurements. We show that the electron-phonon coupling for weakly-doped, supported graphene on a metal surface is indeed extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier type and density that is relevant for transport. Using ab initio molecular dynamics simulations, we show that these changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.