Meng-Yu Yao

The Coexistence of Superconductivity and Topological Order in the Bi2Se3 Thin Films

All Set for Majoranas When put in the proximity of a superconductor, topological insulators (TIs) are expected to support Majorana fermions, exotic particles that are their own antiparticles. For this to be realized, the interface between the TI and superconductor layers has to be atomically sharp but electronically transparent. Wang et al. (p. 52, published online 15 March) fabricated this heterostructure by growing a film of the TI material Bi2Se3 on the superconductor NbSe2 covered with a Bi bilayer. Scanning tunneling spectroscopy revealed a superconducting gap on the TI surface of the heterostructure with varying thickness of the Bi2Se3 film. This coexistence of superconductivity and topological order should now allow observation of exotic phenomena such as Majorana fermions. A thin layer of a topological insulator grown on the surface of a superconductor is shown to acquire a superconducting gap. Three-dimensional topological insulators (TIs) are characterized by their nontrivial surface states, in which electrons have their spin locked at a right angle to their momentum under the protection of time-reversal symmetry. The topologically ordered phase in TIs does not break any symmetry. The interplay between topological order and symmetry breaking, such as that observed in superconductivity, can lead to new quantum phenomena and devices. We fabricated a superconducting TI/superconductor heterostructure by growing dibismuth triselenide (Bi2Se3) thin films on superconductor niobium diselenide substrate. Using scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we observed the superconducting gap at the Bi2Se3 surface in the regime of Bi2Se3 film thickness where topological surface states form. This observation lays the groundwork for experimentally realizing Majorana fermions in condensed matter physics.

Electronic structure of black phosphorus studied by angle-resolved photoemission spectroscopy

Electronic structures of single crystalline black phosphorus were studied by state-of-art angleresolved photoemission spectroscopy. Through high resolution photon energy dependence measurements, the band dispersions along out-of-plane and in-plane directions are experimentally determined. The electrons were found to be more localized in the ab-plane than that is predicted in calculations. Beside the kz-dispersive bulk bands, resonant surface state is also observed in the momentum space. Our finds strongly suggest that more details need to be considered to fully understand the electronic properties of black phosphorus theoretically.

Large magnetic moment of gadolinium substituted topological insulator: Bi1.98Gd0.02Se3

The crystal structure, electronic, and magnetic properties of Gadolinium (Gd) substituted Bi2Se3—represented by Bi1.98Gd0.02Se3—were investigated systematically by scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and superconducting quantum interference device. Gd dopants with valence of 3+ were mainly found to substitute Bi atoms. Each Gd3+ ion has a magnetic moment as large as ∼6.9μB in the bulk paramagnetic state.

Anisotropic Topological Surface States on High‐Index Bi2Se3 Films

A high-index topological insulator thin film, Bi2 Se3 (221), is grown on a faceted InP(001) substrate by molecular-beam epitaxy (see model in figure (a)). Angle-resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.

Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3

Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied. Scanning tunneling microscopy shows that most of the Sr atoms are not in the van der Waals gap. After Sr doping, the Fermi level was found to move further upwards when compared with the parent compound Bi2Se3, which is consistent with the low carrier density in this system. The topological surface state was clearly observed, and the position of the Dirac point was determined in all doped samples. The surface state is well separated from the bulk conduction bands in the momentum space. The persistence of separated topological surface state combined with small Fermi energy makes this superconducting material a very promising candidate for the time reversal invariant topological superconductor.

Carriers dependence of the magnetic properties in magnetic topological insulator Sb1.95−xBixCr0.05Te3

Bulk carrier density and magnetic properties of Sb1.95−xBixCr0.05Te3 single crystals were studied. We found that the carrier density can be tuned by Bi substitution. Both the Curie temperature and magnetic moments are strongly related to the carrier density, which suggests the existence of intrinsic ferromagnetism in Cr-doped Sb2Te3 magnetic topological insulator that is very important for spin-related applications.

Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator

The electronic and magnetic properties of iron-doped topological insulator Bi1.84−xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07μB. Magnetic and non-magnetic phases separation was observed in all samples. Our results suggest that the bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and regardless of carrier density.

Fully gappeds-wave-like superconducting state and electronic structure in Ir0.95Pd0.05Te2single crystals with strong spin-orbital coupling

Due to the large spin-orbital coupling in the layered 5d-transition metal chalcogenides compound, the occurrence of superconductivity in Ir2-xPdxTe2 offers a good chance to search for possible topological superconducting states in this system. We did comprehensive studies on the superconducting properties and electronic structures of single crystalline Ir0.95Pd0.05Te2 samples. The superconducting gap size, critical fields and coherence length along different directions were experimentally determined. Macroscopic bulk measurements and microscopic low temperature scanning tunneling spectroscopy results suggest that Ir0.95Pd0.05Te2 possesses a BCS-like s-wave state. No sign of zero bias conductance peak were found in the vortex core at 0.4K.

Topologically nontrivial bismuth(111) thin films

Using high-resolution angle-resolved photoemission spectroscopy (ARPES), the topological property of the three-dimensional Bi(111) films grown on the Bi2Te3(111) substrate were studied. Very different from the bulk Bi, we found another surface band near the point besides the two well-known surface bands on the 30 nm films. With this new surface band, the bulk valence band and the bulk conduction band can be connected by the surface states in the Bi(111)/Bi2Te3 films. Our band mapping revealed odd number of Fermi crossings of the surface bands, which provided new experimental evidences that Bi(111)/Bi2Te3 films of a certain thickness can be topologically nontrivial in three dimension.