Daniel Chia Sheng Bien

Piezoresistive effects in controllable defective HFTCVD graphene-based flexible pressure sensor

In this work, the piezoresistive effects of defective graphene used on a flexible pressure sensor are demonstrated. The graphene used was deposited at substrate temperatures of 750, 850 and 1000 °C using the hot-filament thermal chemical vapor deposition method in which the resultant graphene had different defect densities. Incorporation of the graphene as the sensing materials in sensor device showed that a linear variation in the resistance change with the applied gas pressure was obtained in the range of 0 to 50 kPa. The deposition temperature of the graphene deposited on copper foil using this technique was shown to be capable of tuning the sensitivity of the flexible graphene-based pressure sensor. We found that the sensor performance is strongly dominated by the defect density in the graphene, where graphene with the highest defect density deposited at 750 °C exhibited an almost four-fold sensitivity as compared to that deposited at 1000 °C. This effect is believed to have been contributed by the scattering of charge carriers in the graphene networks through various forms such as from the defects in the graphene lattice itself, tunneling between graphene islands, and tunneling between defect-like structures.

Highly sensitive integrated pressure sensor with horizontally oriented carbon nanotube network

This paper presents a functionalized, horizontally oriented carbon nanotube network as a sensing element to enhance the sensitivity of a pressure sensor. The synthesis of horizontally oriented nanotubes from the AuFe catalyst and their deposition onto a mechanically flexible substrate via transfer printing are studied. Nanotube formation on thermally oxidized Si (100) substrates via plasma-enhanced chemical vapor deposition controls the nanotube coverage and orientation on the flexible substrate. These nanotubes can be simply transferred to the flexible substrate without changing their physical structure. When tested under a pressure range of 0 to 50 kPa, the performance of the fabricated pressure sensor reaches as high as approximately 1.68%/kPa, which indicates high sensitivity to a small change of pressure. Such sensitivity may be induced by the slight contact in isolated nanotubes. This nanotube formation, in turn, enhances the modification of the contact and tunneling distance of the nanotubes upon the deformation of the network. Therefore, the horizontally oriented carbon nanotube network has great potential as a sensing element for future transparent sensors.