Daniel Namishia
Cree Inc.
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Publication
Featured researches published by Daniel Namishia.
IEEE Electron Device Letters | 2011
Saptharishi Sriram; Alexander V. Suvorov; Jason Henning; Daniel Namishia; Helmut Hagleitner; Jeremy Fisher; Thomas Smith; Terry Alcorn; William T. Pulz
We demonstrate for the first time the development of state-of-the-art ion-implanted-channel SiC MESFETs with record dc and RF performance that is comparable to that of epitaxial-channel devices. MESFETs fabricated with this approach show a maximum stable gain exceeding 15.8 dB at 3.1 GHz in class-AB bias condition. An RF power output that is greater than 4 W/mm, with 63% drain efficiency, at 3.5 GHz was also achieved, showing the potential of these devices for high-power operation.
Archive | 2012
Van Mieczkowski; Daniel Namishia
Archive | 2013
Helmut Hagleitner; Fabian Radulescu; Daniel Namishia
Archive | 2013
Sarah K. Haney; Brett Hull; Daniel Namishia
Archive | 2011
Helmut Hagleitner; Daniel Namishia
Archive | 2013
Zoltan Ring; Helmut Hagleitner; Daniel Namishia
Archive | 2015
Zoltan Ring; Donald A. Gajewski; Scott T. Sheppard; Daniel Namishia
Archive | 2015
Helmut Hagleitner; Daniel Namishia
Archive | 2014
Sarah K. Haney; Brett Hull; Daniel Namishia
Archive | 2014
Zoltan Ring; Helmut Hagleitner; Daniel Namishia
