Danny Elad

High-power high-linearity SiGe based E-BAND transceiver chipset for broadband communication

Fully integrated chipset at E-band frequencies in a superhetrodyne architecture covering the lower 71-76GHz and upper 81-86GHz bands were designed and fabricated in 0.13μm SiGe technology. The receiver chips include an image-reject low-noise amplifier (LNA), RF-to-IF mixer, variable gain IF amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and frequency multiplier by four (quadrupler). The receiver chips achieve maximum gain of 65dB, 6dB noise figure, better than -10 dBm IIP3, with more than 65 dB dynamic range, and consumes 600 mW. The transmitter chips include a power amplifier, image-reject driver, IF-to-RF up-converting mixer, variable gain IF amplifier, quadrature baseband-to-IF modulator, PLL, and frequency quadrupler. It achieves output power at P1dB of 17.5 to 18.5 dBm, Psat of 20.5 to 21.5 dBm, an analog controlled dynamic range of 30 dB and consumes 1.75 W.

A fully integrated SiGe E-BAND transceiver chipset for broadband point-to-point communication

Fully integrated chipset at E-band frequencies in a superhetrodyne architecture covering the lower 71-76 GHz and upper 81-86 GHz bands were designed and fabricated in 0.13%m SiGe technology. The receiver chips include an image-reject low-noise amplifier (LNA), RF-to-IF mixer, variable gain IF amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and frequency multiplier by four (quadrupler). The receiver chips achieve 60dB gain, 8.5 dB noise figure, -30 dBm IIP3, and consumes 600 mW. The transmitter chips include a power amplifier, image-reject driver, IF-to-RF up-converting mixer, variable gain IF amplifier, quadrature baseband-to-IF modulator, PLL, and frequency multiplier by four (quadrupler). It achieves output power P1dB of 0 to 11 dBm, Psat of 3.3 to 14 dBm, and consumes 850 mW.

An active up conversion mixer covering the entire 71–86GHz Eband range in SiGe Technology

An IF to RF up-conversion mixer for the entire E-BAND 71-76 GHz and 81-86 GHz frequency range was designed and fabricated in IBM 0.12 μm SiGe technology. The Mixer comprises of a double balanced Gilbert-cell with a degeneration inductor in the amplifying stage for increased linearity. The mixer exhibits conversion gain higher than -2 dB, output compression point above -7 dBm, and LO leakage less than -30 dB. The core mixer area is 0.37 mm2 and consumes 140 mW from a 2.7 V power supply.

A high suppression frequency tripler for 60-GHz transceivers

A compact frequency tripler designed for 60 GHz transceivers is implemented in 0.13μm SiGe technology. The common emitter class-A frequency tripler uses a transformer based output filter combined with transmission lines to achieve high harmonic suppression. The frequency tripler followed by an amplifier covers a 3dB frequency range between 48 GHz to 58 GHz with a peak output power of 9.5 dBm. Fundamental frequency is suppressed by more than 28 dBc and the 4th harmonic is suppressed by more than 35 dBc between -40°C to 85°C degrees across the frequency band. The tripler design occupies only 390 μm × 495 μm and consumes 62 mW from a 2.7 V supply, the design followed by an amplifier occupies 960 μm × 980 μm raising the DC consumption to 220 mW.

Antenna-Coupled MOSFET Bolometers for Uncooled THz Sensing

In this paper, we present a comprehensive study on the operation of an antenna-coupled THz bolometer based on a micro-machined SOI-CMOS thermal sensor. The pixels are designed to operate at room temperature in vacuum. We focus on a new planar skirt antenna, which combines high sensitivity within a 0.6-1.2 THz band and 30 ° HPBW. We present an overview of the design considerations, as well as the characterization results which were obtained with both broadband and CW THz sources. The NEP of the pixel is of the order of 25 pW/Hz 1/2, with responsivity 100 mA/W at the optimal operating point. The peak responsivity to a broadband THz signal is 600 mA/W. The ease of integration with a read-out circuit and the low power dissipation make this type of pixel a good candidate for focal plane array architecture.

A SiGe E-band transceiver circuits for broadband communication

Two sets of E-band transceiver circuits in a superhetrodyne architecture covering the lower 71–76GHz and upper 81–86GHz bands were designed and fabricated in 0.13μm SiGe technology. The measured upper band transmitter RF gain chain is 30dB with a saturated output power of 15.2dBm. The LNA exhibits more than 15dB gain. A frequency quadrupler was used to generate the LO signal in both transmitter and receiver enabling a single PLL design with reuse of 60GHz intermediate and baseband circuits. The measured value of quadrupler conversion gain is approximately −8dB, to our best knowledge the highest reported value for a SiGe frequency quadrupler. Measurements of fabricated critical circuits in conjunction with modifications performed to proven 60GHz transceiver components enables a complete E-band transceiver circuit solution covering the entire E-band frequency range. The paper will focus on the critical E-band building blocks.

A robust low phase noise K u band VCO with 23.3% tuning range for E-band and V-band backhaul transceivers

This paper presents a Ku band Gm boosted Colpitts VCO designed in IBM 0.13μm SiGe BiCMOS8hp technology for E-Band and V-band backhaul transceivers. The VCO achieves 23.3% tuning range, covering 15.2 - 19.2 GHz while maintaining low phase noise. Measured phase noise at 10 MHz is lower than -133 dBc/Hz at 25°C. The VCO shows robust behaviour to temperature variations, with a measured frequency drift of less than 15 ppm/°C. The power consumption is 51.4mW and calculated FOM is -183.5 dBc/Hz.

Design of a cloverleaf antenna for an antenna coupled bolometer for room temperature THz imaging

THz-imaging enables promising applications in the medical and security domain, such as detectors for skin cancer or full-body scanners. These new possibilities arise the need for detectors in the THz frequency range. An antenna-coupled bolometer approach in a standard CMOS-SOI process, followed by a MEMS post CMOS process, is suggested to fabricate such a detector. Therefore, in this paper a cloverleaf shaped antenna design for the frequency range 0.5 THz to 1.5 THz is presented. Several design steps are shown together with measurement results regarding the influence of the MEMS process.

High-performance 81–86 GHz transceiver chipset for Point-to-Point communication in SiGe BiCMOS technology

Fully integrated chipset at E-band frequencies in a superhetrodyne architecture covering the 81-86 GHz band was designed and fabricated in 0.13 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, variable gain IF amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and frequency multiplier by four (quadrupler). The receiver chip achieves maximum gain of 73 dB, 6 dB noise figure, better than -12 dBm IIP3, with more than 65 dB dynamic range, and consumes 600 mW. The transmitter chip includes a power amplifier (PA), image-reject driver, variable RF attenuators, IF-to-RF upconverting mixer, variable gain IF amplifier, quadrature baseband-to-IF modulator, PLL, and frequency quadrupler. It achieves output power at P1dB of 16.6 dBm, Psat of 18.8 dBm on a single-ended output and consumes 1.8 W.

A low phase noise Ku-band sub-integer frequency synthesizer for E-band transceivers

A Ku band frequency synthesizer is designed and implemented in 0.13 μm SiGe technology as a part of an E-band superhetrodyne transceiver chipset. It provides for RF channels of 71-76 GHz in 62.5 MHz steps, and features a phase rotating pulse injection division region switching sub-integer frequency divider. Output frequency ranges from 15.4 to 16.7 GHz. The measured differential output power is about -6 dBm measured phase noise at 100-kHz 1-MHz and 10 MHz is -84, -111 and -131 dBc/Hz, respectively. Reference spurs are at -44 dBc and sub-integer spurs are at -45 dBc, with power consumption of 166 mW.