Daping Chu
University of Cambridge
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Publication
Featured researches published by Daping Chu.
ACS Nano | 2012
Felice Torrisi; Tawfique Hasan; Weiping Wu; Zhipei Sun; A. Lombardo; T. S. Kulmala; Gen-Wen Hsieh; Sungjune Jung; Francesco Bonaccorso; Philip J. Paul; Daping Chu; A. C. Ferrari
We demonstrate inkjet printing as a viable method for large-area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to ∼95 cm(2) V(-1) s(-1), as well as transparent and conductive patterns, with ∼80% transmittance and ∼30 kΩ/□ sheet resistance. This paves the way to all-printed, flexible, and transparent graphene devices on arbitrary substrates.
Proceedings of the IEEE | 2012
Arokia Nathan; Arman Ahnood; Matthew T. Cole; Sungsik Lee; Yuji Suzuki; Pritesh Hiralal; Francesco Bonaccorso; Tawfique Hasan; Luis Garcia-Gancedo; Andriy Dyadyusha; Samiul Haque; Piers Andrew; Stephan Hofmann; James Moultrie; Daping Chu; Andrew J. Flewitt; A. C. Ferrari; M. J. Kelly; J. Robertson; G.A.J. Amaratunga; W. I. Milne
Thin-film electronics in its myriad forms has underpinned much of the technological innovation in the fields of displays, sensors, and energy conversion over the past four decades. This technology also forms the basis of flexible electronics. Here we review the current status of flexible electronics and attempt to predict the future promise of these pervading technologies in healthcare, environmental monitoring, displays and human-machine interactivity, energy conversion, management and storage, and communication and wireless networks.
IEEE\/OSA Journal of Display Technology | 2011
Neil Collings; Tony Davey; Jamie Christmas; Daping Chu; Bill Crossland
An introduction to the technology of liquid crystal on silicon (LCOS) devices leads on to a discussion of the application areas which have been and are being opened up by the development of phase-only devices.
Applied Physics Letters | 2010
Chi Li; Yan Zhang; Mark Mann; D. G. Hasko; Wei Lei; Baoping Wang; Daping Chu; Didier Pribat; G.A.J. Amaratunga; W. I. Milne
A vertically aligned carbon nanotube mesh emitter array has been fabricated and tested, giving a current density of up to 1.5 A/cm2, and a threshold field of 1.5 V/μm for a current density 1 mA/cm2. Low temperature carbon nanotube growth is used to fabricate the carbon nanotube mesh emitter arrays significantly reducing the cost of the fabrication of large area electron emitters. This system exhibits ultralong lifetime.
Nanoscale Research Letters | 2010
X. Li; Chi Li; Y. Zhang; Daping Chu; W. I. Milne; Hong Jin Fan
In this article, direct coating of ZnO on PECVD-grown multi-walled carbon nanotubes (MWCNTs) is achieved using atomic layer deposition (ALD). Transmission electron microscopy investigation shows that the deposited ZnO shell is continuous and uniform, in contrast to the previously reported particle morphology. The ZnO layer has a good crystalline quality as indicated by Raman and photoluminescence (PL) measurements. We also show that such ZnO layer can be used as seed layer for subsequent hydrothermal growth of ZnO nanorods, resulting in branched CNT–inorganic hybrid nanostructures. Potentially, this method can also apply to the fabrication of ZnO-based hybrid nanostructures on other carbon nanomaterials.
Applied Physics Letters | 2009
Husnu Emrah Unalan; Yan Zhang; Pritesh Hiralal; Sharvari Dalal; Daping Chu; Goki Eda; K. B. K. Teo; Manish Chhowalla; W. I. Milne; G.A.J. Amaratunga
Zinc oxide (ZnO) nanowire networks have been proposed as an alternative to organic and amorphous semiconductors for plastic electronics. Although the mobility of the ZnO networks is lower than that of individual nanowires, they offer the advantages of high transparency and flexibility. A major drawback of using individual nanowires in nano or microelectronic applications is the lack of a manufacturable process to precisely assemble nanowires into small devices. The use of ZnO networks avoid this issue for relatively large area macroelectronic devices since the devices exhibit the average properties of a large number of random individual nanowires. In this work, we have deposited uniform ZnO thin films using an easy, scalable, stamping method and characterized their electronic and optoelectronic properties. We have also demonstrated the use of ZnO networks as an active material in thin film transistors where mobility values in excess of 20 cm2/Vs has been achieved. The results presented here simply reveal the potential use of inorganic nanowires for optoelectronic devices.
Applied Physics Letters | 2000
Colm Durkan; Daping Chu; Piero Migliorato; Mark E. Welland
We describe nanoscale characterization of sol-gel produced ferroelectric thin films of lead–zirconate–titanate. We have performed quantitative localized measurements of surface polarization charge density using atomic force microscopy techniques in conjunction with electric field calculations. We show that domains with radii of 40 nm may by written and subsequently characterized, and we analyze the dependence of domain size on write voltage and write time, and show that surface contaminants influence the formation of domains.
Physical Review B | 1997
Daping Chu; M. G. Dowsett
We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribution from the secondary ion mass spectrometry (SIMS) depth profiles on a system of variously spaced boron
Applied Physics Letters | 2010
C Li; Y. Zhang; Mark Mann; Pritesh Hiralal; Husnu Emrah Unalan; Wei Lei; Baoping Wang; Daping Chu; Didier Pribat; G.A.J. Amaratunga; W. I. Milne
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Optics Express | 2015
Jhen-Si Chen; Daping Chu
-layers grown in silicon. Sample independent response functions are obtained using a new method which reduces the danger of incorporating real sample behaviour in the response. Although the original profiles of different primary ion energies appear quite differently, the reconstructed distributions agree well with each other. The depth resolution in the reconstructed data is increased significantly and segregation of boron at the near surface side of the