David Estrada

Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes

The crystallinity and resistivity of a compound semiconductor was changed with current pulses delivered by nanoelectrodes. Phase-change materials (PCMs) are promising candidates for nonvolatile data storage and reconfigurable electronics, but high programming currents have presented a challenge to realize low-power operation. We controlled PCM bits with single-wall and small-diameter multi-wall carbon nanotubes. This configuration achieves programming currents of 0.5 microampere (set) and 5 microamperes (reset), two orders of magnitude lower than present state-of-the-art devices. Pulsed measurements enable memory switching with very low energy consumption. Analysis of over 100 devices finds that the programming voltage and energy are highly scalable and could be below 1 volt and single femtojoules per bit, respectively.

Stretchable, Transparent Graphene Interconnects for Arrays of Microscale Inorganic Light Emitting Diodes on Rubber Substrates

This paper describes the fabrication and design principles for using transparent graphene interconnects in stretchable arrays of microscale inorganic light emitting diodes (LEDs) on rubber substrates. We demonstrate several appealing properties of graphene for this purpose, including its ability to spontaneously conform to significant surface topography, in a manner that yields effective contacts even to deep, recessed device regions. Mechanics modeling reveals the fundamental aspects of this process, as well as the use of the same layers of graphene for interconnects designed to accommodate strains of 100% or more, in a completely reversible fashion. These attributes are compatible with conventional thin film processing and can yield high-performance devices in transparent layouts. Graphene interconnects possess attractive features for both existing and emerging applications of LEDs in information display, biomedical systems, and other environments.

Stacked Graphene-Al2O3 Nanopore Sensors for Sensitive Detection of DNA and DNA–Protein Complexes

We report the development of a multilayered graphene-Al(2)O(3) nanopore platform for the sensitive detection of DNA and DNA-protein complexes. Graphene-Al(2)O(3) nanolaminate membranes are formed by sequentially depositing layers of graphene and Al(2)O(3), with nanopores being formed in these membranes using an electron-beam sculpting process. The resulting nanopores are highly robust, exhibit low electrical noise (significantly lower than nanopores in pure graphene), are highly sensitive to electrolyte pH at low KCl concentrations (attributed to the high buffer capacity of Al(2)O(3)), and permit the electrical biasing of the embedded graphene electrode, thereby allowing for three terminal nanopore measurements. In proof-of-principle biomolecule sensing experiments, the folded and unfolded transport of single DNA molecules and RecA-coated DNA complexes could be discerned with high temporal resolution. The process described here also enables nanopore integration with new graphene-based structures, including nanoribbons and nanogaps, for single-molecule DNA sequencing and medical diagnostic applications.

Imaging, Simulation, and Electrostatic Control of Power Dissipation in Graphene Devices

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; by changing the applied bias, this can be shifted between electrodes or held in the middle of the channel in ambipolar transport. Interestingly, the hot spot shape bears the imprint of the density of states in mono- vs bilayer graphene. More broadly, we find that thermal imaging combined with self-consistent simulation provide a noninvasive approach for more deeply examining transport and energy dissipation in nanoscale devices.

Atomic-scale evidence for potential barriers and strong carrier scattering at graphene grain boundaries: a scanning tunneling microscopy study.

We use scanning tunneling microscopy and spectroscopy to examine the electronic nature of grain boundaries (GBs) in polycrystalline graphene grown by chemical vapor deposition (CVD) on Cu foil and transferred to SiO(2) substrates. We find no preferential orientation angle between grains, and the GBs are continuous across graphene wrinkles and SiO(2) topography. Scanning tunneling spectroscopy shows enhanced empty states tunneling conductance for most of the GBs and a shift toward more n-type behavior compared to the bulk of the graphene. We also observe standing wave patterns adjacent to GBs propagating in a zigzag direction with a decay length of ~1 nm. Fourier analysis of these patterns indicates that backscattering and intervalley scattering are the dominant mechanisms responsible for the mobility reduction in the presence of GBs in CVD-grown graphene.

Polycrystalline Graphene Ribbons as Chemiresistors

Prof. E. PopDepartment of Electrical and Computer Engineering University Of Illinois at Urbana Champaign, USAD. Estrada,M.-H. Bae, F. Xiong, Prof. E. PopMicro and Nanotechnology Lab University Of Illinois at Urbana Champaign, USAF. Xiong, Prof. E. PopBeckman Institute University Of Illinois at Urbana Champaign, USAA. Salehi-Khojin Prof. R. I. MaselDioxide Materials, 60 Hazelwood Dr, Champaign IL 61820, USA E-mail: rich.masel@dioxidematerials.com

Reduction of hysteresis for carbon nanotube mobility measurements using pulsed characterization

We describe a pulsed measurement technique for suppressing hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hysteresis-free measurements of CNT mobility. A tunneling front model for charge trapping and relaxation is also described, suggesting trap depths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also be applicable for other nanoscale devices such as graphene, nanowires, or molecular electronics, and could enable probing trap relaxation times in a variety of material system interfaces.

Electrochemistry at the Edge of a Single Graphene Layer in a Nanopore

We study the electrochemistry of single layer graphene edges using a nanopore-based structure consisting of stacked graphene and Al(2)O(3) dielectric layers. Nanopores, with diameters ranging from 5 to 20 nm, are formed by an electron beam sculpting process on the stacked layers. This leads to a unique edge structure which, along with the atomically thin nature of the embedded graphene electrode, demonstrates electrochemical current densities as high as 1.2 × 10(4) A/cm(2). The graphene edge embedded structure offers a unique capability to study the electrochemical exchange at an individual graphene edge, isolated from the basal plane electrochemical activity. We also report ionic current modulation in the nanopore by biasing the embedded graphene terminal with respect to the electrodes in the fluid. The high electrochemical specific current density for a graphene nanopore-based device can have many applications in sensitive chemical and biological sensing, and energy storage devices.

The role of external defects in chemical sensing of graphene field-effect transistors

A fundamental understanding of chemical sensing mechanisms in graphene-based chemical field-effect transistors (chemFETs) is essential for the development of next generation chemical sensors. Here we explore the hidden sensing modalities responsible for tailoring the gas detection ability of pristine graphene sensors by exposing graphene chemFETs to electron donor and acceptor trace gas vapors. We uncover that the sensitivity (in terms of modulation in electrical conductivity) of pristine graphene chemFETs is not necessarily intrinsic to graphene, but rather it is facilitated by external defects in the insulating substrate, which can modulate the electronic properties of graphene. We disclose a mixing effect caused by partial overlap of the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of adsorbed gas molecules to explain graphenes ability to detect adsorbed molecules. Our results open a new design space, suggesting that control of external defects in supporting substrates can lead to tunable graphene chemical sensors, which could be developed without compromising the intrinsic electrical and structural properties of graphene.

Imaging dissipation and hot spots in carbon nanotube network transistors

We use infrared thermometry of carbon nanotube network (CNN) transistors and find the formation of distinct hot spots during operation. However, the average CNN temperature at breakdown is significantly lower than expected from the breakdown of individual nanotubes, suggesting extremely high regions of power dissipation at the CNN junctions. Statistical analysis and comparison with a thermal model allow the estimate of an upper limit for the average tube-tube junction thermal resistance, ∼4.4×1011 K/W (thermal conductance of ∼2.27 pW/K). These results indicate that nanotube junctions have a much greater impact on CNN transport, dissipation, and reliability than extrinsic factors such as low substrate thermal conductivity.