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David W. Daniel

LSI Corporation

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Publication

Featured researches published by David W. Daniel.

Journal of the Acoustical Society of America | 2002

Sonic assisted strengthening of gate oxides

Kang-Jay Hsia; George H. Maggard; David W. Daniel

A method and apparatus for repairing and improving the endurance characteristics of process damaged oxide film formed in a semiconductor device involving sonic annealing by vibrating or oscillating a wafer at a predetermined frequency, wave amplitude, and duration. A signal from a frequency generator is amplified by a voltage amplifier and then sent to a speaker or other acoustic device for the production of vibrating acoustical wave energy. This acoustical wave energy is then directed at a submicron device wafer during a specified time period in order to anneal the gate oxide and, thereby, improve the characteristics of the oxide film.

Archive | 1999

Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET

John J. Seliskar; Verne Hornback; David W. Daniel

Archive | 1996

Method for fabricating a low trigger voltage silicon controlled rectifier and thick field device

John D. Walker; David W. Daniel

Archive | 1998

Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer

Derryl D. J. Allman; David W. Daniel; Michael F. Chisholm

Archive | 2000

Fully-depleted, fully-inverted, short-length and vertical channel, dual-gate, cmos fet

Michael F. Chisholm; David W. Daniel; Verne Hornback; John J. Seliskar

Archive | 1997

Method for improved gate oxide integrity on bulk silicon

David W. Daniel; Theodore C. Moore; Crystal J. Hass

Archive | 1998

Fabrication of differential gate oxide thicknesses on a single integrated circuit chip

David W. Daniel; Dianne G. Pinello; Michael F. Chisholm

Archive | 1998

MeV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor

John J. Seliskar; David W. Daniel; Todd A. Randazzo

Archive | 2000

Reduction of silicon defect induced failures as a result of implants in CMOS and other integrated circuits

David W. Daniel

Archive | 1998

Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance

David W. Daniel; John W. Gregory; Derryl D. J. Allman

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Collaboration

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Derryl D. J. Allman

LSI Corporation

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John J. Seliskar

LSI Corporation

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John W. Gregory

LSI Corporation

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Michael F. Chisholm

LSI Corporation

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John D. Walker

LSI Corporation

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Todd A. Randazzo

LSI Corporation

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Verne Hornback

LSI Corporation

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Crystal J. Hass

LSI Corporation

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Dianne G. Pinello

LSI Corporation

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Dodd Defibaugh

LSI Corporation

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