de T Tjibbe Vries

A compact digitally tunable seven-channel ring laser

A seven-channel ring laser was realized by monolithic integration of a compact 4/spl times/4 PHASAR (de)multiplexer with four amplifiers in InP. The PHASAR was fabricated using a double-etch technique, enabling a total size of the ring laser of only 1/spl times/1.5 mm/sup 2/. Light was coupled out via the outer array waveguides. Reflections are minimized by using mode filters and angled facets. Threshold-currents of 70 mA and a sidemode suppression ratio of 40 dB were measured. In principle, a ring laser with N amplifiers can produce 3N-3 different wavelengths.

Unidirectional III-V microdisk lasers heterogeneously integrated on SOI

We demonstrate unidirectional bistability in microdisk lasers electrically pumped and heterogeneously integrated on SOI. The lasers operate in continuous wave regime at room temperature and are single mode. Integrating a passive distributed Bragg reflector (DBR) on the waveguide to which the microdisk is coupled feeds laser emission back into the laser cavity. This introduces an extra unidirectional gain and results in unidirectional emission of the laser, as demonstrated in simulations as well as in experiment.

InP/InGaAs photodetector on SOI circuitry

We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

Monolithic Multiband Nanosecond Programmable Wavelength Router

A compact scalable reconfigurable multiwavelength router is proposed and demonstrated using an electronically gated cyclic router. Simultaneous wavelength-multiplexed channel allocation is performed with power penalties of 0.2-0.8 dB. Nanosecond timescale reconfiguration is achieved within a 2-ns guard band using semiconductor optical amplifier gates.

InP-Based Membrane Couplers for Optical Interconnects on Si

We present the design, fabrication, and characterization of a membrane coupler processed on an indium phosphide membrane layer on a silicon-on-insulator wafer, that is used for applications in optical interconnects on silicon. Measured coupler efficiency is 50%. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic integrated circuit processing.

InP-based Membrane Photodetectors for Optical Interconnects to Si

We present the design, fabrication and a characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Waveguide losses in the Si-wiring circuit are below 5 dB/cm. Measured detector responsivity is 0.45 A/W. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

Indium phosphide based membrane photodetector for optical interconnects on silicon

We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

Heterogeneously integrated III-V/Si single mode lasers based on a MMI-ring configuration and triplet-ring reflectors

In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrated III-V/silicon single mode lasers can be realized. Two new designs were implemented: in a first design a multimode interferometer coupler (MMI) – ring resonator combination is used to provide a comb-like reflection spectrum, while in a second design a triplet-ring reflector design is used to obtain the same. A broadband silicon Bragg grating reflector is implemented on the other side of the cavity. The III-V optical amplifier is heterogeneously integrated on the 400nm thick silicon waveguide layer, which is compatible with high-performance modulator designs and allows for efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the optical coupling efficient, both the III-V waveguide and the silicon waveguide are tapered, with a tip width of the III-V waveguide of around 500nm. The III-V thin film optical amplifier is implemented as a 3μm wide mesa etched through to the n-type InP contact layer. In this particular device implementation the amplifier section was 500μm long. mW-level waveguide coupled output power at 20°C and a side mode suppression ratio of more than 40dB is obtained.

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

Oxidation of AlInAs for current blocking in a photonic crystal laser

To make an electrically pumped photonic crystal membrane laser is a challenging task. One of the problems is how to avoid short circuiting between the p- and n-doped parts of the laser diode, when the membrane thickness is limited to 200–300nm. We propose to use the oxide of AlInAs to realize a current blocking function. In this way, based on submicron selective area re-growth, we aim for electrically injected photonic crystal lasers with high output power, small threshold currents and low power consumption. Here results are presented on the oxidation of AlInAs. The results show that it is feasible to use the oxide of AlInAs for current blocking in an InP-based membrane photonic crystal laser.