Jjm Hans Binsma

A compact nine-channel multiwavelength laser

A phased-array-based multiwavelength laser has been realized on a chip area of 3.5/spl times/2.5 mm/sup 2/. The device has nine channels, spaced at 400 GHz around a central wavelength of 1.55 /spl mu/m. Its performance is characterized by a minimum threshold current of 101 mA, a maximum fiber-coupled power of 0.37 mW, and a linewidth of 21 MHz. In addition, simultaneous four-channel operation is demonstrated.

A compact digitally tunable seven-channel ring laser

A seven-channel ring laser was realized by monolithic integration of a compact 4/spl times/4 PHASAR (de)multiplexer with four amplifiers in InP. The PHASAR was fabricated using a double-etch technique, enabling a total size of the ring laser of only 1/spl times/1.5 mm/sup 2/. Light was coupled out via the outer array waveguides. Reflections are minimized by using mode filters and angled facets. Threshold-currents of 70 mA and a sidemode suppression ratio of 40 dB were measured. In principle, a ring laser with N amplifiers can produce 3N-3 different wavelengths.

Realization and modeling of a 27-GHz integrated passively mode-locked ring laser

We present a realization and the modeling of a 27-GHz integrated extended cavity ring laser that is passively mode-locked. The mode-locked ring laser is fabricated with active-passive integration. Experimental results show that internal reflections are the major factor affecting operation stability. Continuous-wave, self-pulsating, and in small windows of operation mode-locked regimes have been observed. Similar regimes have been observed in our bidirectional laser model. This model describes the semiconductor amplifier and the saturable absorber using rate equations. Our experimental and theoretical results are compared and discussed.

Measurement of reflectivity of butt-joint active-passive interfaces in integrated extended cavity lasers

A method and measurement results are presented for the determination of the reflectivity of butt-joint active-passive interfaces in a series of extended cavity Fabry-Pe/spl acute/rot lasers. The method is based on the analysis of subthreshold laser spectra. The small reflections at the two intracavity active-passive interfaces modify the mode structure of the laser. By fitting the calculated subthreshold mode structure to the recorded data, values of the reflectivities are extracted. An average value of 9.10/sup -5/ has been determined. The value of the reflectivity of those interfaces is relevant for photonic integrated circuits and particularly integrated mode-locked lasers.

An integrated 4 x 4-channel multiwavelength laser on InP

We present a compact 16-channel digitally tunable laser integrated on InP with the possibility to produce groups of four wavelengths at the same time. The cavity contains two arrays of four semiconductor optical amplifiers (SOAs) with two periodical four-channel intracavity phased arrays (PHASARs) with channel spacings of 100 and 400 GHz. By activating two out of the eight SOAs, 16 different wavelengths can be selected. Light was coupled out of the cavity by waveguides placed in the second focal order of the PHASARs. Reflections from the end facets of the wafer are minimized using mode filters and angled output waveguides.

Loss reduction for phased-array demultiplexers using a double etch technique

Wavelength Division Multiplexing (WDM) is an effective technique to exploit the huge bandwidth of optical fibres. Key components in such WDM-systems are demultiplexers which spatially separate the different wavelength channels. Phased-array demultiplexers combine ease of fabrication and low insertion losses. Silica-based phased-array demultiplexers are realised with low losses from 2-3 dB [1,2]. InP-based demultiplexers show slightly higher on-chip losses of 4-6 dB [3,4]. In addition they have considerably higher fibre coupling losses (several dB’s), but the advantage of InP-based demultiplexers is that they can be integrated with active components. Earlier we reported a low-loss demultiplexer with reduced fibre coupling loss by applying deeply etched InGaAsP waveguides with a relatively large core and a low index contrast, which had an almost circular mode profile [5]. The component had 4-5 dB on-chip loss and fibre coupling loss of about 1 dB to a tapered fibre. In this article we report a method to further reduce the on-chip losses.

Wavelength selection in an integrated multiwavelength ring laser

The wavelength selection mechanism of a compact integrated multiwavelength ring laser is demonstrated. The device contains four semiconductor optical amplifiers, a compact arrayed waveguide grating and passive waveguides integrated on a single InP wafer. The device can produce seven different wavelengths through biasing one or two out of the four amplifiers. Comparison of calculated and measured subthreshold laser spectra demonstrates the role of crosstalk in the arrayed waveguide grating in the laser and allows the crosstalk to be quantified. A rate-equation model of the laser and measurements are presented that describe the switching between wavelengths of the laser as a function of bias currents. A comparison between the measured data and the model is made.

A Tunable-MMI-Coupler-Based Wavelength Adjustable Laser

This paper introduces a novel integrated widely tunable laser, the tunable multimode interference (T-MMI) laser, with as tunable component an MMI coupler with a wavelength adjustable transmission spectrum. Experiments demonstrate up to 150 nm of tuning range for the T-MMI component and operation of a widely tunable T-MMI laser is demonstrated over a wavelength range of 38 nm.

Self-switching in Mach-Zehnder interferometers with SOA phase shifters

A self-switching mechanism in Mach-Zehnder interferometers (MZIs) is described. The input light signal is distributed unequally over the interferometer arms using an multimode interference (MMI) coupler. In the arms, semiconductor optical amplifiers are placed as nonlinear phase shifters. Unequal intensities yield a nonlinear phase shift. The signals from the two arms are then recombined in an output MMI coupler. If an obtained nonlinear phase shift in the arms can compensate the coupler-induced phase difference between the arms, the signals are in phase at the output port. Choosing an appropriate output coupler, 2/spl times/1 and 2/spl times/2 devices can be obtained. The 2/spl times/2 and 2/spl times/1 MZIs can be used as pattern effect compensators and 2R-regenerators or low-loss combiner circuits, respectively. An active-passive integration technique is applied in order to realize the interferometric structures. Fabrication, simulation, and characterization of these devices are presented in this letter.

ICP etching of InP and its applications in photonic circuits

Ridge waveguides with smooth and vertical sidewalls are essential in photonic circuits. We have investigated waveguide realization with reactive ion etching of InP and InP-based structures using a SiNx in a Cl2/H2/CH4 chemistry in an ICP plasma. Depending on ICP power and RF power, etching rates can be obtained from 200 nm/min up to > 2μm/min. A maximum etching selectivity of InP vs SiNx of 12 was obtained at 2000 W of ICP power. Deep etched waveguides, fabricated in an InP/InGaAsP double heterostructure, show typical losses of 2 dB/cm. This low value shows the potential of ICP technique in the fabrication of photonic circuits.