Dhinesh Babu Velusamy

Non-volatile organic memory with sub-millimetre bending radius

High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

Flexible transition metal dichalcogenide nanosheets for band-selective photodetection.

The photocurrent conversions of transition metal dichalcogenide nanosheets are unprecedentedly impressive, making them great candidates for visible range photodetectors. Here we demonstrate a method for fabricating micron-thick, flexible films consisting of a variety of highly separated transition metal dichalcogenide nanosheets for excellent band-selective photodetection. Our method is based on the non-destructive modification of transition metal dichalcogenide sheets with amine-terminated polymers. The universal interaction between amine and transition metal resulted in scalable, stable and high concentration dispersions of a single to a few layers of numerous transition metal dichalcogenides. Our MoSe2 and MoS2 composites are highly photoconductive even at bending radii as low as 200 μm on illumination of near infrared and visible light, respectively. More interestingly, simple solution mixing of MoSe2 and MoS2 gives rise to blended composite films in which the photodetection properties were controllable. The MoS2/MoSe2 (5:5) film showed broad range photodetection suitable for both visible and near infrared spectra.

High throughput modification of chemically reduced graphene oxides by a conjugated block copolymer in non-polar medium

We present a simple, but robust route to efficiently disperse very high rGO concentrations of chemically reduced graphene oxides (rGOs) in various non-polar solvents and polymers. Our method is based on the noncovalent, nondestructive modification of rGOs with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). The dispersion of rGOs occurred because PPP blocks strongly adhered to basal planes of rGOs by π–π interactions, while PS blocks provided good solubility in a variety of non-polar environments. The resulting PS-b-PPP modified rGOs (PMrGOs) showed excellent solubility and dispersion stability that was dependent on the quality of the solvent with respect to the PS blocks. In particular, extremely high solubility of the rGOs, as high as 1.5 mg mL−1, was achieved in THF. Our PMrGOs and their solution blends with other non-polymer polymers such as PS, poly(methylmethacrylate) and poly(isoprene-block-styrene) were conveniently spin-coated on various substrates, giving rise to ultra-thin nanohybrid films where the amount of rGO can be systematically controlled. The scalable and simple strategy employed for fabricating rGO nanohybrid films allowed us to assemble a high performance non-volatile resistive polymer memory device in which the bias-dependent trapping and de-trapping of injected charges were efficiently manipulated on the surface of highly dispersed rGO sheets in the nanohybrid.

Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets.

2D nanomaterials have been actively utilized in non-volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D-stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re-writable, bistable, transparent, and flexible solution-processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single- or multi-component-based multilayers composed of positively charged GO (N-GO(+) or NS-GO(+)) with/without negatively charged GO(-) using layer-by-layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi-component active layer Au/[N-GO(+)/GO(-)]n /Al/PES shows higher ON/OFF ratio of ≈105 with switching voltage of -1.9 V and higher retention stability (≈104 s), whereas the device based on single component (Au/[N-GO(+)]n /Al/PES) shows ≈103 ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi-component-based device are attributed to a higher coating surface roughness. The Au/[N-GO(+)/GO(-)]n /Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈109 ) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO-based solutions. It is found that the devices containing MnO2 in the dielectric layer do not improve the ReRAM performance.