Didier Robein
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Publication
Featured researches published by Didier Robein.
IEEE Journal of Selected Topics in Quantum Electronics | 1995
C. Kazmierski; Didier Robein; D. Mathoorasing; A. Ougazzaden; Marcel Filoche
We introduce a new concept for gratings, based on a spatial carrier modulation, induced by current for optoelectronic devices. The concept is experimentally tested on gain coupled lasers, showing predicted features as high-power, low-linewidth, and length-independent coupling length product. >
IEEE Journal of Quantum Electronics | 1991
C. Kazmierski; A. Ougazzaden; M. Blez; Didier Robein; Jean Landreau; B. Sermage; Jean Claude Bouley; A. Mircea
The potential advantages of GaInAs/InP multiquantum well (MQW) structures over bulk material for improving the static properties of buried heterostructure (BH) lasers are demonstrated. Using a highly uniform metalorganic vapor phase epitaxy (MOVPE) growth, an optimized simple separate confinement heterostructure (SCH) MQW layer stack, and the buried ridge stripe (BRS) structure, improved static performances over any bulk or unstrained MQW long wavelength laser were obtained. An extremely low threshold below 2 mA was obtained in short cavity lasers, the threshold current was only 10.6 mA and 110 mW continuous-wave (CW) maximum optical power was observed using 90%/10% reflectivity coatings. >
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications | 1991
D. Remiens; V. Hornung; B. Rose; Didier Robein
Monolithic integration between an active and a passive waveguide directly buttjointed in a single step of MOCVD is demonstrated at 1. 5pm. The growth behavior on a patterned InP substrate is studied by using a periodic structure of GaInAs or InGaAsP/InP layers. Buried Ridge Stripe (B. R. S. ) structures consisting of a 25Ojjm long active region and 13OOjm long passive waveguide exhibit 25 mA threshold current 60 coupling coefficient and an optical output power in excess of 5 mW is measured at the passive waveguide. The monolithic integration of a distributed feedback laser coupled to a passive waveguide with this new concept is investigated.
international semiconductor laser conference | 1994
H. Nakajima; J. Charil; S. Slempkes; A. Gloukhian; Didier Robein; D. Mathoorasing; S. Cherif; J.C. Bouley
Summary form only given. The aim of the paper is to show the impact of the modal gain saturation on the tuning-range as well as the tuning rate of three-contact DFB lasers (and filters) at single current modulation. Taking into account the modal gain saturation due to gain-curve-shift, we have demonstrated theoretically and experimentally the feasibility of a wide wavelength tuning (2.5 nm) and a high tuning rate with a small power change by single (lateral) current tuning in the case of three-contact DFB lasers and filters.
international conference on indium phosphide and related materials | 1991
V. Hornung; D. Remiens; Didier Robein; A. Gloukhian; J. Landreau
An application of nonplanar metalorganic chemical vapor deposition (MOCVD) growth to the monolithic integration of a buried ridge stripe (BRS) type distributed feedback (DFB) laser and a passive waveguide is described. The vapor phase properties have been used to butt-join a passive guide layer and an active laser layer grown successively, without growth pause. CW threshold currents as low as 17 mA have been achieved for a 1.3 mm long monolithic device. The coupling coefficient is in excess of 60%.<<ETX>>
Electronics Letters | 1989
J. Charil; S. Slempkes; Didier Robein; C. Kazmierski; J.C. Bouley
Electronics Letters | 1991
A. Ougazzaden; R. Mellet; Y. Gao; C. Kazmierski; Didier Robein; A. Mircea
Electronics Letters | 1994
H. Nakajima; J. Charil; S. Slempkes; Didier Robein; A. Gloukhian; J. Landreau; B. Pierre; J.C. Bouley
Electronics Letters | 1991
M. Blez; C. Kazmierski; M. Quillec; Didier Robein; M. Allovon; A. Gloukhian; B. Sermage
Electronics Letters | 1991
V. Hornung; D. Remiens; Didier Robein; A. Gloukhian; M. Carre