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Featured researches published by Didier Robein.


IEEE Journal of Selected Topics in Quantum Electronics | 1995

1.5-/spl mu/m DFB lasers with new current-induced gain gratings

C. Kazmierski; Didier Robein; D. Mathoorasing; A. Ougazzaden; Marcel Filoche

We introduce a new concept for gratings, based on a spatial carrier modulation, induced by current for optoelectronic devices. The concept is experimentally tested on gain coupled lasers, showing predicted features as high-power, low-linewidth, and length-independent coupling length product. >


IEEE Journal of Quantum Electronics | 1991

High static performance GaInAs-GaInAsP SCH MQW 1.5 mu m wavelength buried ridge stripe lasers

C. Kazmierski; A. Ougazzaden; M. Blez; Didier Robein; Jean Landreau; B. Sermage; Jean Claude Bouley; A. Mircea

The potential advantages of GaInAs/InP multiquantum well (MQW) structures over bulk material for improving the static properties of buried heterostructure (BH) lasers are demonstrated. Using a highly uniform metalorganic vapor phase epitaxy (MOVPE) growth, an optimized simple separate confinement heterostructure (SCH) MQW layer stack, and the buried ridge stripe (BRS) structure, improved static performances over any bulk or unstrained MQW long wavelength laser were obtained. An extremely low threshold below 2 mA was obtained in short cavity lasers, the threshold current was only 10.6 mA and 110 mW continuous-wave (CW) maximum optical power was observed using 90%/10% reflectivity coatings. >


Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications | 1991

Buried-ridge-stripe lasers monolithically integrated with butt-coupled passive waveguides for OEIC

D. Remiens; V. Hornung; B. Rose; Didier Robein

Monolithic integration between an active and a passive waveguide directly buttjointed in a single step of MOCVD is demonstrated at 1. 5pm. The growth behavior on a patterned InP substrate is studied by using a periodic structure of GaInAs or InGaAsP/InP layers. Buried Ridge Stripe (B. R. S. ) structures consisting of a 25Ojjm long active region and 13OOjm long passive waveguide exhibit 25 mA threshold current 60 coupling coefficient and an optical output power in excess of 5 mW is measured at the passive waveguide. The monolithic integration of a distributed feedback laser coupled to a passive waveguide with this new concept is investigated.


international semiconductor laser conference | 1994

Influence of gain saturation on the tuning range and tuning rate of three-contact DFB lasers and amplifier-filters: modelling and experiments

H. Nakajima; J. Charil; S. Slempkes; A. Gloukhian; Didier Robein; D. Mathoorasing; S. Cherif; J.C. Bouley

Summary form only given. The aim of the paper is to show the impact of the modal gain saturation on the tuning-range as well as the tuning rate of three-contact DFB lasers (and filters) at single current modulation. Taking into account the modal gain saturation due to gain-curve-shift, we have demonstrated theoretically and experimentally the feasibility of a wide wavelength tuning (2.5 nm) and a high tuning rate with a small power change by single (lateral) current tuning in the case of three-contact DFB lasers and filters.


international conference on indium phosphide and related materials | 1991

MOCVD growth on nonplanar substrate for high performance monolithic integration of a buried ridge stripe DFB laser butt-joint to a passive waveguide

V. Hornung; D. Remiens; Didier Robein; A. Gloukhian; J. Landreau

An application of nonplanar metalorganic chemical vapor deposition (MOCVD) growth to the monolithic integration of a buried ridge stripe (BRS) type distributed feedback (DFB) laser and a passive waveguide is described. The vapor phase properties have been used to butt-join a passive guide layer and an active laser layer grown successively, without growth pause. CW threshold currents as low as 17 mA have been achieved for a 1.3 mm long monolithic device. The coupling coefficient is in excess of 60%.<<ETX>>


Electronics Letters | 1989

Extremely low threshold operation of 1.5 mu m GaInAsP/InP buried ridge stripe lasers

J. Charil; S. Slempkes; Didier Robein; C. Kazmierski; J.C. Bouley


Electronics Letters | 1991

State of the art 1.3 mu m lasers by atmospheric pressure MOVPE using tertiary butylphosphine

A. Ougazzaden; R. Mellet; Y. Gao; C. Kazmierski; Didier Robein; A. Mircea


Electronics Letters | 1994

Absorption-controlled tunable DFB amplifier-filters

H. Nakajima; J. Charil; S. Slempkes; Didier Robein; A. Gloukhian; J. Landreau; B. Pierre; J.C. Bouley


Electronics Letters | 1991

First DFB GRIN-SCH GaInAs/AlGaInAs 1.55 mu m MBE MQW active layer buried ridge structure lasers

M. Blez; C. Kazmierski; M. Quillec; Didier Robein; M. Allovon; A. Gloukhian; B. Sermage


Electronics Letters | 1991

Simple approach for monolithic integration of DFB laser and passive waveguide

V. Hornung; D. Remiens; Didier Robein; A. Gloukhian; M. Carre

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