Dietolf Seippel

Evolution on SoC Integration: GSM Baseband-Radio in 0.13

GSM baseband-radios system-on-chip (SoC) fabricated in CMOS technology are well established on the market. The next evolutionary step on the proceeding integration path is the extension of the baseband-radio functionality by further integration of power-management-unit (PMU) functionality. This PMU of a mobile phone is normally realized as a separate chip. The integration of the PMU promises lowest phone cost, eases PCB design, reduces phone development time, and enables overall system optimization. However, several integration challenges have to be tackled. An SoC is presented for which the aforementioned challenges were successfully managed. The achieved performance will be demonstrated with corresponding measurement results.

\mu{\hbox {m}}

A new low-cost concept for a system-on-chip Bluetooth solution is proposed in this paper. The single chip includes all necessary baseband and RF parts to achieve full Bluetooth functionality and is implemented in a standard 0.25-/spl mu/m CMOS technology. The two-point modulation /spl Sigma//spl Delta/ fractional N phase-locked loop achieves a phase noise of -124 dBc/Hz at 3-MHz offset. The sensitivity of the embedded low-IF receiver is measured to be -82 dBm at a bit error rate of 0.1%. The power supply voltages for the digital and analog parts are internally regulated to 2.65 V. The maximum current consumption of the analog part is 60 mA.

CMOS Extended by Fully Integrated Power Management Unit

A low power, fully integrated 2.4 GHz fractional-N frequency synthesizer for Bluetooth in a 0.25 /spl mu/m CMOS technology is presented. The complete synthesizer, including a fully integrated VCO, consumes 22 mA from a 2.5 V supply. The integrated VCO reaches a phase noise of -133 dBc/Hz at 3 MHz. The synthesizer is designed for a direct /spl Sigma//spl Delta/-modulation of the PLL.

A low-IF RX two-point /spl Sigma//spl Delta/-modulation TX CMOS single-chip Bluetooth solution

A GSM-compliant baseband radio with integrated power-management unit (PMU) is fabricated in a 0.13μm CMOS process. Challenges due to additional integration of the PMU, including electrical and thermal cross-coupling and high-voltage requirements are addressed.

A fully integrated CMOS frequency synthesizer for Bluetooth

Since CMOS GSM-radio-transceiver are established on the market a few years ago the next evolutionary step is a complete GSM/GPRS baseband-RF-SoC integration. It promises lowest production cost, easiest board integration and the highest flexibility in system optimization. However, crosstalk from digital into analog and RF blocks is a severe constraint. In this paper we have presented the main cross coupling effects and challenges for the RF integration. Potential countermeasures to fulfil GSM performance are discussed. The achieved RF performance was demonstrated with measurement results

A GSM Baseband Radio in 0.13μm CMOS with Fully Integrated Power-Management

Deep submicron CMOS technologies enable sophisticated system-on-chip technologies, moving beyond traditional integration of digital functionality to include mixed-signal, RF, and power management capabilities. New levels of integration bring with them additional challenges that need to be addressed such as the cross-coupling of noise from digital switching circuits to sensitive analog/RF blocks, and the handling of high voltages by the PMU with decreasing maximum gate/drain-source voltages. This work describes SoC integration in local area wireless (e.g., Bluetooth) as well as in cellular applications (e.g., GSM).

GSM/GPRS single-chip in 130nm CMOS: challenges on RF for SoC integration

A system on chip, providing all functions needed for a GSM/GPRS mobile phone, is presented. Because of the high integration level, one can build up ultra-low cost and ultra-small size mobile phones.