Dimitar Dochev

A Swedish heterodyne facility instrument for the APEX telescope

Aims. In March 2008, the APEX facility instrument was installed on the telescope at the site of Lliano Chajnantor in northern Chile. The main objective of the paper is to introduce the new instrument to the radio astronomical community. It describes the hardware configuration and presents some initial results from the on-sky commissioning. Methods. The heterodyne instrument covers frequencies between 211 GHz and 1390 GHz divided into four bands. The first three bands are sideband-separating mixers operating in a single sideband mode and based on superconductor-insulator-superconductor (SIS) tunnel junctions. The fourth band is a hot-electron bolometer, waveguide balanced mixer. All bands are integrated in a closedcycle temperature-stabilized cryostat and are cooled to 4 K. Results. We present results from noise temperature, sideband separation ratios, beam, and stability measurements performed on the telescope as a part of the receiver technical commissioning. Examples of broad extragalactic lines are also included.

A 1.3-THz Balanced Waveguide HEB Mixer for the APEX Telescope

In this paper, we report about the development, fabrication, and characterization of a balanced waveguide hot electron bolometer (HEB) receiver for the Atacama Pathfinder EXperiment telescope covering the frequency band of 1.25-1.39 THz. The receiver uses a quadrature balanced scheme and two HEB mixers, fabricated from 4- to 5-nm-thick NbN film deposited on crystalline quartz substrate with an MgO buffer layer in between. We employed a novel micromachining method to produce all-metal waveguide parts at submicrometer accuracy (the main-mode waveguide dimensions are 90 times 180 mum ). We present details on the mixer design and measurement results, including receiver noise performance, stability and ldquofirst-lightrdquo at the telescope site. The receiver yields a double-sideband noise temperature averaged over the RF band below 1200 K, and outstanding stability with a spectroscopic Allan time more than 200 s.

A strong reduction in the density of near-interface traps at the SiO2∕4H‐SiC interface by sodium enhanced oxidation

This paper demonstrates how sodium enhanced oxidation of Si face 4H‐SiC results in removal of near-interface traps at the SiO2∕4H‐SiC interface. These detrimental traps have energy levels close to the SiC conduction band edge and are responsible for low electron inversion channel mobilities (1–10cm2∕Vs) in Si face 4H‐SiC metal-oxide-semiconductor field effect transistors. The presence of sodium during oxidation increases the oxidation rate and suppresses formation of these near-interface traps resulting in high inversion channel mobility of 150cm2∕Vs in such transistors. Sodium is incorporated by using carrier boats made of sintered alumina during oxidation or by deliberate sodium contamination of the oxide during the formation of the SiC∕SiO2 interface.

Aging- and annealing-induced variations in Nb/Al–AlOx/Nb tunnel junction properties

In this paper, we present studies of room temperature aging and annealing of Nb/Al–AlOx/Nb tunnel junctions with the size of 2–3 μm2. We observed a noticeable drop of junction normal resistance Rn unusually combined with increase in subgap resistance Rj as a result of aging. Variation in both Rn and Rj are subject to the junction size effect. An effect of aging history on the junction degradation after consequent annealing was discovered. Discussion and interpretation of the observed phenomena are presented in terms of structural ordering and reconstruction in the AlOx layer, driven by diffusion flows enhanced due to stress relaxation processes in the Al layer interfacing the AlOx layer.

Facility heterodyne receiver for the Atacama Pathfinder Experiment Telescope

APEX, the Atacama PAthflnder Experiment (APEX) Telescope, is a partnership between Max Planck Institut fur Radioastronomie (in collaboration with Astronomisches Institut Ruhr Universitat Bochum (AIRUB)), Onsala Space Observatory and the European Southern Observatory. The telescope antenna, supplied by VERTEX Antennentechnik, is a 12 m antenna with a 17 mum rms surface accuracy operating at the Atacama Desert in the Chilean Andes at a 5100 m altitude. The APEX heterodyne facility receiver is placed in the telescope Nasmyth Cabin A. The receivers are coupled to the antenna via relay optics allowing the operation of two different Pi-type instruments and a 6-channel facility heterodyne receiver to cover approximately 210 - 1500 GHz frequency range while providing frequency independent illumination of the secondary. In this report, we present details on the optics for the APEX facility heterodyne receiver and details of its design. The report includes a very brief review of the APEX Band 1, 211 - 270 GHz, Band 2, 270 - 370 GHz, Band 3, 385 - 500 GHz, all based on sideband separation SIS mixer technology and Band T2, 1250 - 1390 GHz, a balanced waveguide HEB mixer, all developed by GARD.

Sodium Enhanced Oxidation of Si-Face 4H-SiC: A Method to Remove Near Interface Traps

We demonstrate how sodium enhanced oxidation of Si face 4H-SiC results in removal of near-interface traps at the SiO2/4H-SiC interface. These detrimental traps have energy levels close to the SiC conduction band edge and are responsible for low electron inversion channel mobilities (1-10 cm2/Vs) in Si face 4H-SiC metal-oxide-semiconductor field effect transistors. The presence of sodium during oxidation increases the oxidation rate and suppresses formation of these nearinterface traps resulting in high inversion channel mobility of 150 cm2/Vs in such transistors. Sodium can be incorporated by using carrier boats made of sintered alumina during oxidation or by deliberate sodium contamination of the oxide during formation of the SiC/SiO2 interface.

Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the superconducting transition onset temperature (TC) for the best specimen is 11.8 K. Using these epitaxial NbN films, we have fabricated submicron-size hot-electron bolometer (HEB) devices on 3C-SiC/Si substrate and performed their complete DC characterization. The observed critical temperature TC = 11.3 K and critical current density of about 2.5 MA cm − 2 at 4.2 K of the submicron-size bridges were uniform across the sample. This suggests that the deposited NbN films possess the necessary homogeneity to sustain reliable hot-electron bolometer device fabrication for THz mixer applications.

Terahertz components packaging using integrated waveguide technology

We present an integrated waveguide based packaging solution compatible with different THz component technologies, both for room temperature and cryogenic operations, employing space-qualified wire-bonding for electrical contacts. The proposed waveguide packaging relies on the combination of all-metal micro-machined THz waveguide and active component chip layouts suitable for the realization of systems from 200 up to 5000 GHz. It provides possibility of making 3-dimensional structures via facilitating of multi-level (layered) designs. The surface roughness of the fabricated THz waveguide structure was demonstrated to be 20 nm, while a 2 µm alignment accuracy of the active component chip was verified.

Design and performance of ALMA band 5 receiver cartridge

ALMA, Atacama Large Millimetre Array, covers the frequency band from 30 GHz to 960 GHz in ten separate frequency bands. We present here the design and performance of the ALMA Band 5 receiver cartridge that covers 163–211 GHz. The Band 5 receiver shows the state-of-the-art performance with the noise temperature below 65K (SSB) and sideband rejection above 12 dB over 80% of the RF band.

Superconducting IF biasing circuit for low-noise cryogenic applications

A planar superconducting circuit designed for use in low-noise cryogenic applications is presented. The circuit is a bias-T combined with a 4–8 GHz impedance matching circuitry, which employs entirely planar design with a novel layout. The proposed and tested circuitry is intended to be used with a SIS mixer and incorporates a double section transformer based on microstrip line technology with a total impedance transformation of 5:1 within the frequency band. One of the transformer sections employs a three-line coupled line, which also serves as a DC block capacitor. The microstrip lines were manufactured using superconducting Nb metallization, which provides a conduction loss-free solution at the operation temperature of 4 K. S-parameter measurements at 4 K temperature were performed and found to be in a good agreement with the simulations. The device measured return loss is better than −10 dB within the frequency band. Furthermore, the circuit was tested as a part of 385 – 500 GHz double sideband heterodyne SIS receiver demonstrating a flat noise temperature response of 80 – 90 K over the entire IF band of 4 – 8 GHz.