Dimitrios Kazazis

RESCAN: an actinic lensless microscope for defect inspection of EUV reticles

Abstract. Actinic mask defect inspection is an essential process step for the implementation of extreme ultraviolet (EUV) lithography in high-volume manufacturing. The main challenges for any mask defect inspection platform are resolution, sensitivity, and throughput. The reflective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic patterned mask inspection capabilities for defects and patterns with high resolution and high throughput for node 7 and beyond. Namely, the goal of the RESCAN project is to develop a tool capable of inspecting an EUV reticle in 7 h and detect mask defects down to a size of 10  nm×10  nm. The lensless imaging concept allows overcoming the resolution limitations due to the numerical aperture and lens aberrations of conventional mask imaging systems. With the increasing availability of computational power and the refinement of iterative phase reconstruction algorithms, lensless imaging became a powerful tool to synthesize the complex amplitude of the reticle image providing us also with extremely valuable information about phase and mask three-dimensional effects. Here, we present a brief description of the current prototype of the RESCAN platform and illustrate a few experimental examples of programmed defect detection.

Extreme ultraviolet patterning of tin-oxo cages

We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages: molecular building blocks that are known to turn insoluble upon EUV exposure, thus having the properties of a negative tone photoresist. In this work, we focus on contrast curves of the materials using open-frame EUV exposures and their patterning capabilities using EUV interference lithography. It is shown that baking steps, such as post-exposure baking (PEB) can significantly affect both the sensitivity and contrast in the open-frame experiments as well as the patterning experiments. In addition, we show that the exchange of the anions of the cage can make a difference in terms of their physical properties. Our results demonstrate the significance of process optimization while evaluating the resist performance of novel molecular materials.

Experimental evaluation of the impact of EUV pellicles on reticle imaging

The purpose of EUV pellicles is to protect the surface of EUV lithography masks from particle contamination. Currently several pellicle prototypes are being developed. It is important to ensure that the optical characteristics of the pellicle membrane do not critically affect the reticle image quality. We present here a study of the impact of a few selected EUV pellicle prototypes on the quality and the contrast of the reticle image obtained with an actinic lensless microscope.

High-throughput defect inspection for arbitrarily shaped EUV absorber patterns (Conference Presentation)

In this paper, we present a method for accurate EUV mask inspection of arbitrarily shaped absorber patterns using lensless imaging methods. With our reflective-mode EUV mask scanning lensless imaging microscope (RESCAN), we have imaged a mask with programmed defects and present here the computed defect map for both die-to-die and die-to-database pattern inspection. The signal-to-noise ratio in both cases was high enough to clearly isolate the defect from the structures (~13 for die-to-die and ~7 for die-to-database inspection). To reach the high-throughput required by industry, we implemented an extended ptychographic algorithm that allows for continuous scanning of the sample and subsequent deconvolution of the distortions in the incident illumination that are due to the fast stage movement. We will show how this algorithm was implemented on a multi-GPU platform for maximum performance that will eventually allow us to reach the final goal of 7 hours scan time for a full mask.

Improving the resolution and throughput of achromatic Talbot lithography

High-resolution patterning of periodic structures over large areas has several applications in science and technology. One such method, based on the long-known Talbot effect observed with diffraction gratings, is achromatic Talbot lithography (ATL). This method offers many advantages over other techniques, such as high resolution, large depth-of-focus, and high throughput. Although the technique has been studied in the past, its limits have not yet been explored. Increasing the efficiency and the resolution of the method is essential and might enable many applications in science and technology. In this work, the authors combine this technique with spatially coherent and quasimonochromatic light at extreme ultraviolet (EUV) wavelengths and explore new mask design schemes in order to enhance its throughput and resolution. They report on simulations of various mask designs in order to explore their efficiency. Advanced and optimized nanofabrication techniques have to be utilized to achieve high quality and efficient masks for ATL. Exposures using coherent EUV radiation from the Swiss light source have been performed, pushing the resolution limits of the technique for dense hole or dot patterning down to 40 nm pitch. In addition, through extensive simulations, alternative mask designs with rings instead of holes are explored for the efficient patterning of hole/dot arrays. They show that these rings exhibit similar aerial images to hole arrays, while enabling higher efficiency and thereby increased throughput for ATL exposures. The mask designs with rings show that they are less prone to problems associated with pattern collapse during the nanofabrication process and therefore are promising for achieving higher resolution.High-resolution patterning of periodic structures over large areas has several applications in science and technology. One such method, based on the long-known Talbot effect observed with diffraction gratings, is achromatic Talbot lithography (ATL). This method offers many advantages over other techniques, such as high resolution, large depth-of-focus, and high throughput. Although the technique has been studied in the past, its limits have not yet been explored. Increasing the efficiency and the resolution of the method is essential and might enable many applications in science and technology. In this work, the authors combine this technique with spatially coherent and quasimonochromatic light at extreme ultraviolet (EUV) wavelengths and explore new mask design schemes in order to enhance its throughput and resolution. They report on simulations of various mask designs in order to explore their efficiency. Advanced and optimized nanofabrication techniques have to be utilized to achieve high quality and e...

Progress in multi-trigger resists for EUV lithography (Conference Presentation)

Recent tool and source advances make the introduction of EUV lithography into high volume manufacturing in the very near future inevitable. Whilst traditional chemically amplified resists will likely support the initial insertion, a wide range of materials options are being examined for future nodes, aiming to identify a photoresist that simultaneously meets the resolution, line edge roughness and sensitivity requirement. However, this issue represents a fundamental trade-off in lithography (the RLS triangle) and it is difficult to overcome. For instance, addition of quenchers in chemically amplified resists reduces the acid diffusion length and increases the resolution of the patterned features, but decreases the sensitivity, and impacts on material stochastics affecting the line edge roughness. In this study we present results obtained with Irresistible Materials’ Multi Trigger Resist. The multi trigger concept enables high sensitivity patterning but also incorporates a quenching behaviour into the chemistry to improve resolution. The standard material consists of a base molecule – EX2, a crosslinker and a PAG. EUV light generates photoacids, as with a traditional chemically amplified resist, but the response of the resist matrix implements a logic-type function. Where two resist molecules are activated by two acids, in close proximity to each other, then the resist molecules will react catalytically and release both acids. When a resist molecule encounters a single acid in isolation then it will hold on to the acid, without itself reacting, thus removing the acid from the reaction. This behaviour allows a high sensitivity response at a certain dose threshold but turns the resist response off much more quickly (as a 2nd order reaction) as the dose decreases, leading to sharper lines and lower line width roughness. We present results where the molecular structure was modified to create enhanced versions of the standard resin. This will offer higher cross-linking capability and better mechanical strength to reduce the LER, wiggling and defects, and thus ultimately higher resolution. We present the lithography performance of the MTR2 resist series which shows 16nm half pitch lines patterned with a dose of 38mJ/cm2, giving a LER of 3.7 nm when patterned using an NXE3300. We also present a new resist formulation using a crosslinker with a high opacity non-metallic atom attached, which has patterned 13nm lines at the Paul Scherrer Institute (14nm half pitch) and also 13nm lines on the MET tool at Berkeley (20nm half pitch) with an LER of 4.24nm. We also present the lithographic performance of the MTR3 resist series which is 10% faster than the MTR2 series when patterning with EUV lithography at PSI, and has achieved a 2.95nm LER at 16nm half pitch, and 3.80nm LER at 14nm half pitch at PSI. Performance across various process conditions is also discussed, including process conditions to reduce wiggling and improve LER.

Studying resist performance for contact holes printing using EUV interference lithography

Extreme ultraviolet interference lithography (EUV-IL) is relatively simple and inexpensive technique that can pattern high resolution line/space and has been successfully used for the resist performance testing. While the aerial image in EUV-IL formed by two beams is straightforward to understand and has contrast of 1, the aerial image formed by four beams providing contact holes (CHs) is rather complicated. The phases of the interfering beams as well as by the polarization play big roles in the image of the interference pattern and its contrast. To understand thoroughly the formation of CH, we investigate theoretically polarization effect on the aerial image generated with two and four-beam interference. We show the coherent four-beam interference provides the highest contrast (1) with zero initial phase. But the interference pattern strongly depends on the phase difference and switch from one to another when the phase difference between the two pairs of gratings is π/2. Consequently, the contrast also decreases and interference pattern could end with random form when the relative phase of the beams cannot be fully controlled. We propose an incoherent four-beam interference model by intentionally designing the grating with a slightly different pitch to create an optical path difference that is longer than the coherence length of the EUV light (13.5 nm). We also discuss the polarization-induced contrast loss. We verify our analytical model by printing both positive tone chemically amplified resist (CAR) and a negative tone inorganic resist.

Phase defect inspection on EUV masks using RESCAN

As extreme ultraviolet (EUV) lithography is entering the high-volume manufacturing (HVM) phase, the ability to identify printable defects on EUV reticles becomes increasingly important to achieve the required wafer yield. However, no commercially available tool exists today for actinic patterned mask inspection (APMI). RESCAN is an APMI tool based on scanning coherent diffraction imaging (SCDI) under development at the Paul Scherrer Institut. In the last years, using RESCAN, we have demonstrated actinic identification of absorber defects on mask down to 36 nm size, and through-pellicle defect inspection. In this paper, we address a very critical but hitherto not reported feature of an APMI tool, namely the identification and characterization of phase defects on a patterned mask. Phase defects could be due to imperfections on the blank substrate leading to modification of the multilayer topology or due to particles embedded within the multilayer itself. Independent of the origin, the wave exiting the multilayer surface will have domains of phase variations as it propagates in the three-dimensional reticle stack. Mapping the exit wave that leave the EUV reticle both in amplitude and phase would be of paramount importance towards accurately predicting the EUV aerial images. Exploiting the amplitude and phase maps provided by SCDI, we use RESCAN for phase contrast imaging and to characterize programmed phase defects in a hybrid absorber-phase sample in a lens-less scheme, demonstrating the capability of the method and the tool.

Ultra-sensitive EUV resists based on acid-catalyzed polymer backbone breaking

The main target of the current work was to develop new sensitive polymeric materials for lithographic applications, focusing in particular to EUV lithography, the main chain of which is cleaved under the influence of photogenerated acid. Resist materials based on the cleavage of polymer main chain are in principle capable to create very small structures, to the dimensions of the monomers that they consist of. Nevertheless, in the case of the commonly used nonchemically amplified materials of this type issues like sensitivity and poor etch resistance limit their areas of application, whereas inadequate etch resistance and non- satisfactory process reliability are the usual problems encountered in acid catalysed materials based on main chain scission. In our material design the acid catalyzed chain cleavable polymers contain very sensitive moieties in their backbone while they remain intact in alkaline ambient. These newly synthesized polymers bear in addition suitable functional groups for the achievement of desirable lithographic characteristics (thermal stability, acceptable glass transition temperature, etch resistance, proper dissolution behavior, adhesion to the substrate). Our approach for achieving acceptable etch resistance, a main drawback in other main chain cleavable resists, is based on the introduction of polyaromatic hydrocarbons in the polymeric backbone, whereas the incorporation of an inorganic component further enhances the etch resistance. Single component systems can also be designed following the proposed approach by the incorporation of suitable PAGs and base quencher molecules in the main chain. Resist formulations based on a random copolymer designed according to the described rules evaluated in EUV exhibit ultrahigh sensitivity, capability for high resolution patterning and overall processing characteristics that make them strong candidates for industrial use upon further optimization.

Through-pellicle inspection of EUV masks

RESCAN is a metrology platform, currently under development at Paul Scherrer Institut to provide actinic inspection capability for EUV reticles. It is a lensless microscope and its defect detection protocol is based on coherent diffraction imaging. One of the key features of an actinic pattern inspection tool is the ability to operate on reticles protected by an EUV pellicle. Thanks to the absence of imaging optics in close proximity of the sample, there are no geometrical constraints preventing the inspection of a pellicle-protected reticle in RESCAN. Nevertheless, the defect detection sensitivity depends on the quality of the reconstructed images and it is therefore important to assess if and how these are affected by the presence of an EUV pellicle. We report here the results of an evaluation of the effects of different types of EUV pellicles on the reconstructed images. We observed that high-absorption silicon nitride pellicles significantly reduce the imaging quality whereas in the case of the CNT-based pellicles the imaging performance was not affected. We also observed no damage of the CNT-based pellicle. To our knowledge, this work is the first successful attempt to perform mask inspection through EUV pellicles.