Patrick Helfenstein

Highly collimated electron beams from double-gate field emitter arrays with large collimation gate apertures

Electron collimation in field emitter arrays with electron extraction gate and collimation gate electrodes is studied with the goal to develop a high-brightness high current cathode. Using metallic field emitter arrays prepared by the molding method, we fabricated a stacked double-gate device with the two gates differing in diameter by a process utilizing focused-ion beam milling. We measured the field-emission beam characteristics and demonstrated a reduction of the emission angle by a factor of 7.1±0.8 with minimal emission current decrease under collimating conditions, resulting in a current density increase by a factor of 13.9±1.0.Electron collimation in field emitter arrays with electron extraction gate and collimation gate electrodes is studied with the goal to develop a high-brightness high current cathode. Using metallic field emitter arrays prepared by the molding method, we fabricated a stacked double-gate device with the two gates differing in diameter by a process utilizing focused-ion beam milling. We measured the field-emission beam characteristics and demonstrated a reduction of the emission angle by a factor of 7.1±0.8 with minimal emission current decrease under collimating conditions, resulting in a current density increase by a factor of 13.9±1.0.

Electron beam collimation with a 40 000 tip metallic double-gate field emitter array and in-situ control of nanotip sharpness distribution

The generation of highly collimated electron beams from a double-gate field emitter array with 40000 metallic tips and large collimation gate apertures is reported. Field emission beam measurements demonstrated the reduction of the beam envelope down to the array size by applying a negative potential to the on-chip gate electrode for the collimation of individual field emission beamlets. Owing to the optimized gate structure, the concomitant decrease of the emission current was minimal, leading to a net enhancement of the current density. Furthermore, a noble gas conditioning process was successfully applied to the double-gate device to improve the beam uniformity in-situ with orders of magnitude increase of the active emission area. The results show that the proposed double-gate field emission cathodes are promising for high current and high brightness electron beam applications such as free-electron lasers and THz power devices.

Field-Emission Characteristics of Molded Molybdenum Nanotip Arrays With Stacked Collimation Gate Electrodes

Double-gate field-emission characteristics of metallic field-emitter-array (FEA) cathodes fabricated by molding with stacked collimation gate electrodes with planar end plane are reported. The collimation of field-emission electron beam with minimal reduction of emission current is demonstrated when a negative bias is applied to the collimation gate, whereas when the two electrodes are at the same potential, the emission characteristic of the double-gate device is the same as that of the single-gate device that shows an emission current of ~1 mA from 40 × 40 tip arrays. Results indicate that the device structure of the fabricated double-gate FEAs is promising for high-brilliance cathode applications.

Collimated Field Emission Beams from Metal Double-Gate Nanotip Arrays Optically Excited via Surface Plasmon Resonance

The generation of collimated electron beams from metal double-gate nanotip arrays excited by near infrared laser pulses is studied. Using electromagnetic and particle tracking simulations, we showed that electron pulses with small rms transverse velocities are efficiently produced from nanotip arrays by laser-induced field emission with the laser wavelength tuned to surface plasmon polariton resonance of the stacked double-gate structure. The result indicates the possibility of realizing a metal nanotip array cathode that outperforms state-of-the-art photocathodes.

Fabrication of metallic double-gate field emitter arrays and their electron beam collimation characteristics

The fabrication of double-gate metallic field emitter arrays with large collimation gate apertures and their field emission beam characteristics are reported. The device fabrication steps, including the molding technique for array fabrication, the electron extraction gate fabrication by the self-aligned resist etch-back method, and the fabrication of the collimation gate electrode using a focused ion beam assisted method are described in detail. The experimental results of 2 × 2 tip arrays with the proposed double-gate structure demonstrate an order of magnitude enhancement in beam brightness with minimal current loss. A similarly high beam brightness enhancement was achieved with a 20 × 20 tip array device, showing the scalability of the proposed structure. The observation of improved current-voltage characteristics with the 20 × 20 tip array is ascribed to the difference in gate aperture shape. The possibility of further improving the beam characteristics of double-gate field emitter arrays and the redu...

Scanning coherent diffractive imaging methods for actinic extreme ultraviolet mask metrology

Abstract. For the successful implementation of extreme ultraviolet (EUV) lithography in the upcoming technology nodes, a major challenge to overcome is the stable and reliable detection and characterization of mask defects. We have recently presented a reflective mode EUV mask scanning lensless imaging tool (RESCAN) which was installed at the XIL-II beamline of the swiss light source and showed reconstructed aerial images of test patterns on EUV masks. RESCAN uses scanning coherent diffractive imaging (SCDI) methods to obtain actinic aerial images of EUV photomasks and was designed for 80 nm onmask resolution. Our SCDI algorithm reconstructs the measured sample by iteratively solving the phase problem using overdetermined diffraction data gathered by scanning across the specimen with a finite illumination. It provides the phase and amplitude aerial images of EUV photomasks with high resolution without the need to use high numerical aperture (NA) lenses. Contrary to scanning microscopy and full-field microscopy, where the resolution is limited by the spot size or NA of the lens, the achievable resolution with our method depends on the detector noise and NA of the detector. To increase the resolution of our tool, we upgraded RESCAN with a detector and algorithms. Here, we present the results obtained with the tool that is capable of up to 40-nm onmask resolution. We believe that the realization of our prototype marks a significant step toward overcoming the limitations imposed by methods relying on imaging optics and shows a viable solution for actinic mask metrology.

RESCAN: an actinic lensless microscope for defect inspection of EUV reticles

Abstract. Actinic mask defect inspection is an essential process step for the implementation of extreme ultraviolet (EUV) lithography in high-volume manufacturing. The main challenges for any mask defect inspection platform are resolution, sensitivity, and throughput. The reflective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic patterned mask inspection capabilities for defects and patterns with high resolution and high throughput for node 7 and beyond. Namely, the goal of the RESCAN project is to develop a tool capable of inspecting an EUV reticle in 7 h and detect mask defects down to a size of 10  nm×10  nm. The lensless imaging concept allows overcoming the resolution limitations due to the numerical aperture and lens aberrations of conventional mask imaging systems. With the increasing availability of computational power and the refinement of iterative phase reconstruction algorithms, lensless imaging became a powerful tool to synthesize the complex amplitude of the reticle image providing us also with extremely valuable information about phase and mask three-dimensional effects. Here, we present a brief description of the current prototype of the RESCAN platform and illustrate a few experimental examples of programmed defect detection.

Scanning scattering contrast microscopy for actinic EUV mask inspection

Actinic mask inspection for EUV lithography with targeted specification of sensitivity and throughput is a big challenge and effective solutions are needed. We present a novel method for actinic mask inspection, i.e. scanning scattering contrast microscopy. In this method the EUV mask is scanned with a beam of relatively small spot size and the scattered light is recorded with a pixel detector. Since the mask layout is known, the scattering profile of a defect-free mask at the detector can be calculated. The signal between the measured and calculated signal provides the deviation between the real mask and its ideal counterpart and a signal above a certain threshold indicates the existence of a defect within the illumination area. Dynamic software filtering helps to suppress strong diffraction from defect free structures and allows registration of faint defects with high sensitivity. With the continuous scan of the whole mask area, a defect map can be obtained with high throughput. Therefore, we believe that this method has the potential of providing an effective solution for actinic mask inspection. Here we discuss the basic principles of the method, present proof-of-principle experiments, describe the basic components of a feasible stand-alone tool and present early results of the performance estimations of such a tool.

Electron beam collimation from an all-metal double-gate 40 000 nanotip array: Improved emission current and beam uniformity upon neon gas conditioning

In this study, the authors characterized field emission for stacked-double-gate all-metal field emitter arrays (FEAs) consisting of 40 000 nanotips. After careful conditioning of the FEAs under ultrahigh vacuum and in low-pressure neon gas ambient, the authors were able to produce a highly collimated beam with a current of ∼50 μA which showed an improved beam homogeneity. The beam rms radius reduced by a factor 10 and the transverse energy spread was reduced to well below 1 eV.

Influence of beam uniformity on the transverse emittance of gated field emitter arrays

Transverse emittance of field emission beam generated from single-gate FEAs are experimentally studied. Although as fabricated FEAs exhibit highly granular beam, by applying the Ne-gas conditioning method, uniform FEA beam was realized and its emittance was measured and compared with the previously measured emittance values for granular beams.