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Dive into the research topics where Dipankar Kalita is active.

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Featured researches published by Dipankar Kalita.


Advanced Functional Materials | 2014

Homogeneous Optical and Electronic Properties of Graphene Due to the Suppression of Multilayer Patches During CVD on Copper Foils

Zheng Han; Amina Kimouche; Dipankar Kalita; Adrien Allain; Hadi Arjmandi-Tash; Antoine Reserbat-Plantey; Laëtitia Marty; Sébastien Pairis; Valérie Reita; Nedjma Bendiab; Johann Coraux; Vincent Bouchiat

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.


Physical Review B | 2015

Interplay between Raman shift and thermal expansion in graphene: Temperature-dependent measurements and analysis of substrate corrections

S. Linas; Y. Magnin; B. Poinsot; O. Boisron; G. D. Förster; V. Martinez; R. Fulcrand; F. Tournus; V. Dupuis; F. Rabilloud; L. Bardotti; Zheng Han; Dipankar Kalita; Vincent Bouchiat; F. Calvo

Measurements and calculations have shown significant disagreement regarding the sign and variations of the thermal expansion coefficient (TEC) of graphene α(T). Here we report dedicated Raman scattering experiments conducted for graphene monolayers deposited on silicon nitride substrates and over the broad temperature range 150–900 K. The relation between those measurements for the G band and the graphene TEC, which involves correcting the measured signal for the mismatch contribution of the substrate, is analyzed based on various theoretical candidates for α(T). Contrary to calculations in the quasiharmonic approximation, a many-body potential reparametrized for graphene correctly reproduces experimental data. These results indicate that the TEC is more likely to be positive above room temperature.


Frontiers in Neuroscience | 2017

Recording Spikes Activity in Cultured Hippocampal Neurons Using Flexible or Transparent Graphene Transistors

Farida Veliev; Zheng Han; Dipankar Kalita; Anne Briançon-Marjollet; Vincent Bouchiat; Cécile Delacour

The emergence of nanoelectronics applied to neural interfaces has started few decades ago, and aims to provide new tools for replacing or restoring disabled functions of the nervous systems as well as further understanding the evolution of such complex organization. As the same time, graphene and other 2D materials have offered new possibilities for integrating micro and nano-devices on flexible, transparent, and biocompatible substrates, promising for bio and neuro-electronics. In addition to many bio-suitable features of graphene interface, such as, chemical inertness and anti-corrosive properties, its optical transparency enables multimodal approach of neuronal based systems, the electrical layer being compatible with additional microfluidics and optical manipulation ports. The convergence of these fields will provide a next generation of neural interfaces for the reliable detection of single spike and record with high fidelity activity patterns of neural networks. Here, we report on the fabrication of graphene field effect transistors (G-FETs) on various substrates (silicon, sapphire, glass coverslips, and polyimide deposited onto Si/SiO2 substrates), exhibiting high sensitivity (4 mS/V, close to the Dirac point at VLG < VD) and low noise level (10−22 A2/Hz, at VLG = 0 V). We demonstrate the in vitro detection of the spontaneous activity of hippocampal neurons in-situ-grown on top of the graphene sensors during several weeks in a millimeter size PDMS fluidics chamber (8 mm wide). These results provide an advance toward the realization of biocompatible devices for reliable and high spatio-temporal sensing of neuronal activity for both in vitro and in vivo applications.


Nano Letters | 2014

Strain superlattices and macroscale suspension of graphene induced by corrugated substrates.

Antoine Reserbat-Plantey; Dipankar Kalita; Zheng Han; Laurence Ferlazzo; Sandrine Autier-Laurent; Katsuyoshi Komatsu; Chuan Li; Raphaël Weil; Arnaud Ralko; Laëtitia Marty; S. Guéron; Nedjma Bendiab; H. Bouchiat; Vincent Bouchiat


Physical review applied | 2016

Deviation from the normal mode expansion in a coupled graphene-nanomechanical system

Cornelia Schwarz; Benjamin Pigeau; Laure Mercier de Lépinay; Aurélien Kuhn; Dipankar Kalita; Nedjma Bendiab; Laëtitia Marty; Vincent Bouchiat; Olivier Arcizet


arXiv: Mesoscale and Nanoscale Physics | 2017

Sensing ion channels in neuronal networks with graphene transistors

Farida Veliev; Dipankar Kalita; Antoine Bourrier; Tiphaine Belloir; Anne Briançon-Marjollet; Mireille Albrieux; Vincent Bouchiat; Cécile Delacour


arXiv: Materials Science | 2017

High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride

Hadi Arjmandi-Tash; Dipankar Kalita; Zheng Han; Riadh Othmen; Cecile Berne; John Landers; Kenji Watanabe; Takashi Taniguchi; Laëtitia Marty; Johann Coraux; Nedjma Bendiab; Vincent Bouchiat


Archive | 2016

Method of forming a medical device comprising graphene

Dipankar Kalita; Vincent Bouchiat; Laëtitia Marty; Nedjma Bendiab


Journal of Physics: Materials | 2018

Large scale graphene/h-BN heterostructures obtained by direct CVD growth of graphene using high-yield proximity-catalytic process

Hadi Arjmandi-Tash; Dipankar Kalita; Zheng Han; Riadh Othmen; Goutham Nayak; Cecile Berne; John Landers; Kenji Watanabe; Takashi Taniguchi; Laëtitia Marty; Johann Coraux; Nedjma Bendiab; Vincent Bouchiat


2D Materials | 2018

Sensing ion channel in neuron networks with graphene field effect transistors

Farida Veliev; Alessandro Cresti; Dipankar Kalita; Antoine Bourrier; Tiphaine Belloir; Anne Briançon-Marjollet; Mireille Albrieux; Stephan Roche; Vincent Bouchiat; Cécile Delacour

Collaboration


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Vincent Bouchiat

Centre national de la recherche scientifique

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Laëtitia Marty

Centre national de la recherche scientifique

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Nedjma Bendiab

Centre national de la recherche scientifique

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Zheng Han

Chinese Academy of Sciences

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Antoine Reserbat-Plantey

Centre national de la recherche scientifique

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Cécile Delacour

Centre national de la recherche scientifique

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Farida Veliev

Centre national de la recherche scientifique

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Johann Coraux

Centre national de la recherche scientifique

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John Landers

Centre national de la recherche scientifique

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