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Dive into the research topics where Vincent Bouchiat is active.

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Featured researches published by Vincent Bouchiat.


Nature Nanotechnology | 2006

Carbon nanotube superconducting quantum interference device

Jean-Pierre Cleuziou; Wolfgang Wernsdorfer; Vincent Bouchiat; Thierry Ondarçuhu; Marc Monthioux

A superconducting quantum interference device (SQUID) with single-walled carbon nanotube (CNT) Josephson junctions is presented. Quantum confinement in each junction induces a discrete quantum dot (QD) energy level structure, which can be controlled with two lateral electrostatic gates. In addition, a backgate electrode can vary the transparency of the QD barriers, thus permitting change in the hybridization of the QD states with the superconducting contacts. The gates are also used to directly tune the quantum phase interference of the Cooper pairs circulating in the SQUID ring. Optimal modulation of the switching current with magnetic flux is achieved when both QD junctions are in the ‘on’ or ‘off’ state. In particular, the SQUID design establishes that these CNT Josephson junctions can be used as gate-controlled π-junctions; that is, the sign of the current–phase relation across the CNT junctions can be tuned with a gate voltage. The CNT-SQUIDs are sensitive local magnetometers, which are very promising for the study of magnetization reversal of an individual magnetic particle or molecule placed on one of the two CNT Josephson junctions.


Applied Physics Letters | 1996

Lift‐off lithography using an atomic force microscope

Vincent Bouchiat; Daniel Esteve

We present a technique to fabricate nanostructures with an atomic force microscope (AFM). By taking advantage of the AFM tip sharpness, we engrave a narrow furrow in a soft polyimide layer. The furrow is then transferred using dry etching to a thin germanium layer which forms a suspended mask. Metallic layers are then evaporated through this mask. Metallic lines with a 40 nm linewidth and single‐electron transistors have been fabricated. This lift‐off technique can be used on any substrate and allows easy alignment with previously fabricated structures.


Nature Nanotechnology | 2010

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

Georgios Katsaros; Panayotis Spathis; M. Stoffel; F. Fournel; M. Mongillo; Vincent Bouchiat; F. Lefloch; Armando Rastelli; Oliver G. Schmidt; S. De Franceschi

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here, we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductor-semiconductor devices, such as resonant supercurrent transistors, when the quantum dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling with pronounced dependences on gate voltage and magnetic field.


Applied Physics Letters | 2001

Josephson junctions and superconducting quantum interference devices made by local oxidation of niobium ultrathin films

Vincent Bouchiat; Marc Faucher; C. Thirion; Wolfgang Wernsdorfer; T. Fournier; B. Pannetier

We present a method for fabricating Josephson junctions and superconducting quantum interference devices (SQUIDs) which is based on the local anodization of niobium strip lines 3–6.5 nm thick under the voltage-biased tip of an atomic force microscope. Microbridge junctions and SQUID loops are obtained either by partial or total oxidation of the niobium layer. Two types of weak link geometries are fabricated: lateral constriction (Dayem bridges) and variable thickness bridges. SQUIDs based on both geometries show a modulation of the maximum Josephson current with a magnetic flux periodic with respect to the superconducting flux quantum h/2e. They persist up to 4 K. The modulation shape and depth of SQUIDs based on variable thickness bridges indicate that the weak link size becomes comparable to the superconducting film coherence length ξ which is of the order of 10 nm.


Nature Materials | 2012

Electrical control of the superconducting-to- insulating transition in graphene-metal hybrids

Adrien Allain; Zheng Han; Vincent Bouchiat

Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites, based either on covalent or non-covalent coupling of adsorbates, or on stacked and multilayered heterostructures. These systems have shown tunable electronic properties such as bandgap engineering, reversible metal-insulating transition or supramolecular spintronics. Tunable superconductivity is expected as well, but experimental realization is lacking. Here, we show experiments based on metal-graphene hybrid composites, enabling the tunable proximity coupling of an array of superconducting nanoparticles of tin onto a macroscopic graphene sheet. This material allows full electrical control of the superconductivity down to a strongly insulating state at low temperature. The observed gate control of superconductivity results from the combination of a proximity-induced superconductivity generated by the metallic nanoparticle array with the two-dimensional and tunable metallicity of graphene. The resulting hybrid material behaves, as a whole, like a granular superconductor showing universal transition threshold and localization of Cooper pairs in the insulating phase. This experiment sheds light on the emergence of superconductivity in inhomogeneous superconductors, and more generally, it demonstrates the potential of graphene as a versatile building block for the realization of superconducting materials.


Nature Physics | 2009

Superconductivity in a single-C60 transistor

Clemens Winkelmann; Nicolas Roch; Wolfgang Wernsdorfer; Vincent Bouchiat; Franck Balestro

Single-molecule transistors have enabled studies of magnetism and other correlated nanoscale behaviour, but superconductivity has not been observed with this approach. It is now shown that superconducting junctions on both sides of a C60 molecule induce superconductivity across the whole device.


Journal of Vacuum Science & Technology B | 1998

Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope

F. Marchi; Vincent Bouchiat; Hervé Dallaporta; V. Safarov; Didier Tonneau; P. Doppelt

We present an experimental study of growth of silicon oxide strips drawn on hydrogenated silicon under the voltage biased tip of an atomic force microscope operating in ambient atmosphere. Oxide formation was found to occur at negative tip biases above a voltage threshold around |−2|V, corresponding to the minimum electric field required for hydrogen removal from the substrate surface. We show the influence of tip-sample distance and of the chemical composition of the atmosphere on the growth. An ozone enriched atmosphere leads to a growth kinetics enhancement.


Advanced Functional Materials | 2014

Homogeneous Optical and Electronic Properties of Graphene Due to the Suppression of Multilayer Patches During CVD on Copper Foils

Zheng Han; Amina Kimouche; Dipankar Kalita; Adrien Allain; Hadi Arjmandi-Tash; Antoine Reserbat-Plantey; Laëtitia Marty; Sébastien Pairis; Valérie Reita; Nedjma Bendiab; Johann Coraux; Vincent Bouchiat

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.


Nature Nanotechnology | 2012

A local optical probe for measuring motion and stress in a nanoelectromechanical system

Antoine Reserbat-Plantey; Laëtitia Marty; Olivier Arcizet; Nedjma Bendiab; Vincent Bouchiat

Nanoelectromechanical systems can be operated as ultrasensitive mass sensors and ultrahigh-frequency resonators, and can also be used to explore fundamental physical phenomena such as nonlinear damping and quantum effects in macroscopic objects. Various dissipation mechanisms are known to limit the mechanical quality factors of nanoelectromechanical systems and to induce aging due to material degradation, so there is a need for methods that can probe the motion of these systems, and the stresses within them, at the nanoscale. Here, we report a non-invasive local optical probe for the quantitative measurement of motion and stress within a nanoelectromechanical system, based on Fizeau interferometry and Raman spectroscopy. The system consists of a multilayer graphene resonator that is clamped to a gold film on an oxidized silicon surface. The resonator and the surface both act as mirrors and therefore define an optical cavity. Fizeau interferometry provides a calibrated measurement of the motion of the resonator, while Raman spectroscopy can probe the strain within the system and allows a purely spectral detection of mechanical resonance at the nanoscale.Nanoelectromechanical systems (NEMSs) are emerging nanoscale elements at the crossroads between mechanics, optics and electronics, with significant potential for actuation and sensing applications. The reduction of dimensions compared to their micronic counterparts brings new effects including sensitivity to very low mass, resonant frequencies in the radiofrequency range, mechanical non-linearities and observation of quantum mechanical effects. An important issue of NEMS is the understanding of fundamental physical properties conditioning dissipation mechanisms, known to limit mechanical quality factors and to induce aging due to material degradation. There is a need for detection methods tailored for these systems which allow probing motion and stress at the nanometer scale. Here, we show a non-invasive local optical probe for the quantitative measurement of motion and stress within a multilayer graphene NEMS provided by a combination of Fizeau interferences, Raman spectroscopy and electrostatically actuated mirror. Interferometry provides a calibrated measurement of the motion, resulting from an actuation ranging from a quasi-static load up to the mechanical resonance while Raman spectroscopy allows a purely spectral detection of mechanical resonance at the nanoscale. Such spectroscopic detection reveals the coupling between a strained nano-resonator and the energy of an inelastically scattered photon, and thus offers a new approach for optomechanics.


Physical Review Letters | 2010

Tunable Superconducting Phase Transition in Metal-Decorated Graphene Sheets

Brian Kessler; Caglar Girit; Alex Zettl; Vincent Bouchiat

We have produced graphene sheets decorated with a nonpercolating network of nanoscale tin clusters. These metal clusters both efficiently dope the graphene substrate and induce long-range superconducting correlations. We find that despite structural inhomogeneity on mesoscopic length scales (10-100 nm), this material behaves electronically as a homogenous dirty superconductor with a field-effect tuned Berezinskii-Kosterlitz-Thouless transition. Our facile self-assembly method establishes graphene as an ideal tunable substrate for studying induced two-dimensional electronic systems at fixed disorder and our technique can readily be extended to other order parameters such as magnetism.

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Laëtitia Marty

Centre national de la recherche scientifique

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Nedjma Bendiab

Centre national de la recherche scientifique

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Zheng Han

Chinese Academy of Sciences

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Wolfgang Wernsdorfer

Centre national de la recherche scientifique

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A.M. Bonnot

Centre national de la recherche scientifique

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Cécile Delacour

Centre national de la recherche scientifique

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Dipankar Kalita

Centre national de la recherche scientifique

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Johann Coraux

Centre national de la recherche scientifique

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Marc Faucher

Centre national de la recherche scientifique

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T. Fournier

Centre national de la recherche scientifique

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