Dongseok Suh

Reproducible resistance switching in polycrystalline NiO films

Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods. Oxygen to argon gas ratio during deposition was critical in deciding the detailed switching characteristics of either bi-stable memory switching or mono-stable threshold switching. Both metallic nickel defects and nickel vacancies influenced the negative resistance and the switching characteristics. We obtained a distribution of low resistance values which were dependent on the compliance current of high-to-low resistance switching. At 200°C, the low-resistance state kept its initial resistance value while the high-resistance state reached 85% of its initial resistance value after 5×105s. We suggested that the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small-polaron hole hopping conduction.

Electrical observations of filamentary conductions for the resistive memory switching in NiO films

Experimental results on the bistable resistive memory switching in submicron sized NiO memory cells are presented. By using a current-bias method, intermediate resistance states and anomalous resistance fluctuations between resistance states are observed during the resistive transition from high resistance state to low resistance state. They are interpreted to be associated with filamentary conducting paths with their formation and rupture for the memory switching origin in NiO. The experimental results are discussed on the basis of filamentary conductions in consideration of local Joule heating effect.

Electrically, Chemically, and Photonically Powered Torsional and Tensile Actuation of Hybrid Carbon Nanotube Yarn Muscles

Nanotube Yarn Actuators Actuators are used to convert heat, light, or electricity into a twisting or tensile motion, and are often described as artificial muscles. Most materials that show actuation either provide larger forces with small-amplitude motions, such as the alloy NiTi, or provide larger motions with much less force, such as polymeric materials. Other problems with such actuators can include slow response times and short lifetimes. Lima et al. (p. 928, see the Perspective by Schulz) show that a range of guest-filled, twist-spun carbon nanotube yarns can be used for linear or torsional actuation, can solve the problems of speed and lifetime, and do not require electrolytes for operation. Thermally driven actuators use a guest material within carbon nanotube yarns to generate fast torsional and tensile motions. Artificial muscles are of practical interest, but few types have been commercially exploited. Typical problems include slow response, low strain and force generation, short cycle life, use of electrolytes, and low energy efficiency. We have designed guest-filled, twist-spun carbon nanotube yarns as electrolyte-free muscles that provide fast, high-force, large-stroke torsional and tensile actuation. More than a million torsional and tensile actuation cycles are demonstrated, wherein a muscle spins a rotor at an average 11,500 revolutions/minute or delivers 3% tensile contraction at 1200 cycles/minute. Electrical, chemical, or photonic excitation of hybrid yarns changes guest dimensions and generates torsional rotation and contraction of the yarn host. Demonstrations include torsional motors, contractile muscles, and sensors that capture the energy of the sensing process to mechanically actuate.

Conductivity switching characteristics and reset currents in NiO films

Conductivity switching phenomena controlled by external voltages have been investigated for various NiO films deposited by dc reactive sputtering methods. Pt∕NiO∕Pt capacitor structures with top electrodes of different diameters have showed increasing off-state current with the diameter of a top electrode and nearly the same on-state current independent of the diameter. Local conductivity switching behaviors have been observed in a series structure consisting of two Pt∕NiO∕Pt capacitors with different resistance values. By reasoning out conductivity switching mechanisms from the switching characteristics and introducing multilayers consisting of NiO layers with different resistance values, we have reduced the reset current by two orders of magnitude.

All-Solid-State Carbon Nanotube Torsional and Tensile Artificial Muscles

We report electrochemically powered, all-solid-state torsional and tensile artificial yarn muscles using a spinnable carbon nanotube (CNT) sheet that provides attractive performance. Large torsional muscle stroke (53°/mm) with minor hysteresis loop was obtained for a low applied voltage (5 V) without the use of a relatively complex three-electrode electromechanical setup, liquid electrolyte, or packaging. Useful tensile muscle strokes were obtained (1.3% at 2.5 V and 0.52% at 1 V) when lifting loads that are ∼25 times heavier than can be lifted by the same diameter human skeletal muscle. Also, the tensile actuator maintained its contraction following charging and subsequent disconnection from the power supply because of its own supercapacitor property at the same time. Possible eventual applications for the individual tensile and torsional muscles are in micromechanical devices, such as for controlling valves and stirring liquids in microfluidic circuits, and in medical catheters.

Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices

We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.

Optical properties of (GeTe, Sb2Te3) pseudobinary thin films studied with spectroscopic ellipsometry

The authors measure the dielectric functions of (GeTe, Sb2Te3) pseudobinary thin films by using spectroscopic ellipsometry. By using standard critical point model, they obtained the optical transition (critical point) energies of the amorphous (crystalline) thin films. The optical (indirect band) gap energies of the amorphous (crystalline) phase are estimated from the linear extrapolation of the absorption coefficients. The band structure calculations show that GeTe, Ge2Sb2Te5, and Ge1Sb2Te4 have indirect gap whereas Ge1Sb4Te7 and Sb2Te3 have direct gap. The measured indirect band gap energies match well with electronic band structure calculations.

Giant and Stable Conductivity Switching Behaviors in ZrO2 Films Deposited by Pulsed Laser Depositions

ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 and switching endurance of 105 times are observed in a typical Pt/ZrO2/Pt structure. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4 V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4 V< V <8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

Electrical characteristics of Ge2Sb2Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon et al., J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.