Doo-Hwan Park

Methods of manufacturing phase-change memory devices

Method of Forming Semiconductor Device Having Self-Aligned Plug

Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same

Chalcogenide Compound Target, Method of Forming the Chalcogenide Compound Target and Method for Manufacturing a Phase-Change Memory Device

Phase-Change Material Layer and Phase-Change Memory Device Including the Phase-Change Material Layer

Phase change structure, and phase change memory device

Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the Same

Methods for manufacturing a phase-change memory device

MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME

Phase-change memory units, methods of forming the phase-change memory units, phase-change memory devices having the phase-change memory units and methods of manufacturung the phase-change memory devices