Jeong-hee Park

Phase changeable memory devices

Phase changeable memory devices and methods for fabricating the same

Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same

Methods for fabricating phase changeable memory devices

Phase-Changeable Memory Devices Including Nitrogen and/or Silicon Dopants

Phase changeable memory devices including nitrogen and/or silicon

Multi-layer phase-changeable memory devices

Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same

Variable resistance memory device and method of forming the same

Phase change memory device, storage system having the same and fabricating method thereof