Douglas E. Houston

“GAMBIT: GAte Modulated BIpolar Transistor”

Abstract A planar, interdigitated, integrated device structure is described whose characteristics show a voltage controlled negative resistance between two of its terminals. This negative resistance can be controlled by the applied bias to a third terminal. Devices have been fabricated with this structure to achieve negative resistance values ranging from a few hundred thousand ohms down to less than a hundred ohms. The physical mechanisms that give rise to this negative resistance are described and a dc analysis of its behavior is presented. The analysis shows excellent agreement with the observed device characteristics.