Du-Yeul Kim

New approach to isotropic texturing techniques on multicrystalline silicon wafers

AbstractMulticrystalline silicon wafers were isotropically textured using two kinds of modified acid texturing methods. One of the modifications is based on the introduction of the spray deposition method into the conventional acid etching of Si wafers. Silicon dioxide or photo-resist was sprayed on the Si wafers and used as masks for following acid etching process. The acid etching solution was modified with

SIGNAL AMPLIFICATION CIRCUIT FOR HIGH-SPEED OPERATION AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME

H_2 SO_4

Circuits and methods for controlling timing skew in semiconductor memory devices

and various additives. Short circuit densities of the solar cells fabricated using those modified acid texturing were measured to be in the range between 30.8 and

Semiconductor memory device with small number of repair signal transmission lines

31.4mA/cm^2

SEMICONDUCTOR DEVICE HAVING INTERCONNECTION IN PACKAGE AND METHOD FOR MANUFACTURING THE SAME

, which were at least