E. G. Zamburg

Electrical and optical properties of zinc-oxide films deposited by the ion-beam sputtering of an oxide target

The influence of the parameters of the deposition process on the stoichiometric composition and electrical and optical properties of ZnO films deposited by the ion-beam sputtering of a ZnO target is studied. It is established that, upon sputtering of a ZnO target with stoichiometric composition, there is a deficit of oxygen in the films deposited. Even for the case of target sputtering in a pure O2 atmosphere, the stoichiometry index of the films is no higher than 0.98. A decrease in the oxygen content in the films is accompanied by a sharp decrease in the resistivity to 35–40 Ω m, narrowing of the optical band gap, and a shift of the optical transmittance edge from 389 to 404 nm. All of the variations in the optical and electrical properties of the ZnO films can be attributed to variations in the concentration and mobility of free charge carriers in the films.

Development of New Metamaterials for Advanced Element Base of Micro- and Nanoelectronics, and Microsystem Devices

The results of experimental researches of the geometrical parameters of vertically aligned carbon nanotubes (VACNTs) are present by atomic force microscopy. The analysis of the applicability of the different AFM modes to determine the geometrical parameters of VACNTs array was carried out and based on this analysis the rapid-technique for determination of the length of the nanotubes in VACNTs array was developed. Unified two-layer polysilicon surface micromachining process for manufacture of biaxial micromechanical gyroscope , triaxial micromechanical accelerometer and biaxial nanomechanical accelerometer was proposed. Polysilicon inertial masses were fabricated by optical lithography, dry etching under different masks and wet etching of sacrificial layer. We developed AFM-technique for determination of electrical parameters GaAs nanowires (NWs) , which does not require additional operations of NW fixation and allows one to estimate the resistivity and conductivity type of NW material. The obtained results can use to develop of the nanodiagnostic methods and the processes of formation of micro- and nanoelectronic elements based.

Effect of the processes in the laser ablation plume on the resistivity and morphology of nanocrystalline ZnO films

The specific features of the formation of nanocrystalline ZnO films by pulsed laser deposition have been studied at different target–substrate distances. Expressions for estimating the temperature, particle concentration, and pressure in the laser ablation plume have been obtained. The effect of these parameters on electrical properties of nanocrystalline ZnO films grown by pulsed laser deposition has been estimated. The feasibility of the controlled growth of nanocrystalline ZnO films with a surface roughness of ~2–15 nm, grain diameters of 70–620 nm, and resistivities in the range of (1.75–5.3) × 10–3 Ω cm has been demonstrated.

Nanocrystalline ZnO films grown by PLD for NO 2 and NH 3 sensor

Nanocrystalline ZnO thin films were grown by pulsed laser deposition technique on polycor substrates. The operation laser fluence of 2.0 J·cm-2 and film thickness of 60 nm were fixed while varying target-to-substrate distance (20-135 mm), substrate temperature (100-500 °C) and annealing temperature (300-700 °C). Structural and morphological investigations carried out by reflection high-energy electron diffraction, scanning electron and atomic force microcopies, have shown a strong influence of deposition technique parameters on grain size of the zinc oxide films. Atomic force microscopy showed the surface roughness decreasing and grain size increasing with the annealing treatment of the as-deposited films. The resistivity and Hall mobility of ZnO films were increased with substrate temperature and/or annealing temperature rise. The gas sensing characteristics of the films were investigated towards nitrogen dioxide and ammonia at a selected operating temperature (22 and 50 °C).

Mathematical Model of the Influence of Chemisorption Process on Electrophysical Parameters of Nanosized ZnO Films

We have developed a mathematical model of electrophysical and gas sensitive properties of nanosized ZnO film during chemisorption of gas molecules of CO, CO2, CH4, and NO2 on its surface and figured out regularities of influence of thickness of depletion layer of nanosized ZnO films on their electric and gas sensitivity properties. We have determined optimal range of working temperatures and thicknesses of nanosized ZnO films for detecting CO, CO2 CH4, and NO2 with maximum gas sensitivity and selectivity and theoretical investigated gas-sensitivity properties of nanosized ZnO films.

Tribological behavior of TiN films depositid by reactive magnetron sputtering under low pressure

The effect of deposition conditions on the tribological behavior of titanium nitride thin films produced by reactive magnetron sputtering has been studied. Dependences of the hardness, the width of the friction track, the friction coefficient, and the volume wear of the TiN films on the N2 reactive gas flow rate have been obtained. Conditions of deposition under which the coatings with the best tribological characteristics are formed have been determined.

Formation of elements of integrated acousto-optic cell based on LiNbO3 films by methods of nanotechnology

In the experiments we defined modes, and developed the technology of formation of elements of input-output laser emission and microlens of integrated acousto-optic cell by Pulsed Laser Deposition and Focused Ion Beams by using nanotechnology cluster complex, allowing controlled creation of elements in a single process cycle.

Formation of High Aspect Ratio Nanostructures Using Focused Ion Beam Induced Deposition of Carbon

This paper presents results of the formation of high aspect nanostructures by local deposition of carbon, stimulated by focused ion beam (FIB). The structures used in the modification of the probe sensors were cantilevers for atomic force microscopy (AFM). The FIB structure of 5 mm length and 50 mm radius of curvature formed on the surface of the cantilever tip has shown to improve the accuracy of measurement by AFM. The outcome of this study is useful for the development of manufacturing processes and modification of the probe sensor-cantilever AFM structures of field-electron emitters as well as in the studies of micro- and nanosystems technology.

Study of the effect of ion-stimulated deposition assisted by a pulsed laser on the properties of zinc oxide nanocrystalline films

Nanocrystalline thin films of ZnO have been fabricated using the pulsed laser deposition method. The influence of the ion/atom ratio on the structural, morphological, and electrical parameters of these films is considered. It is established that, in the case of ion action on thin films, their crystalline structure and electrophysical properties are significantly changed. It is demonstrated that modes of ion-assisted deposition can help to control the average grain size in the range from 75.4 ± 2.0 nm to 79.1 ± 2.0 nm, the roughness in the range from 2.14 ± 1.11 nm to 7.30 ± 1.25 nm, and the resistivity and mobility in the range from (22.6 ± 2) × 10−4 Ohm cm to (33.6 ± 2) × 10−4 Ohm cm and from 28.21 ± 4.60 cm2/V s to 71.92 ± 2.50 cm2/V s, respectively.

Research of Influence Thickness of Nanocrystalline VOx Films on their Electrical Properties

Nanocrystalline VOx thin films were manufactured by using pulsed laser deposition. The influence of deposition time on electrical parameters of VOx thin films were researched. It was determined that changes in deposition time lead to significant changes in properties of thin films, including resistivity in the range from 5 Ohm·cm to 70 Ohm·cm. The possibility of controlling physical properties of VOx nanocrystalline films obtained in the experiments has been shown.