E. H. Bernhardi

Ultra-narrow-linewidth, single-frequency distributed feedback waveguide laser in Al2O3:Er3+ on silicon.

We report the realization and performance of a distributed feedback channel waveguide laser in erbium-doped aluminum oxide on a standard thermally oxidized silicon substrate. The diode-pumped continuous-wave laser demonstrated a threshold of 2.2 mW absorbed pump power and a maximum output power of more than 3 mW with a slope efficiency of 41.3% versus absorbed pump power. Single-longitudinal-mode and single-polarization operation was achieved with an emission linewidth of 1.70+/-0.58 kHz (corresponding to a Q factor of 1.14 x 10(11)), which was centered at a wavelength of 1545.2 nm.

Photonic generation of stable microwave signals from a dual-wavelength

We report the fabrication and characterization of a dual-wavelength distributed-feedback channel waveguide laser in ytterbium-doped aluminum oxide. Operation of the device is based on the optical resonances that are induced by two local phase shifts in the distributed-feedback structure. A stable microwave signal at ~15 GHz with a -3 dB width of 9 kHz was subsequently created via the heterodyne photodetection of the two laser wavelengths. The long-term frequency stability of the microwave signal produced by the free-running laser is better than ±2.5 MHz, while the power of the microwave signal is stable within ±0.35 dB.

Al_2O_3:Yb^{3+}

We report the fabrication and performance of a highly efficient, monolithic distributed-Bragg-reflector channel waveguide laser in ytterbium-doped aluminum oxide. The 1 cm long device was fabricated on a standard thermally oxidized silicon substrate and was optically pumped with a 976 nm laser diode. Single-longitudinal-mode and single-polarization operation was achieved at a wavelength of 1021.2 nm. Continuous-wave output powers of up to 47 mW and a launched pump power threshold of 10 mW resulted in a slope efficiency of 67%.

distributed-feedback waveguide laser

Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

Highly efficient, low-threshold monolithic distributed-Bragg-reflector channel waveguide laser in Al

Measurement of the laser relaxation-oscillation frequency as a function of pump rate allows one to determine parameters of the laser medium or cavity. We show that luminescence quenching of a fraction of the rare-earth ions in a solid-state laser affects the relaxation oscillations, resulting in incorrect values for the parameter deduced from this measurement. In the equations describing the relaxation oscillations, we replace the lifetime of the upper laser level by an effective lifetime that takes the luminescence quenching into account. In an Al2O3:Yb3+ distributed-feedback laser we observe significant quenching, with the effective lifetime being ~18 times shorter than the intrinsic upper-laser-level lifetime.

_{2}

Channel waveguide lasers operating at 981 nm are demonstrated in KY(1-x-y)Gd(x)Lu(y)(WO4)2:Yb3+ waveguides grown by liquid phase epitaxy onto undoped KY(WO4)2 substrates and microstructured by Ar+ beam etching. Under pumping at 934 nm of samples with different waveguide geometry and outcoupling degree, a record-high slope efficiency of 76% versus absorbed pump power and a record-high output power of 650 mW for rare-earth-ion-doped microstructured channel waveguide lasers is achieved. The laser performance is compared to that of the same devices when pumping at 981 nm and lasing near 1025 nm.

O

We demonstrate the photonic generation of microwave signals by using a dual-frequency distributed feedback waveguide laser in ytterbium-doped aluminum oxide (Al2O3:Yb3+). An optical frequency locked loop (OFLL) was implemented to stabilize the center frequency of the microwave signal. This approach resulted in a microwave frequency at ~14 GHz with a phase noise of -75 dBc/Hz at 1 MHz offset from the center frequency. The frequency stability of the photonic microwave signal has an Allan deviation of more than 1 × 10-10 for an averaging time of 1000 s. The combination of the dual-frequency laser and the OFLL scheme holds great potential for the photonic generation and distribution of highly stable microwave or millimeter-wave signals.

_{3}

We characterize the spectral response of a distributed-feedback resonator when subject to a thermal chirp. An Al2O3 rib waveguide with a corrugated surface Bragg grating inscribed into its SiO2 top cladding is experimentally investigated. We induce a near-to-linear temperature gradient along the resonator, leading to a similar variation of the grating period, and characterize its spectral response in terms of wavelength and linewidth of the resonance peak. Simulations are carried out, showing good agreement with the experimental results and indicating that the wavelength of the resonance peak is a result only of the total accumulated phase shift. For any chirp profile we are able to calculate the reflectivities at the resonance wavelength, and this information largely explains how the linewidth of the resonance changes. This result shows that the increase in linewidth is governed by the increase of the resonator outcoupling losses.

:Yb

We demonstrate the optical generation of stable microwave signals from a dual-wavelength distributed-feedback waveguide laser in ytterbium-doped alumina. The microwave beat signal was produced at ~15 GHz with a frequency stability of ±2.5 MHz.

^{3+}

150 dB/cm gain over 55 nm wavelength range between 977-1032 nm is obtained in a 47.5% Yb-doped potassium double tungstate waveguide amplifier. The dependence of luminescence lifetime and gain on Yb concentration is investigated.